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Allard, C., Desjardins, P., Gaufrès, E., & Martel, R. (2022). (Invited) Kinetics and Thermodynamics of Swcnts and Bnnts Encapsulation with α-Sexithiophene in Liquid Phase. Meeting abstracts, MA2022-01(9), 726-726. External link
Allard, C., Gaufres, E., Desjardins, P., & Martel, R. (2021). The Kinetics of Dye Encapsulation in Single-Walled Carbon Nanotubes Probed By Statistical Raman Imaging. ECS Meeting Abstracts, MA2021-01(11), 572-572. External link
Allard, C., Gaufrès, E., Desjardins, P., & Martel, R. (2020). Raman Imaging Study of Alpha-Sexithiophene Encapsulation in Single-Walled Carbon Nanotubes. Meeting abstracts, MA2020-01(7), 677-677. External link
Allard, C., Schu, L., Fossard, F., Recher, G., Nascimento, R., Flahaut, E., Loiseau, A., Desjardins, P., Martel, R., & Gaufres, E. (2020). Confinement of Dyes inside Boron Nitride Nanotubes: Photostable and Shifted Fluorescence down to the Near Infrared. Advanced Materials, 32(29), 2001429 (10 pages). External link
Anahory, Y., Guihard, M., Smeets, D., Karmouch, R., Schiettekatte, F., Vasseur, P., Desjardins, P., Hu, L. A., Allen, L. H., Leon-Gutierrez, E., & Rodriguez-Viejo, J. (2010). Fabrication, Characterization and Modeling of Single-Crystal Thin Film Calorimeter Sensors. Thermochimica Acta, 510(1-2), 126-136. External link
Aguirre, C. M., Ternon, C., Paillet, M., Desjardins, P., & Martel, R. (2009). Carbon nanotubes as injection electrodes for organic thin film transistors. Nano Letters, 9(4), 1457-1461. External link
Aguirre, C. M., Levesque, P. L., Paillet, M., Lapointe, F., St-Antoine, B. C., Desjardins, P., & Martel, R. (2009). The role of the oxygen/water redox couple in suppressing electron conduction in field-effect transistors. Advanced Materials, 21(30), 3087-3091. External link
Adam, E., Aguirre, C. M., Marty, L., St-Antoine, B. C., Meunier, F., Desjardins, P., Ménard, D., & Martel, R. (2008). Electroluminescence From Single-Wall Carbon Nanotube Network Transistors. Nano Letters, 8(8), 2351-2355. External link
Arsenault, L. F., Movaghar, B., Desjardins, P., & Yelon, A. (2008). Magnetotransport in the Insulating Regime of Mn-Doped Gaas. Physical Review. B, Condensed Matter and Materials Physics, 78(7), 075202-1 - 075202-12-075202-1 - 075202-12. External link
Arsenault, L.-F., Movaghar, B., Desjardins, P., & Yelon, A. (2008). Transport in the metallic regime of Mn-doped III-V semiconductors. Physical Review. B, Condensed Matter and Materials Physics, 77(11), 115211-1. External link
Aguirre, C. M., Auvray, S., Pigeon, S., Izquierdo, R., Desjardins, P., & Martel, R. (2006). Carbon nanotube sheets as electrodes in organic light-emitting diodes. Applied Physics Letters, 88(18), 183104-1-183104-3. External link
Amassian, A., Svec, M., Desjardins, P., & Martinu, L. (2006). Dynamics of ion bombardment-induced modifications of Si(001) at the radio-frequency-biased electrode in low-pressure oxygen plasmas: in situ spectroscopic ellipsometry and Monte Carlo study. Journal of Applied Physics, 100(6), 063526. External link
Amassian, A., Svec, M., Desjardins, P., & Martinu, L. (2006). Interface broadening due to ion mixing during thin film growth at the radio-frequency-biased electrode in a plasma-enhanced chemical vapor deposition environment. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 24(6), 2061-2069. External link
Amassian, A., Desjardins, P., & Martinu, L. (2006). Ion-surface interactions on c-Si(001) at the radiofrequency-powered electrode in low-pressure plasmas: ex situ spectroscopic ellipsometry and Monte Carlo simulation study. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 24(1), 45-54. External link
Amassian, A., Desjardins, P., & Martinu, L. (2004, June). Dynamics of surface modifications during optical coating deposition in plasma-assisted processes [Paper]. Optical Interference Coatings, Washington, DC, USA. External link
