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Patrick DesjardinsNon applicable
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Allard, C., Desjardins, P., Gaufrès, E., & Martel, R. (2022). (Invited) Kinetics and Thermodynamics of Swcnts and Bnnts Encapsulation with α-Sexithiophene in Liquid Phase. Meeting abstracts, MA2022-01(9), 726-726. Lien externe
Allard, C., Gaufres, E., Desjardins, P., & Martel, R. (2021). The Kinetics of Dye Encapsulation in Single-Walled Carbon Nanotubes Probed By Statistical Raman Imaging. ECS Meeting Abstracts, MA2021-01(11), 572-572. Lien externe
Allard, C., Gaufrès, E., Desjardins, P., & Martel, R. (2020). Raman Imaging Study of Alpha-Sexithiophene Encapsulation in Single-Walled Carbon Nanotubes. Meeting abstracts, MA2020-01(7), 677-677. Lien externe
Allard, C., Schu, L., Fossard, F., Recher, G., Nascimento, R., Flahaut, E., Loiseau, A., Desjardins, P., Martel, R., & Gaufres, E. (2020). Confinement of Dyes inside Boron Nitride Nanotubes: Photostable and Shifted Fluorescence down to the Near Infrared. Advanced Materials, 32(29), 2001429 (10 pages). Lien externe
Anahory, Y., Guihard, M., Smeets, D., Karmouch, R., Schiettekatte, F., Vasseur, P., Desjardins, P., Hu, L. A., Allen, L. H., Leon-Gutierrez, E., & Rodriguez-Viejo, J. (2010). Fabrication, Characterization and Modeling of Single-Crystal Thin Film Calorimeter Sensors. Thermochimica Acta, 510(1-2), 126-136. Lien externe
Aguirre, C. M., Ternon, C., Paillet, M., Desjardins, P., & Martel, R. (2009). Carbon nanotubes as injection electrodes for organic thin film transistors. Nano Letters, 9(4), 1457-1461. Lien externe
Aguirre, C. M., Levesque, P. L., Paillet, M., Lapointe, F., St-Antoine, B. C., Desjardins, P., & Martel, R. (2009). The role of the oxygen/water redox couple in suppressing electron conduction in field-effect transistors. Advanced Materials, 21(30), 3087-3091. Lien externe
Adam, E., Aguirre, C. M., Marty, L., St-Antoine, B. C., Meunier, F., Desjardins, P., Ménard, D., & Martel, R. (2008). Electroluminescence From Single-Wall Carbon Nanotube Network Transistors. Nano Letters, 8(8), 2351-2355. Lien externe
Arsenault, L. F., Movaghar, B., Desjardins, P., & Yelon, A. (2008). Magnetotransport in the Insulating Regime of Mn-Doped Gaas. Physical Review. B, Condensed Matter and Materials Physics, 78(7), 075202-1 - 075202-12-075202-1 - 075202-12. Lien externe
Arsenault, L.-F., Movaghar, B., Desjardins, P., & Yelon, A. (2008). Transport in the metallic regime of Mn-doped III-V semiconductors. Physical Review. B, Condensed Matter and Materials Physics, 77(11), 115211-1. Lien externe
Aguirre, C. M., Auvray, S., Pigeon, S., Izquierdo, R., Desjardins, P., & Martel, R. (2006). Carbon nanotube sheets as electrodes in organic light-emitting diodes. Applied Physics Letters, 88(18), 183104-1-183104-3. Lien externe
Amassian, A., Svec, M., Desjardins, P., & Martinu, L. (2006). Dynamics of ion bombardment-induced modifications of Si(001) at the radio-frequency-biased electrode in low-pressure oxygen plasmas: in situ spectroscopic ellipsometry and Monte Carlo study. Journal of Applied Physics, 100(6), 063526. Lien externe
Amassian, A., Svec, M., Desjardins, P., & Martinu, L. (2006). Interface broadening due to ion mixing during thin film growth at the radio-frequency-biased electrode in a plasma-enhanced chemical vapor deposition environment. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 24(6), 2061-2069. Lien externe
Amassian, A., Desjardins, P., & Martinu, L. (2006). Ion-surface interactions on c-Si(001) at the radiofrequency-powered electrode in low-pressure plasmas: ex situ spectroscopic ellipsometry and Monte Carlo simulation study. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 24(1), 45-54. Lien externe
Amassian, A., Desjardins, P., & Martinu, L. (juin 2004). Dynamics of surface modifications during optical coating deposition in plasma-assisted processes [Communication écrite]. Optical Interference Coatings, Washington, DC, USA. Lien externe
Amassian, A., Verhnes, R., Sapieha, J.-E., Desjardins, P., & Martinu, L. (2004). Interface engineering during plasma-enhances chemical vapor deposition of porous/dense SiN1.3 optical multilayers. Thin Solid Films, 469-470, 47-53. Lien externe
Amassian, A., Vernhes, R., Sapieha, J.-E., Desjardins, P., & Martinu, L. (janvier 2004). Interface engineering of porous/dense multilayers of SiN1.3: in situ real-time spectroscopic ellipsometry study [Communication écrite]. 47th Society of Vacuum Coaters Technical Conference. Lien externe
Amassian, A., Vernhes, R., Sapieha, J.-E., Desjardins, P., & Martinu, L. (juin 2004). Study of the growth and interface engineering of dense/porous SiNx optical coatings by real-time spectroscopic ellipsometry [Communication écrite]. Optical Interference Coatings, Washington, DC, USA. Lien externe
Amassian, A., Desjardins, P., & Martinu, L. (2004). Study of TiO₂ film growth mechanisms in low-pressure plasma by in situ real-time spectroscopic ellipsometry. Thin Solid Films, 447-448(3), 40-45. Lien externe
Amassian, A., Larouche, S., Vernhes, R., Sapieha, J.-E., Desjardins, P., & Martinu, L. (mai 2002). Analysis and control of optical film growth by in situ real-time spectroscopic ellipsometry [Communication écrite]. SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging (Opto Canada 2002), Ottawa, Ont., Can.. Lien externe
Amassian, A., Larouche, S., Sapieha, J.-E., Desjardins, P., & Martinu, L. (avril 2002). In situ ellipsometric study of the initial growth stages of a TiO₂ by PECVD [Communication écrite]. 45th Annual Technical Conference of the Society of Vacuum Coaters, Lake Buena Vista, FL, USA. Lien externe
Ababou, Y., Desjardins, P., Chennouf, A., Masut, R. A., Yelon, A., Beaudoin, M., Bensaada, A., Leonelli, R., & L'Espérance, G. (1997). Optical absorption and determination of band offset in strain-balanced GaInP/InAsP multiple quantum wells grown by low-pressure metalorganic vapor phase epitaxy. Semiconductor Science and Technology, 12(5), 550-554. Lien externe
Ababou, Y., Desjardins, P., Masut, R. A., Yelon, A., & L'Espérance, G. (1996). Metalorganic vapor phase epitaxy and structural characterization of InP on Si(111). Canadian Journal of Physics, 74(1), S108-S111. Lien externe
Abadou, Y., Desjardins, P., Chennouf, A., Leonelli, R., Hetheringtin, A., Yelon, A., L'Espérance, G., & Masut, R. A. (1996). Structural and optical charact. of InP grown on Si(111) by metalorganic vapor phase epitaxy using thermal cycle growth. Journal of Applied Physics, 80(9), 499-505. Lien externe