Amassian, A., Verhnes, R., Sapieha, J.-E., Desjardins, P., & Martinu, L. (2004). Interface engineering during plasma-enhances chemical vapor deposition of porous/dense SiN1.3 optical multilayers. Thin Solid Films, 469-470, 47-53. External link
Amassian, A., Vernhes, R., Sapieha, J.-E., Desjardins, P., & Martinu, L. (2004, January). Interface engineering of porous/dense multilayers of SiN1.3: in situ real-time spectroscopic ellipsometry study [Paper]. 47th Society of Vacuum Coaters Technical Conference. External link
Amassian, A., Vernhes, R., Sapieha, J.-E., Desjardins, P., & Martinu, L. (2004, June). Study of the growth and interface engineering of dense/porous SiNx optical coatings by real-time spectroscopic ellipsometry [Paper]. Optical Interference Coatings, Washington, DC, USA. External link
Amassian, A., Desjardins, P., & Martinu, L. (2004). Study of TiO₂ film growth mechanisms in low-pressure plasma by in situ real-time spectroscopic ellipsometry. Thin Solid Films, 447-448(3), 40-45. External link
Amassian, A., Larouche, S., Vernhes, R., Sapieha, J.-E., Desjardins, P., & Martinu, L. (2002, May). Analysis and control of optical film growth by in situ real-time spectroscopic ellipsometry [Paper]. SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging (Opto Canada 2002), Ottawa, Ont., Can.. External link
Amassian, A., Larouche, S., Sapieha, J.-E., Desjardins, P., & Martinu, L. (2002, April). In situ ellipsometric study of the initial growth stages of a TiO₂ by PECVD [Paper]. 45th Annual Technical Conference of the Society of Vacuum Coaters, Lake Buena Vista, FL, USA. External link
Ababou, Y., Desjardins, P., Chennouf, A., Masut, R. A., Yelon, A., Beaudoin, M., Bensaada, A., Leonelli, R., & L'Espérance, G. (1997). Optical absorption and determination of band offset in strain-balanced GaInP/InAsP multiple quantum wells grown by low-pressure metalorganic vapor phase epitaxy. Semiconductor Science and Technology, 12(5), 550-554. External link
Ababou, Y., Desjardins, P., Masut, R. A., Yelon, A., & L'Espérance, G. (1996). Metalorganic vapor phase epitaxy and structural characterization of InP on Si(111). Canadian Journal of Physics, 74(1), S108-S111. External link
Abadou, Y., Desjardins, P., Chennouf, A., Leonelli, R., Hetheringtin, A., Yelon, A., L'Espérance, G., & Masut, R. A. (1996). Structural and optical charact. of InP grown on Si(111) by metalorganic vapor phase epitaxy using thermal cycle growth. Journal of Applied Physics, 80(9), 499-505. External link
Ababou, Y., Desjardins, P., Chennouf, A., Masut, R. A., Yelon, A., Leonelli, R., & L'Espérance, G. (1995, June). Growth of strain-balanced GaInP/InAsP MQW by LP-MOVPE [Paper]. 6th European workshop on Metal-Organic Vapour Phase Epitaxy and related techniques, Gent, Belgique. Unavailable
Beausoleil, A., Desjardins, P., & Rochefort, A. (2014). Impact of nucleation on step-meandering instabilities during step-flow growth on vicinal surfaces. Physical Review E, 89(3). External link
Bratland, K. A., Spila, T., Cahill, D. G., Greene, J. E., & Desjardins, P. (2011). Continuum model of surface roughening and epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy. Journal of Applied Physics, 109(6). External link
Beaudry, C., Boyer, P., Camarero, R., Chaouki, J., Comeau, Y., Dansereau, J., Desjardins, P., Dupuis, C., Hurteau, R., Nicolas, J., & Pierre, S. (2010). Vers la création d'un microprogramme de 3e cycle visant l'enrichissement des habiletés des doctorats. (Technical Report). Unavailable
Beausoleil, A., Desjardins, P., & Rochefort, A. (2008). Effects of Long Jumps, Reversible Aggregation, and Meyer-Neldel Rule on Submonolayer Epitaxial Growth. Physical Review E :Statistical, nonlinear, and soft matter physics, 78(2), 021604-021604. External link
Beaudry, J.-N., Masut, R. A., & Desjardins, P. (2008). GaAs₁₋ₓNₓ on GaAs(001): Nitrogen Incorporation Kinetics From Trimethylgallium, Tertiarybutylarsine, and 1,1-Dimethylhydrazine Organometallic Vapor-Phase Epitaxy. Journal of Crystal Growth, 310(6), 1040-1048. External link
Bentoumi, G., Yaïche, Z., Leonelli, R., Beaudry, J. N., Desjardins, P., & Masut, R. A. (2008). Low-Temperature Emission in Dilute GaAsN Alloys Grown by Metalorganic Vapor Phase Epitaxy. Journal of Applied Physics, 103(6), 063526-1-063526-5. External link
Beaudry, J.-N., Shtinkov, N., Masut, R. A., Desjardins, P., & Jiménez Riobóo, R. J. (2007). Compositional dependence of the elastic constants of dilute GaAs₁₋ₓNₓ alloys. Journal of Applied Physics, 101(11), 113507-1. External link
Bergeron, D., Shtinkov, N., Masut, R. A., & Desjardins, P. (2005). Green's function matching method for one- and zero-dimensional heterostructures. Physical Review. B, Condensed Matter and Materials Physics, 72(24), 245308. External link
Bentoumi, G., Timoshevskii, V., Madini, N., Côté, M., Leonelli, R., Beaudry, J. N., Desjardins, P., & Masut, R. A. (2004). Evidence for large configuration-induced band-gap fluctuations in GaAs₁₋ₓNₓ alloys. Physical Review. B, Condensed Matter and Materials Physics, 70(3), 35315.1-35315.5. External link
Beaudry, J.-N., Masut, R. A., Desjardins, P., Wei, P., Chicoine, M., Bentoumi, G., Leonelli, R., Schiettekatte, F., & Guillon, S. (2004). Organometallic vapor phase epitaxy of GaAs₁₋ₓNₓ alloy layers on GaAs(001): Nitrogen incorporation and lattice parameter variation. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(3), 771-775. External link
Bratland, K. A., Foo, Y. L., Soares, J., Spila, T., Desjardins, P., & Greene, J. E. (2003). Mechanism for Epitaxial Breakdown During Low-Temperature Ge(001) Molecular Beam Epitaxy. Physical Review. B, Condensed Matter and Materials Physics, 67(12), 125322-125322. External link
Bratland, K. A., Foo, Y. L., Desjardins, P., & Greene, J. E. (2003). Sn-enhanced epitaxial thickness during low-temperature Ge(001) molecular beam epitaxy. Applied Physics Letters, 82(24), 4247-4247. External link
Beaudoin, M., Desjardins, P., Yip, R. Y.-F., & Masut, R. A. (2000). Optical and structural properties of InAsP/In(Ga)P multilayers on InP(001): Strained-layer multiple quantum well structures and devices. In Manasreh, M. O. (ed.), InP and related compounds : materials, applications and devices . External link
Beaudoin, M., Desjardins, P., Aït-Ouali, A., Brebner, J. L., Yip, R. Y. F., Marchand, H., Isnard, L., & Masut, R. A. (2000). Optical properties and heterojunction band alignment in fully coherent strain-compensated InAsₓP₁₋ₓ /GayIn₁₋yP multilayers on InP(001). Journal of Applied Physics, 87(5), 2320-2326. External link
Beaudoin, M., Bensaada, A., Leonelli, R., Desjardins, P., Masut, R. A., Isnard, L., Chennouf, A., & L'Espérance, G. (1996). Self-consistent determination of the band offsets in InAsₓP₁₋ₓ/InP strained layer quantum wells and the bowing parameter of bulk InAsₓP₁₋ₓ. Physical review. B, Condensed matter, 53(4), 1990-1996. External link
Beaudoin, M., Masut, R. A., Isnard, L., Desjardins, P., Bensaada, A., L'Espérance, G., & Leonelli, R. (1994, November). Band offsets of InAsxP₁₋x/InP strained layer quantum wells grown by LP-MOVPE using TBAs [Paper]. Microcrystalline and nanocrystalline semiconductors : Symposium F of the 1994 Fall Meeting of the Materials Research Society, Boston, USA. External link
Bensaada, A., Suys, M., Beaudoin, M., Desjardins, P., Isnard, L., Masut, R. A., Cochrane, R. W., Currie, J. F., & L'Espérance, G. (1995, June). LP-MOVPE growth and characterization of InₓGa₁₋ₓAs/InP epilayers and multiple quantum wells using tertiarybutylarsine [Paper]. 6th European Workshop on Metal-Organic Vapour Phase Epitaxy and related growth techniques, Ghent, Belgium. Unavailable
Charpin, C.-B., Cardinal, D., Choubak, S., Levesque, P. L., Desjardins, P., & Martel, R. (2016, October). Graphene Growth Kinetics Under Purified Conditions [Paper]. Graphene & 2D Materials International Conference and Exhibition (Graphene Canada 2016), Montréal, Québec. Unavailable
Choubak, S., Lévesque, P., Gagnon, P., Martel, R., & Desjardins, P. (2016). Method of growing a graphene coating or carbon nanotubes on a catalytic substrate. (Patent Application no. US20160376156). External link