Ababou, Y., Desjardins, P., Chennouf, A., Masut, R. A., Yelon, A., Leonelli, R., & L'Espérance, G. (juin 1995). Growth of strain-balanced GaInP/InAsP MQW by LP-MOVPE [Communication écrite]. 6th European workshop on Metal-Organic Vapour Phase Epitaxy and related techniques, Gent, Belgique. Non disponible
Beausoleil, A., Desjardins, P., & Rochefort, A. (2014). Impact of nucleation on step-meandering instabilities during step-flow growth on vicinal surfaces. Physical Review E, 89(3). Lien externe
Bratland, K. A., Spila, T., Cahill, D. G., Greene, J. E., & Desjardins, P. (2011). Continuum model of surface roughening and epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy. Journal of Applied Physics, 109(6). Lien externe
Beaudry, C., Boyer, P., Camarero, R., Chaouki, J., Comeau, Y., Dansereau, J., Desjardins, P., Dupuis, C., Hurteau, R., Nicolas, J., & Pierre, S. (2010). Vers la création d'un microprogramme de 3e cycle visant l'enrichissement des habiletés des doctorats. (Rapport technique). Non disponible
Beausoleil, A., Desjardins, P., & Rochefort, A. (2008). Effects of Long Jumps, Reversible Aggregation, and Meyer-Neldel Rule on Submonolayer Epitaxial Growth. Physical Review E :Statistical, nonlinear, and soft matter physics, 78(2), 021604-021604. Lien externe
Beaudry, J.-N., Masut, R. A., & Desjardins, P. (2008). GaAs₁₋ₓNₓ on GaAs(001): Nitrogen Incorporation Kinetics From Trimethylgallium, Tertiarybutylarsine, and 1,1-Dimethylhydrazine Organometallic Vapor-Phase Epitaxy. Journal of Crystal Growth, 310(6), 1040-1048. Lien externe
Bentoumi, G., Yaïche, Z., Leonelli, R., Beaudry, J. N., Desjardins, P., & Masut, R. A. (2008). Low-Temperature Emission in Dilute GaAsN Alloys Grown by Metalorganic Vapor Phase Epitaxy. Journal of Applied Physics, 103(6), 063526-1-063526-5. Lien externe
Beaudry, J.-N., Shtinkov, N., Masut, R. A., Desjardins, P., & Jiménez Riobóo, R. J. (2007). Compositional dependence of the elastic constants of dilute GaAs₁₋ₓNₓ alloys. Journal of Applied Physics, 101(11), 113507-1. Lien externe
Bergeron, D., Shtinkov, N., Masut, R. A., & Desjardins, P. (2005). Green's function matching method for one- and zero-dimensional heterostructures. Physical Review. B, Condensed Matter and Materials Physics, 72(24), 245308. Lien externe
Bentoumi, G., Timoshevskii, V., Madini, N., Côté, M., Leonelli, R., Beaudry, J. N., Desjardins, P., & Masut, R. A. (2004). Evidence for large configuration-induced band-gap fluctuations in GaAs₁₋ₓNₓ alloys. Physical Review. B, Condensed Matter and Materials Physics, 70(3), 35315.1-35315.5. Lien externe
Beaudry, J.-N., Masut, R. A., Desjardins, P., Wei, P., Chicoine, M., Bentoumi, G., Leonelli, R., Schiettekatte, F., & Guillon, S. (2004). Organometallic vapor phase epitaxy of GaAs₁₋ₓNₓ alloy layers on GaAs(001): Nitrogen incorporation and lattice parameter variation. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(3), 771-775. Lien externe
Bratland, K. A., Foo, Y. L., Soares, J., Spila, T., Desjardins, P., & Greene, J. E. (2003). Mechanism for Epitaxial Breakdown During Low-Temperature Ge(001) Molecular Beam Epitaxy. Physical Review. B, Condensed Matter and Materials Physics, 67(12), 125322-125322. Lien externe
Bratland, K. A., Foo, Y. L., Desjardins, P., & Greene, J. E. (2003). Sn-enhanced epitaxial thickness during low-temperature Ge(001) molecular beam epitaxy. Applied Physics Letters, 82(24), 4247-4247. Lien externe
Beaudoin, M., Desjardins, P., Yip, R. Y.-F., & Masut, R. A. (2000). Optical and structural properties of InAsP/In(Ga)P multilayers on InP(001): Strained-layer multiple quantum well structures and devices. Dans Manasreh, M. O. (édit.), InP and related compounds : materials, applications and devices . Lien externe
Beaudoin, M., Desjardins, P., Aït-Ouali, A., Brebner, J. L., Yip, R. Y. F., Marchand, H., Isnard, L., & Masut, R. A. (2000). Optical properties and heterojunction band alignment in fully coherent strain-compensated InAsₓP₁₋ₓ /GayIn₁₋yP multilayers on InP(001). Journal of Applied Physics, 87(5), 2320-2326. Lien externe
Beaudoin, M., Bensaada, A., Leonelli, R., Desjardins, P., Masut, R. A., Isnard, L., Chennouf, A., & L'Espérance, G. (1996). Self-consistent determination of the band offsets in InAsₓP₁₋ₓ/InP strained layer quantum wells and the bowing parameter of bulk InAsₓP₁₋ₓ. Physical review. B, Condensed matter, 53(4), 1990-1996. Lien externe
Beaudoin, M., Masut, R. A., Isnard, L., Desjardins, P., Bensaada, A., L'Espérance, G., & Leonelli, R. (novembre 1994). Band offsets of InAsxP₁₋x/InP strained layer quantum wells grown by LP-MOVPE using TBAs [Communication écrite]. Microcrystalline and nanocrystalline semiconductors : Symposium F of the 1994 Fall Meeting of the Materials Research Society, Boston, USA. Lien externe
Bensaada, A., Suys, M., Beaudoin, M., Desjardins, P., Isnard, L., Masut, R. A., Cochrane, R. W., Currie, J. F., & L'Espérance, G. (juin 1995). LP-MOVPE growth and characterization of InₓGa₁₋ₓAs/InP epilayers and multiple quantum wells using tertiarybutylarsine [Communication écrite]. 6th European Workshop on Metal-Organic Vapour Phase Epitaxy and related growth techniques, Ghent, Belgium. Non disponible
Charpin, C.-B., Cardinal, D., Choubak, S., Levesque, P. L., Desjardins, P., & Martel, R. (octobre 2016). Graphene Growth Kinetics Under Purified Conditions [Communication écrite]. Graphene & 2D Materials International Conference and Exhibition (Graphene Canada 2016), Montréal, Québec. Non disponible
Choubak, S., Lévesque, P., Gagnon, P., Martel, R., & Desjardins, P. (2016). Method of growing a graphene coating or carbon nanotubes on a catalytic substrate. (Demande de brevet no US20160376156). Lien externe
Choubak, S., Lévesque, P. L., Gaufrès, É., Biron, M., Desjardins, P., & Martel, R. (2014). Graphene CVD: Interplay Between Growth and Etching on Morphology and Stacking by Hydrogen and Oxidizing Impurities. Journal of Physical Chemistry C, 118(37), 21532-21540. Lien externe
Choubak, S., Biron, M., Levesque, P. L., Martel, R., & Desjardins, P. (2013). No graphene etching in purified hydrogen. Journal of Physical Chemistry Letters, 4(7), 1100-1103. Lien externe
Chicoine, M., Beaudoin, C., Roorda, S., Masut, R. A., & Desjardins, P. (2005). III-V Compliant Substrates Implemented by Nanocavities Introduced by Ion Implantation. Journal of Applied Physics, 97(6). Lien externe
Coia, C., Lavoie, C., D'Heurle, F. M., Detavernier, C., Desjardins, P., & Kellock, A. J. (mai 2005). Reactive diffusion in the Ni-Si system: Influence of Ni thickness on the phase formation sequence [Communication écrite]. 207th Meeting of the Electrochemical Society, Québec, Canada. Lien externe
Chicoine, M., Roorda, S., Masut, R. A., & Desjardins, P. (2003). Nanocavities in He Implanted InP. Journal of Applied Physics, 94(9), 6116-6121. Lien externe