Choubak, S., Lévesque, P. L., Gaufrès, É., Biron, M., Desjardins, P., & Martel, R. (2014). Graphene CVD: Interplay Between Growth and Etching on Morphology and Stacking by Hydrogen and Oxidizing Impurities. Journal of Physical Chemistry C, 118(37), 21532-21540. External link
Choubak, S., Biron, M., Levesque, P. L., Martel, R., & Desjardins, P. (2013). No graphene etching in purified hydrogen. Journal of Physical Chemistry Letters, 4(7), 1100-1103. External link
Chicoine, M., Beaudoin, C., Roorda, S., Masut, R. A., & Desjardins, P. (2005). III-V Compliant Substrates Implemented by Nanocavities Introduced by Ion Implantation. Journal of Applied Physics, 97(6). External link
Coia, C., Lavoie, C., D'Heurle, F. M., Detavernier, C., Desjardins, P., & Kellock, A. J. (2005, May). Reactive diffusion in the Ni-Si system: Influence of Ni thickness on the phase formation sequence [Paper]. 207th Meeting of the Electrochemical Society, Québec, Canada. External link
Chicoine, M., Roorda, S., Masut, R. A., & Desjardins, P. (2003). Nanocavities in He Implanted InP. Journal of Applied Physics, 94(9), 6116-6121. External link
Chun, J. S., Desjardins, P., Lavoie, C., Petrov, I., Cabral, C., & Greene, J. E. (2001). Interfacial Reaction Pathways and Kinetics During Annealing of 111-Textured Al-Tin Bilayers: a Synchrotron X-Ray Diffraction and Transmission Electron Microscopy Study. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 19(5), 2207-2216. External link
Chun, J.-S., Desjardins, P., Petrov, I., Greene, J. E., Lavoie, C., & Cabral, C. J. (2001). Interfacial reaction pathways and kinetics during annealing of epitaxial Al(001)/TiN(001) model diffusion barrier systems. Thin Solid Films, 391(1), 69-80. External link
Chun, J. S., Desjardins, P., Lavoie, C., Shin, C. S., Cabral, C., Petrov, I., & Greene, J. E. (2001). Interfacial Reactions in Epitaxial Al/Tin(111) Model Diffusion Barriers: Formation of an Impervious Self-Limited Wurtzite- Structure Aln(0001) Blocking Layer. Journal of Applied Physics, 89(12), 7841-7845. External link
Chun, J.-S., Carlsson, J. R. A., Desjardins, P., Bergstrom, D. B., Petrov, I., Greene, J. E., Lavoie, C., & Cabral, C. (2001). Synchrotron x-ray diffraction and transmission electon microscopy studies of interfacial reaction paths and kinetics annealing of fully-002-textured Al/TiN bilayers. Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 19(1), 182-191. External link
Daoust, P., Desjardins, P., Masut, R. A., & Côté, M. (2022). Longitudinal piezoelectric, elastic, and dielectric properties of rare-earth aluminum nitride alloys determined by density-functional perturbation theory. Physical Review Materials, 6(3), 13 pages. External link
Daoust, P., Côté, M., Desjardins, P., & Masut, R. A. (2021). Impact of applied biaxial stress on the piezoelectric, elastic, and dielectric properties of scandium aluminum nitride alloys determined by density functional perturbation theory. AIP Advances, 11(9), 15 pages. External link
Daoust, P., Desjardins, P., Masut, R. A., Gosselin, V., & Côté, M. (2017). Ab initio piezoelectric properties of Al₀.₅ Sc₀.₅ N : impact of alloy configuration on the d₃₃,f piezoelectric strain coefficient. Physical Review Materials, 1(5), 5 pages. External link
Dion, C., Desjardins, P., Shtinkov, N., Schiettekatte, F., Poole, P. J., & Raymond, S. (2008). Effects of grown-in defects on interdiffusion dynamics in inAs/InP(001) quantum dots subjected to rapid thermal annealing. Journal of Applied Physics, 103(8), 083526-083526. External link
Dion, C., Desjardins, P., Shtinkov, N., Robertson, M. D., Schiettekatte, F., Poole, P. J., & Raymond, S. (2008). Intermixing during growth of InAs self-assembled quantum dots in InP: a photoluminescence and tight-binding investigation. Physical Review. B, Condensed Matter and Materials Physics, 77(7), 075338-1. External link
Dion, C., Desjardins, P., Schiettekatte, F., Chicoine, M., Robertson, M. D., Shtinkov, N., Poole, P. J., Wu, X., & Raymond, S. (2008). Vacancy-Mediated Intermixing in Inas/Inp(001) Quantum Dots Subjected to Ion Implantation. Journal of Applied Physics, 104(4), 043527-1. External link
Dion, C., Desjardins, P., Chicoine, M., Schiettekatte, F., Poole, P. J., & Raymond, S. (2007). Drastic Ion-Implantation-Induced Intermixing During the Annealing of Self-Assembled InSs/InP(001) Quantum Dots. Nanotechnology, 18(1), 15404-15500. External link
Dion, C., Poole, P. J., Raymond, S., Desjardins, P., & Schiettekatte, F. (2006). Tuning of the electronic properties of self-assembled InAs/InP(001) quantum dots using grown-in defect mediated intermixing. Applied Physics Letters, 89(13), 31905-31905. External link
Dion, C., Desjardins, P., Schiettekatte, F., Chicoine, M., Poole, P. J., & Raymond, S. (2006). Tuning the Electronic Properties of Self-Assembled InAs/InP(001) Quantum Dots. ECS Meeting Abstracts, MA2006-02(26), 1269-1269. External link
Duval, O., Lafrance, L. P., Savaria, Y., & Desjardins, P. (2004, August). An Integrated Test Platform for Nanostructure Electrical Characterization [Paper]. International Conference on Mems, Nano and Smart Systems (ICMENS 2004), Banff, Canada. External link
D'Arcy-Gall, J., Gall, D., Petrov, I., Desjardins, P., & Greene, J. E. (2001). Quantitative C lattice site distributions in epitaxial Ge1-yCy/Ge(001) layers. Journal of Applied Physics, 90(8), 3910-3918. External link
D'arcy Gall, J., Desjardins, P., Petrov, I., Greene, J. E., Paultre, J. E., Masut, R. A., Gujrathi, S. C., & Roorda, S. (2000). Epitaxial metastable Ge₁₋y Cy (y≤0.02) alloys grown on Ge(001) from hyperthermal beams: C incorporation and lattice sites. Journal of Applied Physics, 88(1), 96-104. External link
D'Arcy-Gall, J., Gall, D., Desjardins, P., & Petrov, I. (2000). Role of fast sputtered particles during sputter deposition: growth of epitaxial Ge0.99C0.01/Ge(001). Physical review. B, Condensed matter, 62(16), 11203-11208. External link
Desjardins, P., Spila, T., Gürdal, O., Taylor, N., & Greene, J. E. (1999). Hybrid surface roughening modes during low-temperature heteroepitaxy: Growth of fully-strained metastable Ge₁₋ₓSnₓ alloys on Ge(001)2*1. Physical review. B, Condensed matter, 60(23), 15933-15998. External link
Desjardins, P., Isnard, L., Marchand, H., & Masut, R. A. (1998). Competing strain relaxation mechanisms in organometallic vapor phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001). Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 776-780. External link
Desjardins, P., Marchand, H., Isnard, L., & Masut, R. A. (1997). Microstructure and strain relaxation in organometallic vapor phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001). Journal of Applied Physics, 81(8), 3501-3511. External link
Desjardins, P. (1996). Caractérisation et modélisation de la croissance épitaxiale et de la relaxation des contraintes dans les hétérostructures semi-conductrices [Ph.D. thesis, École Polytechnique de Montréal]. Available
Desjardins, P., & Greene, J. E. (1996). Step-flow epitaxial growth on two-domain surfaces. Journal of Applied Physics, 79(3), 1423-1434. External link
Desjardins, P., Beaudoin, M., Leonelli, R., L'Espérance, G., & Masut, R. A. (1996). Structural and optical properties of strain-relaxed InAsP/InP heterostructures grown by metalorganic vapor phase epitaxy on InP(001) using tertiarybutylarsine. Journal of Applied Physics, 80(2), 846-852. External link
Desjardins, P., Izquierdo, R., & Meunier, M. (1993). Diode laser induced chemical vapor deposition of WSiₓ on TiN from WF₆ and SiH₄. Journal of Applied Physics, 73(10), 5216-5216. External link
Desjardins, P., Izquierdo, R., & Meunier, M. (1992). Dépôt par laser de WSiₓ sur du TiN à partir de WF₆ et de SiH₄. [Laser deposition of WSiₓ on TiN using a mixture of WF₆ and SiH₄]. Canadian Journal of Physics, 70(10-11), 898-903. External link