Chun, J. S., Desjardins, P., Lavoie, C., Petrov, I., Cabral, C., & Greene, J. E. (2001). Interfacial Reaction Pathways and Kinetics During Annealing of 111-Textured Al-Tin Bilayers: a Synchrotron X-Ray Diffraction and Transmission Electron Microscopy Study. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 19(5), 2207-2216. Lien externe
Chun, J.-S., Desjardins, P., Petrov, I., Greene, J. E., Lavoie, C., & Cabral, C. J. (2001). Interfacial reaction pathways and kinetics during annealing of epitaxial Al(001)/TiN(001) model diffusion barrier systems. Thin Solid Films, 391(1), 69-80. Lien externe
Chun, J. S., Desjardins, P., Lavoie, C., Shin, C. S., Cabral, C., Petrov, I., & Greene, J. E. (2001). Interfacial Reactions in Epitaxial Al/Tin(111) Model Diffusion Barriers: Formation of an Impervious Self-Limited Wurtzite- Structure Aln(0001) Blocking Layer. Journal of Applied Physics, 89(12), 7841-7845. Lien externe
Chun, J.-S., Carlsson, J. R. A., Desjardins, P., Bergstrom, D. B., Petrov, I., Greene, J. E., Lavoie, C., & Cabral, C. (2001). Synchrotron x-ray diffraction and transmission electon microscopy studies of interfacial reaction paths and kinetics annealing of fully-002-textured Al/TiN bilayers. Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 19(1), 182-191. Lien externe
Daoust, P., Desjardins, P., Masut, R. A., & Côté, M. (2022). Longitudinal piezoelectric, elastic, and dielectric properties of rare-earth aluminum nitride alloys determined by density-functional perturbation theory. Physical Review Materials, 6(3), 13 pages. Lien externe
Daoust, P., Côté, M., Desjardins, P., & Masut, R. A. (2021). Impact of applied biaxial stress on the piezoelectric, elastic, and dielectric properties of scandium aluminum nitride alloys determined by density functional perturbation theory. AIP Advances, 11(9), 15 pages. Lien externe
Daoust, P., Desjardins, P., Masut, R. A., Gosselin, V., & Côté, M. (2017). Ab initio piezoelectric properties of Al₀.₅ Sc₀.₅ N : impact of alloy configuration on the d₃₃,f piezoelectric strain coefficient. Physical Review Materials, 1(5), 5 pages. Lien externe
Dion, C., Desjardins, P., Shtinkov, N., Schiettekatte, F., Poole, P. J., & Raymond, S. (2008). Effects of grown-in defects on interdiffusion dynamics in inAs/InP(001) quantum dots subjected to rapid thermal annealing. Journal of Applied Physics, 103(8), 083526-083526. Lien externe
Dion, C., Desjardins, P., Shtinkov, N., Robertson, M. D., Schiettekatte, F., Poole, P. J., & Raymond, S. (2008). Intermixing during growth of InAs self-assembled quantum dots in InP: a photoluminescence and tight-binding investigation. Physical Review. B, Condensed Matter and Materials Physics, 77(7), 075338-1. Lien externe
Dion, C., Desjardins, P., Schiettekatte, F., Chicoine, M., Robertson, M. D., Shtinkov, N., Poole, P. J., Wu, X., & Raymond, S. (2008). Vacancy-Mediated Intermixing in Inas/Inp(001) Quantum Dots Subjected to Ion Implantation. Journal of Applied Physics, 104(4), 043527-1. Lien externe
Dion, C., Desjardins, P., Chicoine, M., Schiettekatte, F., Poole, P. J., & Raymond, S. (2007). Drastic Ion-Implantation-Induced Intermixing During the Annealing of Self-Assembled InSs/InP(001) Quantum Dots. Nanotechnology, 18(1), 15404-15500. Lien externe
Dion, C., Poole, P. J., Raymond, S., Desjardins, P., & Schiettekatte, F. (2006). Tuning of the electronic properties of self-assembled InAs/InP(001) quantum dots using grown-in defect mediated intermixing. Applied Physics Letters, 89(13), 31905-31905. Lien externe
Dion, C., Desjardins, P., Schiettekatte, F., Chicoine, M., Poole, P. J., & Raymond, S. (2006). Tuning the Electronic Properties of Self-Assembled InAs/InP(001) Quantum Dots. ECS Meeting Abstracts, MA2006-02(26), 1269-1269. Lien externe
Duval, O., Lafrance, L. P., Savaria, Y., & Desjardins, P. (août 2004). An Integrated Test Platform for Nanostructure Electrical Characterization [Communication écrite]. International Conference on Mems, Nano and Smart Systems (ICMENS 2004), Banff, Canada. Lien externe
D'Arcy-Gall, J., Gall, D., Petrov, I., Desjardins, P., & Greene, J. E. (2001). Quantitative C lattice site distributions in epitaxial Ge1-yCy/Ge(001) layers. Journal of Applied Physics, 90(8), 3910-3918. Lien externe
D'arcy Gall, J., Desjardins, P., Petrov, I., Greene, J. E., Paultre, J. E., Masut, R. A., Gujrathi, S. C., & Roorda, S. (2000). Epitaxial metastable Ge₁₋y Cy (y≤0.02) alloys grown on Ge(001) from hyperthermal beams: C incorporation and lattice sites. Journal of Applied Physics, 88(1), 96-104. Lien externe
D'Arcy-Gall, J., Gall, D., Desjardins, P., & Petrov, I. (2000). Role of fast sputtered particles during sputter deposition: growth of epitaxial Ge0.99C0.01/Ge(001). Physical review. B, Condensed matter, 62(16), 11203-11208. Lien externe
Desjardins, P., Spila, T., Gürdal, O., Taylor, N., & Greene, J. E. (1999). Hybrid surface roughening modes during low-temperature heteroepitaxy: Growth of fully-strained metastable Ge₁₋ₓSnₓ alloys on Ge(001)2*1. Physical review. B, Condensed matter, 60(23), 15933-15998. Lien externe
Desjardins, P., Isnard, L., Marchand, H., & Masut, R. A. (1998). Competing strain relaxation mechanisms in organometallic vapor phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001). Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 776-780. Lien externe
Desjardins, P., Marchand, H., Isnard, L., & Masut, R. A. (1997). Microstructure and strain relaxation in organometallic vapor phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001). Journal of Applied Physics, 81(8), 3501-3511. Lien externe
Desjardins, P. (1996). Caractérisation et modélisation de la croissance épitaxiale et de la relaxation des contraintes dans les hétérostructures semi-conductrices [Thèse de doctorat, École Polytechnique de Montréal]. Disponible
Desjardins, P., & Greene, J. E. (1996). Step-flow epitaxial growth on two-domain surfaces. Journal of Applied Physics, 79(3), 1423-1434. Lien externe
Desjardins, P., Beaudoin, M., Leonelli, R., L'Espérance, G., & Masut, R. A. (1996). Structural and optical properties of strain-relaxed InAsP/InP heterostructures grown by metalorganic vapor phase epitaxy on InP(001) using tertiarybutylarsine. Journal of Applied Physics, 80(2), 846-852. Lien externe
Desjardins, P., Izquierdo, R., & Meunier, M. (1993). Diode laser induced chemical vapor deposition of WSiₓ on TiN from WF₆ and SiH₄. Journal of Applied Physics, 73(10), 5216-5216. Lien externe
Desjardins, P., Izquierdo, R., & Meunier, M. (1992). Dépôt par laser de WSiₓ sur du TiN à partir de WF₆ et de SiH₄. [Laser deposition of WSiₓ on TiN using a mixture of WF₆ and SiH₄]. Canadian Journal of Physics, 70(10-11), 898-903. Lien externe
Desjardins, P., Izquierdo, R., & Meunier, M. (décembre 1991). Diode laser induced chemical vapor deposition of WSiₓ from WF₆ and SiH₄ [Communication écrite]. 1991 MRS Fall Meeting, Boston, Mass.. Publié dans MRS Proceedings, 236. Lien externe
Evoy, S., Bernier, M.-H., Desjardins, P., Izquierdo, R., Meunier, M., & Sacher, E. (août 1993). Diode laser-induced pyrolitic decomposition of spin-coated organometallic thin films [Communication écrite]. Laser-Assisted Fabrication of Thin Films and Microstructures, Québec, Canada. Lien externe
Fournier-Lupien, J.-H., Mukherjee, S., Wirths, S., Pippel, E., Hayazawa, N., Mussler, G., Hartmann, J. M., Desjardins, P., Buca, D., & Moutanabbir, O. (2015). Erratum: Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys. Applied Physics Letters, 106(17). Lien externe
Fournier-Lupien, J.-H., Chagnon, D., Lévesque, P., Wirths, S., Pippel, E., Mussler, G., Hartmann, J. M., Mantl, S., Desjardins, P., Buca, D., & Moutanabbir, O. (mai 2015). In situ studies of germanium-tin and silicon-germanium-tin dynamics of phase separation [Affiche]. 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec. Non disponible
Fournier-Lupien, J.-H., Mukherjee, S., Wirths, S., Pippel, E., Hayazawa, N., Mussler, G., Hartmann, J. M., Desjardins, P., Buca, D., & Moutanabbir, O. (2013). Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys. Applied Physics Letters, 103(26). Lien externe
Foo, Y. L., Bratland, K. A., Cho, B., Desjardins, P., & Greene, J. E. (2003). Si₁₋yCy/Si(001) gas-source molecular beam epitaxy from Si₂H₆ and CH₃SiH₃: surface reaction paths and growth kinetics. Journal of Applied Physics, 93(7), 3944-3950. Lien externe
Foo, Y. L., Bratland, K. A., Cho, B., Soares, J. A. N. T., Desjardins, P., & Greene, J. E. (2002). C incorporation and segregation during Si₁₋yCy/Si(001) gas-source molecular beam epitaxy from Si₂H₆ and CH₃SiH₃. Surface Science, 513(3), 475-484. Lien externe
Fafard, S., McCaffrey, J., Feng, Y., Allen, C. N., Marchand, H., Isnard, L., Desjardins, P., Guillon, S., & Masut, R. A. (juillet 1998). Towards quantum dot laser diodes emitting at 1.5 μm [Communication écrite]. ICAPT '98 : Applications of photonic technology 3 :closing the gap between theory, development, and application, Ottawa, CAN. Lien externe
Gagnon, P., Tie, M., Lévesque, P. L., St‐Antoine, B. C., Desjardins, P., & Martel, R. (2024). Direct Measurement of the Absolute Seebeck Coefficient Using Graphene as a Zero Coefficient Reference. The Journal of Physical Chemistry C. Lien externe
Gagnon, P., Tie, M., Lévesque, P., Biron, M., Cardin-St-Antoine, B., Desjardins, P., & Martel, R. (2020). Direct Measurement of Absolute Seebeck Coefficient Using Graphene As a Zero Coefficient Reference. ECS Meeting Abstracts, MA2020-01(B06 : 2D L), 849-849. Lien externe
Gagnon, P., Lapointe, F., Desjardins, P., & Martel, R. (2020). Double-walled carbon nanotube film as the active electrode in an electro-optical modulator for the mid-infrared and terahertz regions. Journal of Applied Physics, 128(23), 233103 (7 pages). Lien externe
Gagnon, P., Biron, M., Desjardins, P., & Martel, R. (2013). DWNT as Active Electrode in Far-IR and THz Optical Modulation Devices. Meeting abstracts, MA2013-01(32), 1134-1134. Lien externe
Ghafoor, N., Johnson, L. J. S., Klenov, D. O., Demeulemeester, J., Desjardins, P., Petrov, I., Hultman, L., & Oden, M. (2013). Nanolabyrinthine ZrAlN thin films by self-organization of interwoven single-crystal cubic and hexagonal phases. APL Materials, 1(2), 6 pages. Lien externe
Gaudet, S., De Keyser, K., Lambert-Milot, S., Jordan-Sweet, J., Detavernier, C., Lavoie, C., & Desjardins, P. (2013). Three dimensional reciprocal space measurement by x-ray diffraction using linear and area detectors: Applications to texture and defects determination in oriented thin films and nanoprecipitates. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 31(2). Lien externe
Gagnon, P., Biron, M., Flahaut, E., Desjardins, P., & Martel, R. (2011). Diameter and Chiral Selective Purification of SWNT and DWNT Using CO2. ECS Meeting Abstracts, MA2011-01(33), 1703-1703. Lien externe
Gaudet, S., Desjardins, P., & Lavoie, C. (2011). The thermally-induced reaction of thin Ni films with Si : Effect of the substrate orientation. Journal of Applied Physics, 110(11). Lien externe
Gaudet, S., Coia, C., Desjardins, P., & Lavoie, C. (2010). Metastable phase formation during the reaction of Ni films with Si(001): The role of texture inheritance. Journal of Applied Physics, 107(9), 093515-093515. Lien externe
Girard-Lauriault, P.-L., Truica-Marasescu, F., Petit, A., Wang, H. T., Desjardins, P., Antoniou, J., Mwale, F., & Wertheimer, M. R. (2009). Adhesion of human U937 monocytes to nitrogen-rich organic thin films: Novel insights into the mechanism of cellular adhesion. Macromolecular Bioscience, 9(9), 911-921. Lien externe
Guihard, M., Turcotte-Tremblay, P., Gaudet, S., Coia, C., Roorda, S., Desjardins, P., Lavoie, C., & Schiettekatte, F. (2009). Controlling nickel silicide phase formation by Si implantation damage. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 267(8-9), 1285-1289. Lien externe
Girard-Lauriault, P.-L., Desjardins, P., Unger, W. E. S., Lippitz, A., & Wertheimer, M. R. (2008). Chemical Characterisation of Nitrogen-Rich Plasma-Polymer Films Deposited in Dielectric Barrier Discharges at Atmospheric Pressure. Plasma Processes and Polymers, 5(7), 631-644. Lien externe
Gaudet, S., Lavoie, C., Detavernier, C., & Desjardins, P. (mai 2006). Germanide phase formation and texture [Communication écrite]. 2006 International SiGe Technology and Device Meeting, 15-17 May 2006, Princeton, NJ, USA. Lien externe
Gaudet, S., Detavernier, C., Lavoie, C., & Desjardins, P. (2006). Reaction of thin Ni films with Ge: phase formation and texture. Journal of Applied Physics, 100(3), 034306-1-034306-10. Lien externe
Gaudet, S., Detavernier, C., Kellock, A. J., Desjardins, P., & Lavoie, C. (2006). Thin film reaction of transition metals with germanium. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 24(3), 474-485. Lien externe
Greene, J., & Desjardins, P. (2006). TSF Volume 500 Editorial. Thin Solid Films, 500(1-2), 1-3. Lien externe
Girard-Lauriault, P.-L., Mwale, F., Iordanova, M., Demers, C., Desjardins, P., & Wertheimer, M. R. (août 2004). Atmospheric pressure deposition of micropatterned nitrogen-rich plasma-polymer films for tissue engineering [Communication écrite]. 9th international symposium on high pressure, low temperature plasma chemistry (Hakone IX), Padova, Italie. Publié dans Plasma Processes and Polymers, 2(3). Lien externe