Desjardins, P., Izquierdo, R., & Meunier, M. (1991, December). Diode laser induced chemical vapor deposition of WSiₓ from WF₆ and SiH₄ [Paper]. 1991 MRS Fall Meeting, Boston, Mass.. Published in MRS Proceedings, 236. External link
Evoy, S., Bernier, M.-H., Desjardins, P., Izquierdo, R., Meunier, M., & Sacher, E. (1993, August). Diode laser-induced pyrolitic decomposition of spin-coated organometallic thin films [Paper]. Laser-Assisted Fabrication of Thin Films and Microstructures, Québec, Canada. External link
Fournier-Lupien, J.-H., Mukherjee, S., Wirths, S., Pippel, E., Hayazawa, N., Mussler, G., Hartmann, J. M., Desjardins, P., Buca, D., & Moutanabbir, O. (2015). Erratum: Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys. Applied Physics Letters, 106(17). External link
Fournier-Lupien, J.-H., Chagnon, D., Lévesque, P., Wirths, S., Pippel, E., Mussler, G., Hartmann, J. M., Mantl, S., Desjardins, P., Buca, D., & Moutanabbir, O. (2015, May). In situ studies of germanium-tin and silicon-germanium-tin dynamics of phase separation [Poster]. 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec. Unavailable
Fournier-Lupien, J.-H., Mukherjee, S., Wirths, S., Pippel, E., Hayazawa, N., Mussler, G., Hartmann, J. M., Desjardins, P., Buca, D., & Moutanabbir, O. (2013). Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys. Applied Physics Letters, 103(26). External link
Foo, Y. L., Bratland, K. A., Cho, B., Desjardins, P., & Greene, J. E. (2003). Si₁₋yCy/Si(001) gas-source molecular beam epitaxy from Si₂H₆ and CH₃SiH₃: surface reaction paths and growth kinetics. Journal of Applied Physics, 93(7), 3944-3950. External link
Foo, Y. L., Bratland, K. A., Cho, B., Soares, J. A. N. T., Desjardins, P., & Greene, J. E. (2002). C incorporation and segregation during Si₁₋yCy/Si(001) gas-source molecular beam epitaxy from Si₂H₆ and CH₃SiH₃. Surface Science, 513(3), 475-484. External link
Fafard, S., McCaffrey, J., Feng, Y., Allen, C. N., Marchand, H., Isnard, L., Desjardins, P., Guillon, S., & Masut, R. A. (1998, July). Towards quantum dot laser diodes emitting at 1.5 μm [Paper]. ICAPT '98 : Applications of photonic technology 3 :closing the gap between theory, development, and application, Ottawa, CAN. External link
Gagnon, P., Tie, M., Lévesque, P. L., St‐Antoine, B. C., Desjardins, P., & Martel, R. (2024). Direct Measurement of the Absolute Seebeck Coefficient Using Graphene as a Zero Coefficient Reference. The Journal of Physical Chemistry C. External link
Gagnon, P., Tie, M., Lévesque, P., Biron, M., Cardin-St-Antoine, B., Desjardins, P., & Martel, R. (2020). Direct Measurement of Absolute Seebeck Coefficient Using Graphene As a Zero Coefficient Reference. ECS Meeting Abstracts, MA2020-01(B06 : 2D L), 849-849. External link
Gagnon, P., Lapointe, F., Desjardins, P., & Martel, R. (2020). Double-walled carbon nanotube film as the active electrode in an electro-optical modulator for the mid-infrared and terahertz regions. Journal of Applied Physics, 128(23), 233103 (7 pages). External link
Gagnon, P., Biron, M., Desjardins, P., & Martel, R. (2013). DWNT as Active Electrode in Far-IR and THz Optical Modulation Devices. Meeting abstracts, MA2013-01(32), 1134-1134. External link
Ghafoor, N., Johnson, L. J. S., Klenov, D. O., Demeulemeester, J., Desjardins, P., Petrov, I., Hultman, L., & Oden, M. (2013). Nanolabyrinthine ZrAlN thin films by self-organization of interwoven single-crystal cubic and hexagonal phases. APL Materials, 1(2), 6 pages. External link
Gaudet, S., De Keyser, K., Lambert-Milot, S., Jordan-Sweet, J., Detavernier, C., Lavoie, C., & Desjardins, P. (2013). Three dimensional reciprocal space measurement by x-ray diffraction using linear and area detectors: Applications to texture and defects determination in oriented thin films and nanoprecipitates. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 31(2). External link
Gagnon, P., Biron, M., Flahaut, E., Desjardins, P., & Martel, R. (2011). Diameter and Chiral Selective Purification of SWNT and DWNT Using CO2. ECS Meeting Abstracts, MA2011-01(33), 1703-1703. External link