Girard, J. F., Dion, C., Desjardins, P., Allen, C. N., Poole, P. J., & Raymond, S. (2004). Tuning of the Electronic Properties of Self-Assembled Inas/Inp(001) Quantum Dots by Rapid Thermal Annealing. Applied Physics Letters, 84(17), 3382-3384. Lien externe
Gall, D., Städele, M., Jarrendahl, K., Petrov, I., Desjardins, P., Haasch, R. T., Lee, T.-Y., & Greene, J. E. (2001). Electronic structure of ScN determined using optical spectroscopy, photoemission, andabinitio calculations. Physical review, 63(12). Lien externe
Glass, G., Kim, H., Desjardins, P., Taylor, N., Spila, T., Lu, Q., & Greene, J. E. (2000). Ultra-high B doping (< 10^22 cm-3) during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport. Physical review, 61(11), 7628-7644. Lien externe
Guillon, S., Yip, R. Y.-F., Desjardins, P., Chicoine, M., Bougrioua, Z., Beaudoin, M., Aït-Ouali, A., & Masut, R. A. (1998). Low-pressure organometallic vapor phase epitaxy of coherent InGaAsP/InP and InGaAsP/InAsP multilayers on InP(001). Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 781-785. Lien externe
Gurdal, O., Desjardins, P., Carlsson, J. R. A., Taylor, N., Radamson, H. H., Sundgren, J.-E., & Greene, J. E. (1998). Low-temperature growth and critical epitaxial thickness of fully-strained metastable Ge₁₋ₓSnₓ (x <0.26) alloys on Ge(001)2x1. Journal of Applied Physics, 83(1), 162-170. Lien externe
Gujrathi, S. C., Roorda, S., D'Arcy, J. G., Pflueger, R. L., Desjardins, P., Petrov, I., & Greene, J. E. (1998). Quantitative compositional depth profiling of Si₁₋ₓ₋yGeₓCy thin films by simultaneous elastic recoil detection and Rutherford backscattering spectrometry. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 136-138, 654-660. Lien externe
Hafez, H. A., Lévesque, P. L., Al-Naib, I., Dignam, M. M., Chai, X., Choubak, S., Desjardins, P., Martel, R., & Ozaki, T. (septembre 2016). Optical-pump/intense-THz-probe spectroscopy of gated graphene [Communication écrite]. 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz 2016), Copenhagen, Denmark (2 pages). Lien externe
Hafez, H. A., Levesque, P. L., Al-Naib, I., Dignam, M. M., Chai, X., Choubak, S., Desjardins, P., Martel, R., & Ozaki, T. (2015). Intense terahertz field effects on photoexcited carrier dynamics in gated graphene. Applied Physics Letters, 107(25), 5 pages. Lien externe
Izquierdo, R., Desjardins, P., Elyaagoubi, N., & Meunier, M. (novembre 1992). Laser-Assisted Low-Temperature Deposition of WSiₓ from WF₆ and SiH₄ [Communication écrite]. Chemical Perspectives of Microelectronic Materials III, Boston, Mass.. Publié dans MRS Proceedings, 282. Lien externe
Jacobberger, R. M., Murray, E. A., Fortin-Deschênes, M., Göltl, F., Behn, W. A., Krebs, Z. J., Levesque, P. L., Savage, D. E., Smoot, C., Lagally, M. G., Desjardins, P., Martel, R., Brar, V., Moutanabbir, O., Mavrikakis, M., & Arnold, M. S. (2019). Alignment of semiconducting graphene nanoribbons on vicinal Ge(001). Nanoscale, 11(11), 4864-4875. Lien externe
Jacobberger, R. M., Kiraly, B., Fortin-Deschenes, M., Levesque, P. L., McElhinny, K. M., Brady, G. J., Rojas Delgado, R., Singha Roy, S., Mannix, A., Lagally, M. G., Evans, P. G., Desjardins, P., Martel, R., Hersam, M. C., Guisinger, N. P., & Arnold, M. S. (2015). Direct oriented growth of armchair graphene nanoribbons on germanium. Nature Communications, 6(1). Disponible
Jacobberger, R. M., Levesque, P. L., Xu, F., Wu, M.-Y., Choubak, S., Desjardins, P., Martel, R., & Arnold, M. S. (2015). Tailoring the growth rate and surface facet for synthesis of high-quality continuous graphene films from CH₄ at 750 °C via chemical vapor deposition. Journal of Physical Chemistry C, 119(21), 11516-11523. Lien externe
Kampfrath, T., Volkmann, K. , Nötzold, J., Aguirre, C. M., Desjardins, P., Martel, R., Krenz, M., Frischkorn, C., Wolf, M., & Perfetti, L. (2008). Ultrafast far-infrared optics of carbon nanotubes. Physical Review Letters, 101(26), 267403-267403. Lien externe
Kampfrath, T., Perfetti, L., von Volkmann, K., Aguirre, C. M., Desjardins, P., Martel, R., Frischkorn, C., & Wolf, M. (2007). Optical Response of Single-Wall Carbon Nanotube Sheets in the Far-Infrared Spectral Range From 1 Thz to 40 Thz. Physica Status Solidi. B, Basic Solid State Physics, 244(11), 3950-3954. Lien externe
Kim, H., Glass, G., Soares, J. A. N. T., Desjardins, P., & Greene, J. E. (2001). Temperature-modulated Si(001): as gas-source molecular beam epitaxy: growth kinetics and As incorporation. Applied Physics Letters, 79(20), 3263-3265. Lien externe
Kodambaka, S., Petrova, V., Vailionis, A., Desjardins, P., Cahill, D. G., Petrov, I., & Greene, J. E. (2001). TiN(001) and TiN(111) island coarsening kinetics: In-situ scanning tunneling microscopy studies. Thin Solid Films, 392(2), 164-168. Lien externe
Kim, H., Glass, G., Desjardins, P., & Greene, J. E. (2001). Ultra-High doped Si1-xGex(001):B gas-source molecular beam epitaxy: boron surface segregation and its effect on film growth kinetics. Journal of Applied Physics, 89(1), 194-205. Lien externe
Kim, H., Glass, G., Soares, J. A. N. T., Desjardins, P., & Greene, J. E. (2000). Arsenic incorporation during Si(001): As gas-source molecular-beam epitaxy from Si2H6 and AsH3: effects on film growth kinetics. Journal of Applied Physics, 88(12), 7067-7078. Lien externe
Kodambaka, S., Petrova, V., Vailionis, P., Desjardins, P., Cahill, D. G., Petrov, I., & Greene, J. E. (2000). In-situ high-temperature scanning tunneling microscopy studies of two-dimensional island decay kinetics on atomically flat smooth TiN(001). Surface Review and Letters, 7(05n06), 589-593. Lien externe
Kim, H., Desjardins, P., Abelson, J. R., & Greene, J. E. (1998). Pathways for hydrogen desorption from Si₁₋ₓGeₓ(001) during gas-source molecular-beam epitaxy and ultrahigh-vacuum chemical vapor deposition. Physical review. B, Condensed matter, 58(8), 4803-4808. Lien externe
Karr, B. W., Petrov, I., Desjardins, P., Cahill, D. G., & Greene, J. E. (1997). In situ scanning tunneling microscopy studies of the evolution of surface morphology ans microstructure in epitaxial TiN(001) grown by ultra-high-vacuum reactive magnetron sputtering. Surface and Coatings Technology, 94-95, 403-408. Lien externe
Lapointe, F., Rousseau, B., Aymong, V., Nguyen, M., Biron, M., Gaufres, E., Choubak, S., Han, Z., Bouchiat, V., Desjardins, P., Cote, M., & Martel, R. (2017). Antiresonances in the Mid-Infrared Vibrational Spectrum of Functionalized Graphene. Journal of Physical Chemistry C, 121(16), 9053-9062. Lien externe
Lévesque, P. L., Choubak, S., Charpin, C.-B., Cardinal, D., Gagnon, P., Nguyen, M., Desjardins, P., & Martel, R. (mars 2017). Graphene growth studies in purified conditions [Communication écrite]. 7th Graphene and 2D Materials International Conference & Exhibition (Graphene 2017), Barcelona, Spain. Lien externe