Gaudet, S., Desjardins, P., & Lavoie, C. (2011). The thermally-induced reaction of thin Ni films with Si : Effect of the substrate orientation. Journal of Applied Physics, 110(11). External link
Gaudet, S., Coia, C., Desjardins, P., & Lavoie, C. (2010). Metastable phase formation during the reaction of Ni films with Si(001): The role of texture inheritance. Journal of Applied Physics, 107(9), 093515-093515. External link
Girard-Lauriault, P.-L., Truica-Marasescu, F., Petit, A., Wang, H. T., Desjardins, P., Antoniou, J., Mwale, F., & Wertheimer, M. R. (2009). Adhesion of human U937 monocytes to nitrogen-rich organic thin films: Novel insights into the mechanism of cellular adhesion. Macromolecular Bioscience, 9(9), 911-921. External link
Guihard, M., Turcotte-Tremblay, P., Gaudet, S., Coia, C., Roorda, S., Desjardins, P., Lavoie, C., & Schiettekatte, F. (2009). Controlling nickel silicide phase formation by Si implantation damage. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 267(8-9), 1285-1289. External link
Girard-Lauriault, P.-L., Desjardins, P., Unger, W. E. S., Lippitz, A., & Wertheimer, M. R. (2008). Chemical Characterisation of Nitrogen-Rich Plasma-Polymer Films Deposited in Dielectric Barrier Discharges at Atmospheric Pressure. Plasma Processes and Polymers, 5(7), 631-644. External link
Gaudet, S., Lavoie, C., Detavernier, C., & Desjardins, P. (2006, May). Germanide phase formation and texture [Paper]. 2006 International SiGe Technology and Device Meeting, 15-17 May 2006, Princeton, NJ, USA. External link
Gaudet, S., Detavernier, C., Lavoie, C., & Desjardins, P. (2006). Reaction of thin Ni films with Ge: phase formation and texture. Journal of Applied Physics, 100(3), 034306-1-034306-10. External link
Gaudet, S., Detavernier, C., Kellock, A. J., Desjardins, P., & Lavoie, C. (2006). Thin film reaction of transition metals with germanium. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 24(3), 474-485. External link
Greene, J., & Desjardins, P. (2006). TSF Volume 500 Editorial. Thin Solid Films, 500(1-2), 1-3. External link
Girard-Lauriault, P.-L., Mwale, F., Iordanova, M., Demers, C., Desjardins, P., & Wertheimer, M. R. (2004, August). Atmospheric pressure deposition of micropatterned nitrogen-rich plasma-polymer films for tissue engineering [Paper]. 9th international symposium on high pressure, low temperature plasma chemistry (Hakone IX), Padova, Italie. Published in Plasma Processes and Polymers, 2(3). External link
Girard, J. F., Dion, C., Desjardins, P., Allen, C. N., Poole, P. J., & Raymond, S. (2004). Tuning of the Electronic Properties of Self-Assembled Inas/Inp(001) Quantum Dots by Rapid Thermal Annealing. Applied Physics Letters, 84(17), 3382-3384. External link
Gall, D., Städele, M., Jarrendahl, K., Petrov, I., Desjardins, P., Haasch, R. T., Lee, T.-Y., & Greene, J. E. (2001). Electronic structure of ScN determined using optical spectroscopy, photoemission, andabinitio calculations. Physical review, 63(12). External link
Glass, G., Kim, H., Desjardins, P., Taylor, N., Spila, T., Lu, Q., & Greene, J. E. (2000). Ultra-high B doping (< 10^22 cm-3) during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport. Physical review, 61(11), 7628-7644. External link
Guillon, S., Yip, R. Y.-F., Desjardins, P., Chicoine, M., Bougrioua, Z., Beaudoin, M., Aït-Ouali, A., & Masut, R. A. (1998). Low-pressure organometallic vapor phase epitaxy of coherent InGaAsP/InP and InGaAsP/InAsP multilayers on InP(001). Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 781-785. External link
Gurdal, O., Desjardins, P., Carlsson, J. R. A., Taylor, N., Radamson, H. H., Sundgren, J.-E., & Greene, J. E. (1998). Low-temperature growth and critical epitaxial thickness of fully-strained metastable Ge₁₋ₓSnₓ (x <0.26) alloys on Ge(001)2x1. Journal of Applied Physics, 83(1), 162-170. External link