Lapointe, F., Rousseau, B., Nguyen, M., Aymong, V., Biron, M., Gaufrès, É., Desjardins, P., Côté, M., & Martel, R. (mai 2017). Phonon and defect induced transparencies in the mid-infrared spectrum of grafted single layer graphene [Résumé]. 231st ECS Meeting, New Orleans, LA. Publié dans Meeting Abstracts, MA2017-01(12). Lien externe
Lacroix, C., Lambert-Milot, S., Desjardins, P., Masut, R. A., & Ménard, D. (2016). Surface induced magnetization reversal of MnP nanoclusters embedded in GaP. Journal of Applied Physics, 119(10). Lien externe
Lapointe, F., Bouilly, D., Nguyen, M., Gaufrès, E., Tang, N., Desjardins, P., & Martel, R. (2013). Disorder-Induced Electron-Phonon Interactions and Gap States in Carbon Nanotubes. Meeting abstracts, MA2013-01(32), 1139-1139. Lien externe
Lacroix, C., Lambert-Milot, S., Masut, R. A., Desjardins, P., & Ménard, D. (2013). Ferromagnetic resonance measurements of GaP epilayers with embedded MnP nanoclusters grown on GaP(001). Physical Review B, 87(2), 024412 (10 pages). Lien externe
Lapointe, F., Gaufrès, É., Tremblay, I., Tang, N., Desjardins, P., & Martel, R. (2012). Fano Resonances in Mid-Infrared Spectra of Single-Walled Carbon Nanotubes. ECS Meeting Abstracts, MA2012-01(31), 1177-1177. Lien externe
Lapointe, F., Gaufrès, É., Tremblay, I., Tang, N. Y.-W., Martel, R., & Desjardins, P. (2012). Fano resonances in the midinfrared spectra of single-walled carbon nanotubes. Physical Review Letters, 109(9). Lien externe
Lambert-Milot, S., Gaudet, S., Lacroix, C., Ménard, D., Masut, R. A., Lavoie, C., & Desjardins, P. (2012). MnP nanoclusters embedded in GaP epitaxial films grown by organometallic vapor-phase epitaxy: A reciprocal space mapping and transmission electron microscopy study. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 30(6), 22-22. Lien externe
Levesque, P. L., Sabri, S. S., Aguirre, C. M., Guillemette, J., Siaj, M., Desjardins, P., Szkopek, T., & Martel, R. (2011). Probing charge transfer at surfaces using graphene transistors. Nano Letters, 11(1), 132-137. Lien externe
Levesque, P. L., Sabri, S. S., Aguirre, C. M., Guillemette, J., Siaj, M., Desjardins, P., Szkopek, T., & Martel, R. (2011). Probing Electrochemical Charge Transfer at Surfaces Using Graphene Transistors. ECS Meeting Abstracts, MA2011-01(39), 1868-1868. Lien externe
Lapointe, F., Aguirre, C. M., Levesque, P. L., Desjardins, P., & Martel, R. (2011). Substrate Chemistry Modifies Carbon Nanotubes Field-Effect Transistors Transport Characteristics. ECS Meeting Abstracts, MA2011-01(34), 1747-1747. Lien externe
Lévesque, A., Desjardins, P., Leonelli, R., & Masut, R. A. (2011). Temperature dependence of the photoluminescence spectra from InAs(P)/InP multilayers containing thick quantum dots: Dot-size-dependent carrier dynamics. Physical Review. B, Condensed Matter and Materials Physics, 83(23), 235304. Lien externe
Lacroix, C., Lambert-Milot, S., Desjardins, P., Masut, R. A., & Ménard, D. (2009). Adjusting the magnetic properties of semiconductor epilayers by the crystallographic orientation of embedded highly anisotropic magnetic nanoclusters. Journal of Applied Physics, 105(7), 07-119. Lien externe
Lacroix, C., Lambert-Milot, S., Desjardins, P., Masut, R. A., & Ménard, D. (2008). Magnetic Anisotropy in Gap(001) Epilayers Containing Mnp Nanoclusters Observed by Angle Dependent Ferromagnetic Resonance Measurements. Journal of Applied Physics, 103(7). Lien externe
Lambert-Milot, S., Lacroix, C., Ménard, D., Masut, R. A., Desjardins, P., Garcia-Hernandez, M., & De Andres, A. (2008). Metal-Organic Vapor Phase Epitaxy of Crystallographically Oriented Mnp Magnetic Nanoclusters Embedded in Gap(001). Journal of Applied Physics, 104(8). Lien externe
Lévesque, A., Shtinkov, N., Masut, R. A., & Desjardins, P. (2008). Self-Organization of InAs/InP Quantum Dot Multilayers: Pseudophase Diagram Describing the Transition From Aligned to Antialigned Structures. Physical Review Letters, 100(4). Lien externe
Lacroix, C., Lambert-Milot, S., Desjardins, P., Masut, R. A., & Ménard, D. (août 2007). Magnetic anisotropy in GaP with embedded MnP nanoclusters [Communication écrite]. 13th Canadian Semiconductor Technology Conference (CSTC 2007), Montréal, Québec. Non disponible
Lanacer, A., Shtinkov, N., Desjardins, P., Masut, R. A., & Leonelli, R. (2007). Optical Emission From InAs/InP Self-Assembled Quantum Dots: Evidence for As/P Intermixing. Semiconductor Science and Technology, 22(12), 1282-1286. Lien externe
Lavoie, C., Coia, C., D'heurle, F. M., Detavernier, C., Cabral, C., Desjardins, P., & Kellock, A. J. (juillet 2004). Reactive Diffusion in the Ni-Si System: Phase Sequence and Formation of Metal-Rich Phases [Communication écrite]. Diffusion in Materials: Dimat 2004 : 6th International Conference on Diffusion in Materials, Cracow, Poland. Lien externe
Lavoie, C., Purtell, R., Coïa, C., Detavernier, C., Desjardins, P., Jordan-Sweet, J., Cabral, C. J., & D'Heurle, F. M. (mai 2002). In situ monitoring of thin film reactions during rapid thermal annealing: nickel silicide formation [Communication écrite]. Rapid thermal and other short-time processing technologies III Electrochemical Society, Philadelphia, PA, USA. Lien externe
Lavoie, C., Meunier, M., Izquierdo, R., Boivin, S., & Desjardins, P. (1991). Large area excimer laser induced deposition of titanium from titanium tetrachloride. Applied Physics A Solids and Surfaces, 53(4), 339-342. Lien externe
Lavoie, C., Meunier, M., Boivin, S., Izquierdo, R., & Desjardins, P. (1991). Profile of titanium lines produced by excimer laser direct writing on lithium niobate. Journal of Applied Physics, 70(4), 2343-2347. Lien externe
Mukherjee, S., Nateghi, N., Jacobberger, R. M., Bouthillier, E., de la Mata, M., Arbiol, J., Coenen, T., Cardinal, D., Levesque, P., Desjardins, P., Martel, R., Arnold, M. S., & Moutanabbir, O. (2018). Growth and luminescence of polytypic InP on epitaxial graphene. Advanced Functional Materials, 28(8), 1705592. Lien externe
Malikova, L., Pollak, F. H., Masut, R. A., Desjardins, P., & Mourokh, L. G. (2003). Temperature Dependent Contactless Electroreflectance Study of Intersubband Transitions in a Self-Assembled InAs/InP (001) Quantum Dot Structure. Journal of Applied Physics, 94(8), 4995-4998. Lien externe
Meunier, M., Izquierdo, R., Tabbal, M., Evoy, S., Desjardins, P., Bernier, M.-H., Bertomeu, J., Elyaagoubi, N., Suys, M., Sacher, E., & Yelon, A. (1997). Laser induced deposition of tungsten and copper. Materials Science and Engineering. B, Solid-State Materials for Advanced Technology, 45(1-3), 200-207. Lien externe
Marchand, H., Desjardins, P., Guillon, S., Paultre, J.-E., Bougrioua, Z., Yip, R. Y.-F., & Masut, R. A. (1997). Metalorganic vapor phase epitaxial growth and structural characterization of self-assembled InAs nanometer-sized islands on InP(001). Journal of Electronic Materials, 26(10), 1205-1213. Lien externe
Meunier, M., Desjardins, P., Tabbal, M., Elyaagoubi, N., Izquierdo, R., & Yelon, A. (1995). Laser processing of tungsten from WF₆ and SiH₄. Applied Surface Science, 86(1), 475-483. Lien externe
Meunier, M., Desjardins, P., Izquierdo, R., Tabbal, M., & Suys, M. (1994). Excimer laser for in situ processing in microelectronics. Dans Laude, L. D. (édit.), Excimer lasers : The tools, fundamentals of their interactions with matter, field of applications (p. 319-338). Lien externe
Meunier, M., Izquierdo, R., Desjardins, P., Tabbal, M., Lecours, A., & Yelon, A. (1992). Laser direct writing of tungsten from WF₆. Thin Solid Films, 218(1-2), 137-143. Lien externe
Meunier, M., Lavoie, C., Boivin, S., Izquierdo, R., & Desjardins, P. (1992). Modeling KrF excimer laser induced deposition of titanium from titanium tetrachloride. Applied Surface Science, 54, 52-55. Lien externe
Meunier, M., Lavoie, C., Boivin, S., Izquierdo, R., Desjardins, P., & Najafi, S. I. (novembre 1990). KrF excimer laser direct writing of titanium lines: modeling and application to the fabrication of Ti:Linbo₃ waveguides [Communication écrite]. 1990 MRS Fall Meeting, Boston, Mass.. Publié dans MRS Proceedings, 201. Lien externe
Nateghi, N., Samik, M., Cardinal, D., Jacobberger, R. M., Way, A. J., de la Mata, M., Martel, R., Desjardins, P., Arbiol, J., Arnold, M. S., & Moutanabbir, O. (2020). Van Der Waals Growth of III-V Semiconductors on Graphene. ECS Meeting Abstracts, MA2020-01(B06 : 2D L), 835-835. Lien externe
Nateghi, N., Mukherjee, S., Choubak, S., Nguyen, M., Lévesque, P., Martel, R., Desjardins, P., & Moutanabbir, O. (mai 2015). Growth of III-V semiconductors on silicon oxide/silicon using graphene interlayer [Affiche]. 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec. Non disponible
Py-Renaudie, A., Daoust, P., Côté, M., Desjardins, P., & Masut, R. A. (2020). Ab initio piezoelectric properties of wurtzite ZnO-based alloys: Impact of the c/a cell ratio. Physical Review Materials, 4(5), 053601 (9 pages). Lien externe
Pougoum, F., Martinu, L., Desjardins, P., Sapieha, J.-E., Gaudet, S., Savoie, S., & Schulz, R. (2016). Effect of high-energy ball-milling on the characteristics of Fe₃Al-based HVOF coatings containing boride and nitride phases. Wear, 358-359, 97-108. Lien externe
Phaneuf-L'Heureux, A.-L., Favron, A., Germain, J.-F., Lavoie, P., Desjardins, P., Leonelli, R., Martel, R., & Francoeur, S. (2016). Polarization-Resolved Raman Study of Bulk-like and Davydov-Induced Vibrational Modes of Exfoliated Black Phosphorus. Nano Letters, 16(12), 7761-7767. Lien externe
Perfetti, L., Kampfrath, T., Schapper, F., Hagen, A., Hertel, T., Aguirre, C. M., Desjardins, P., Martel, R., Frischkorn, C., & Wolf, M. (2006). Ultrafast Dynamics of Delocalized and Localized Electrons in Carbon Nanotubes. Physical Review Letters, 96(2). Lien externe
Park, S. Y., D'Arcy-Gall, J., Gall, D., Kim, Y. W., Desjardins, P., & Greene, J. E. (2002). C Lattice Site Distributions in Metastable Ge₁₋yCy Alloys Grown on Ge(001) by Molecular-Beam Epitaxy. Journal of Applied Physics, 91(6), 3644-3652. Lien externe
Park, S. Y., D'Arcy-Gall, J., Gall, D., Soares, J. A. N. T., Kim, Y.-W., Kim, H., Desjardins, P., Greene, J. E., & Bishop, S. G. (2002). Carbon Incorporation Pathways and Lattice Sites in Si₁₋yCy Alloys Grown on Si(001) by Molecular-Beam Epitaxy. Journal of Applied Physics, 91(9), 5716-5727. Lien externe
Raymond, S., Labrie, D., Girard, J.-F., Poirier, S., Awirothananon, S., Poole, P. J., Marchand, H., Desjardins, P., & Masut, R. A. (novembre 2000). Tuning of the electronic properties of self-assembled InAs/InP quantum dots by rapid thermal annealing [Communication écrite]. Semiconductor quantum dots II, Boston, USA. Non disponible
Rojas-López, M., Navarro-Contreras, H., Desjardins, P., Gurdal, O., Taylor, N., Carlsson, J. R. A., & Greene, J. E. (1998). Raman scattering from fully strained Ge1-xSnx (x<=0.22) alloys grown on Ge(001)2x1 by low-temperature molecular beam epitaxy. Journal of Applied Physics, 84(4), 2219-2223. Lien externe
Simoneau, L.-P., Villeneuve, J., Aguirre, C. M., Martel, R., Desjardins, P., & Rochefort, A. (2013). Influence of statistical distributions on the electrical properties of disordered and aligned carbon nanotube networks. Journal of Applied Physics, 114(11), 8-8. Lien externe
Shtinkov, N., Desjardins, P., Masut, R. A., & Côté, M. (2006). Nitrogen incorporation and lattice constant of strained dilute GaAs₁₋ₓNₓ layers on GaAs (001): an ab initio study. Physical Review. B, Condensed Matter and Materials Physics, 74(3), 035211 (8 pages). Lien externe
Shtinkov, N., Turcotte, S., Beaudry, J. N., Desjardins, P., & Masut, R. A. (2004). Electronic and Optical Properties of Gaasn/Gaas Quantum Wells: a Tight-Binding Study. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(4), 1606-1609. Lien externe
Shtinkov, N., Desjardins, P., Masut, R. A., & Vlaev, S. J. (2004). Lateral confinement and band mixing in ultrathin semiconductor quantum wells with steplike interfaces. Physical Review. B, Condensed Matter and Materials Physics, 70(15), 155302. Lien externe
Shtinkiv, N., Desjardins, P., & Masut, R. A. (juillet 2004). Localized and extended states in semiconductor quantum wells with wire-like interface Islands [Communication écrite]. 27th international conference on the physics of semiconductors, Flagstaff, Arizona, USA. Lien externe
Spila, T., Desjardins, P., D'Arcy-Gall, J., Twesten, R. D., & Greene, J. E. (2003). Effect of steady-state hydrogen coverage on the evolution of crosshatch morphology during Si1-xGex/Si(001) growth from hybride precursors. Journal of Applied Physics, 93(4), 1918-1925. Lien externe
Shtinkov, N., Desjardins, P., & Masut, R. A. (2003). Empirical tight-binding model for the electronic structure of dilute GaNAs alloys. Physical Review. B, Condensed Matter and Materials Physics, 67(8), 081202. Lien externe
Shtinkov, N., Desjardins, P., & Masut, R. A. (décembre 2002). Lateral confinement of carriers in ultrathin semiconductor quantum wells [Communication écrite]. 4th International Conference on Low Dimensional Structures and Devices (LDSD 2002), Fortaleza, Brazil. Publié dans Microelectronics Journal, 34(5-8). Lien externe
Shtinkov, N., Desjardins, P., & Masut, R. A. (2002). Electronic states of ultrathin InAs/InP (001) quantum wells: a tight-binding study of the effects of band offset, strain, and intermixing. Physical Review. B, Condensed Matter and Materials Physics, 66(19), 195303 (8 pages). Lien externe
Spila, T., Desjardins, P., Vailionis, A., Kim, H., Taylor, N., Cahill, D. G., Greene, J. E., Guillon, S., & Masut, R. A. (2002). Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si₀.₇ Ge₀.₃ layers on Si(001). Journal of Applied Physics, 91(6), 3579-3588. Lien externe
Shin, C.-S., Gall, D., Kim, Y.-W., Desjardins, P., Petrov, I., Greene, J. E., Odén, M., & Hultman, L. (2001). Epitaxial NaCl-structure delta-TaNx(001): electronic transport properties, elastic modulus, and hardness vs. N/Ta ratio. Journal of Applied Physics, 90(6), 2879-2895. Lien externe
Soares, J. A. N. T., Kim, H., Glass, G., Desjardins, P., & Greene, J. E. (1999). Arsenic-doped Si(001) gas-source molecular-beam epitaxy: Growth kinetics and transport properties. Applied Physics Letters, 74(9), 1290-1292. Lien externe
Turcotte-Tremblay, P., Guihard, M., Gaudet, S., Chicoine, M., Lavoie, C., Desjardins, P., & Schiettekatte, F. (2013). Thin film Ni-Si solid-state reactions: Phase formation sequence on amorphized Si. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 31(5). Lien externe
Turcotte, S., Beaudry, J.-N., Masut, R. A., Desjardins, P., Bentoumi, G., & Leonelli, R. (2012). Abnormal Broadening of the Optical Transitions in (Ga,As)N/GaAs Quantum Wells. Physical Review B, 85(3), 033304 (4 pages). Lien externe
Turcotte, S., Larouche, S., Beaudry, J.-N., Martinu, L., Masut, R. A., Desjardins, P., & Leonelli, R. (2009). Evidence of valence band perturbations in GaAsN/GaAs(001): Combined variable-angle spectroscopic ellipsometry and modulated photoreflectance investigation. Physical Review B, 80(8). Lien externe
Turcotte, S., Beaudry, J. N., Masut, R. A., Desjardins, P., Bentoumi, G., & Leonelli, R. (2008). Experimental Investigation of the Variation of the Absorption Coefficient With Nitrogen Content in GaasN and GaInAsN Grown on GaAs (001). Journal of Applied Physics, 104(8), 083511. Lien externe
Timoshevskii, V., Côté, M., Gilbert, G., Leonelli, R., Turcotte, S., Beaudry, J. N., Desjardins, P., Larouche, S., Martinu, L., & Masut, R. A. (2006). Experimental and Theoretical Studies of the E+ Optical Transition in GaAsN Alloys. Physical Review B, 74(16). Lien externe
Turcotte, S., Shtinkov, N., Desjardins, P., Masut, R. A., & Leonelli, R. (2004). Empirical Tight-Binding Calculations of the Electronic Structure of Dilute III-V-N Semiconductor Alloys. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(3), 776-780. Lien externe
Tchebotareva, A., Brebner, J. L., Roorda, S., Desjardins, P., & White, C. W. (2002). Structural properties of InAs nanocrystals formed by sequential implantation of In and As ions in the Si (100) matrix. Journal of Applied Physics, 92(8), 4664-4671. Lien externe
Taylor, N., Kim, H., Desjardins, P., Foo, Y. L., & Greene, J. E. (2000). Si(001)16x2 gas-source molecular-beam epitaxy: growth kinetics. Applied Physics Letters, 76(20), 2853-2855. Lien externe
Taylor, N., Kim, H., Spila, T., Eades, J. A., Glass, G., Desjardins, P., & Greene, J. E. (1999). Growth of Si₁₋ₓGeₓ(011) on Si(011)16x2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions. Journal of Applied Physics, 85(1), 501-511. Lien externe
Virgilio, N., Desjardins, P., L'Espérance, G., & Favis, B. D. (2010). Modified interfacial tensions measured in situ in ternary polymer blends demonstrating partial wetting. Polymer, 51(6), 1472-1484. Lien externe
Virgilio, N., Desjardins, P., L'Espérance, G., & Favis, B. D. (2009). In situ measure of interfacial tensions in ternary and quaternary immiscible polymer blends demonstrating partial wetting. Macromolecules, 42(19), 7518-7529. Lien externe
Virgilio, N., Desjardins, P., L'Espérance, G., & Favis, B. D. (juin 2008). The Neumann triangle method to measure interfacial tensions in immiscible polymer blends using focused ion beam and atomic force microscopy [Communication écrite]. 24th Annual meeting of Polymer Processing Society, Salerno, Italy. Non disponible
Virgilio, N., Desjardins, P., L'Espérance, G., & Favis, B. D. (août 2007). Novel self-assembling pearl necklace microstructure induced by partial wetting in ternary polymer blends [Résumé]. ACS Polymeric Materials: Science and Engineering. Fall Meeting 2007., Boston, Mass., USA. Non disponible
Virgilio, N., Pépin, M. F., Desjardins, P., L'Espérance, G., & Favis, B. D. (août 2005). High contrast imaging of interphases in ternary polymer blends using focused ion beam preparation and atomic force microscopy [Communication écrite]. PPS 2005 America's Regional Meeting of the Polymer Processing Society, Québec, QC, Canada.. Non disponible
Virgilio, N., Favis, B. D., Pepin, M. F., Desjardins, P., & L'Espérance, G. (2005). High Contrast Imaging of Interphases in Ternary Polymer Blends Using Focused Ion Beam Preparation and Atomic Force Microscopy. Macromolecules, 38(6), 2368-2375. Lien externe
Veres, T., Desjardins, P., Cochrane, R. W., Cai, M., Rouabhi, M., Cheng, L., Abdouche, R., & Sutton, M. (2001). Mev Si+ Irradiation of Fe/Ni Bilayers: Influence of Microstructural and Interfacial Changes on Magnetic Properties. Thin Solid Films, 382(1-2), 164-171. Lien externe
Veres, T., Cai, M., Cochrane, R. W., Rouabhi, M., Roorda, S., & Desjardins, P. (2001). MeV Si+ irradiation of Ni/Fe multilayers: structural, transport, and magnetic properties. Thin Solid Films, 382(1-2), 172-182. Lien externe
Vailionis, A., Cho, B., Glass, G., Desjardins, P., Cahill, D. G., & Greene, J. E. (2000). Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001). Physical Review Letters, 85(17), 3672-3675. Lien externe
Wei, P., Chicoine, M., Gujrathi, S., Schiettekatte, F., Beaudry, J. N., Masut, R. A., & Desjardins, P. (2004). Characterization of GaAs₁₋ₓ Nₓ epitaxial layers by ion beam analysis. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(3), 908-911. Lien externe
Yip, R. Y.-F., Desjardins, P., Isnard, L., Aït-Ouali, A., Bensaada, A., Marchand, H., Brebner, J. L., Currie, J. F., & Masut, R. A. (1998). Band alignment and barrier height considerations for the quantum-confined Stark effect. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 801-804. Lien externe
Yip, R. Y.-F., Aït-Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. A. (1997). Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, 81(4), 1905-1915. Lien externe
Zhang, Z., Yang, B., Zhu, Y., Gaudet, S., Rossnagel, S., Kellock, A. J., Ozcan, A., Murray, C., Desjardins, P., Zhang, S.-L., Jordan-Sweet, J., & Lavoie, C. (2010). Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1-xPtx silicide films. Applied Physics Letters, 97(25), 252108-252108. Lien externe