Gujrathi, S. C., Roorda, S., D'Arcy, J. G., Pflueger, R. L., Desjardins, P., Petrov, I., & Greene, J. E. (1998). Quantitative compositional depth profiling of Si₁₋ₓ₋yGeₓCy thin films by simultaneous elastic recoil detection and Rutherford backscattering spectrometry. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 136-138, 654-660. External link
Hafez, H. A., Lévesque, P. L., Al-Naib, I., Dignam, M. M., Chai, X., Choubak, S., Desjardins, P., Martel, R., & Ozaki, T. (2016, September). Optical-pump/intense-THz-probe spectroscopy of gated graphene [Paper]. 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz 2016), Copenhagen, Denmark (2 pages). External link
Hafez, H. A., Levesque, P. L., Al-Naib, I., Dignam, M. M., Chai, X., Choubak, S., Desjardins, P., Martel, R., & Ozaki, T. (2015). Intense terahertz field effects on photoexcited carrier dynamics in gated graphene. Applied Physics Letters, 107(25), 5 pages. External link
Izquierdo, R., Desjardins, P., Elyaagoubi, N., & Meunier, M. (1992, November). Laser-Assisted Low-Temperature Deposition of WSiₓ from WF₆ and SiH₄ [Paper]. Chemical Perspectives of Microelectronic Materials III, Boston, Mass.. Published in MRS Proceedings, 282. External link
Jacobberger, R. M., Murray, E. A., Fortin-Deschênes, M., Göltl, F., Behn, W. A., Krebs, Z. J., Levesque, P. L., Savage, D. E., Smoot, C., Lagally, M. G., Desjardins, P., Martel, R., Brar, V., Moutanabbir, O., Mavrikakis, M., & Arnold, M. S. (2019). Alignment of semiconducting graphene nanoribbons on vicinal Ge(001). Nanoscale, 11(11), 4864-4875. External link
Jacobberger, R. M., Kiraly, B., Fortin-Deschenes, M., Levesque, P. L., McElhinny, K. M., Brady, G. J., Rojas Delgado, R., Singha Roy, S., Mannix, A., Lagally, M. G., Evans, P. G., Desjardins, P., Martel, R., Hersam, M. C., Guisinger, N. P., & Arnold, M. S. (2015). Direct oriented growth of armchair graphene nanoribbons on germanium. Nature Communications, 6(1). Available
Jacobberger, R. M., Levesque, P. L., Xu, F., Wu, M.-Y., Choubak, S., Desjardins, P., Martel, R., & Arnold, M. S. (2015). Tailoring the growth rate and surface facet for synthesis of high-quality continuous graphene films from CH₄ at 750 °C via chemical vapor deposition. Journal of Physical Chemistry C, 119(21), 11516-11523. External link
Kampfrath, T., Volkmann, K. , Nötzold, J., Aguirre, C. M., Desjardins, P., Martel, R., Krenz, M., Frischkorn, C., Wolf, M., & Perfetti, L. (2008). Ultrafast far-infrared optics of carbon nanotubes. Physical Review Letters, 101(26), 267403-267403. External link
Kampfrath, T., Perfetti, L., von Volkmann, K., Aguirre, C. M., Desjardins, P., Martel, R., Frischkorn, C., & Wolf, M. (2007). Optical Response of Single-Wall Carbon Nanotube Sheets in the Far-Infrared Spectral Range From 1 Thz to 40 Thz. Physica Status Solidi. B, Basic Solid State Physics, 244(11), 3950-3954. External link
Kim, H., Glass, G., Soares, J. A. N. T., Desjardins, P., & Greene, J. E. (2001). Temperature-modulated Si(001): as gas-source molecular beam epitaxy: growth kinetics and As incorporation. Applied Physics Letters, 79(20), 3263-3265. External link
Kodambaka, S., Petrova, V., Vailionis, A., Desjardins, P., Cahill, D. G., Petrov, I., & Greene, J. E. (2001). TiN(001) and TiN(111) island coarsening kinetics: In-situ scanning tunneling microscopy studies. Thin Solid Films, 392(2), 164-168. External link
Kim, H., Glass, G., Desjardins, P., & Greene, J. E. (2001). Ultra-High doped Si1-xGex(001):B gas-source molecular beam epitaxy: boron surface segregation and its effect on film growth kinetics. Journal of Applied Physics, 89(1), 194-205. External link
Kim, H., Glass, G., Soares, J. A. N. T., Desjardins, P., & Greene, J. E. (2000). Arsenic incorporation during Si(001): As gas-source molecular-beam epitaxy from Si2H6 and AsH3: effects on film growth kinetics. Journal of Applied Physics, 88(12), 7067-7078. External link
Kodambaka, S., Petrova, V., Vailionis, P., Desjardins, P., Cahill, D. G., Petrov, I., & Greene, J. E. (2000). In-situ high-temperature scanning tunneling microscopy studies of two-dimensional island decay kinetics on atomically flat smooth TiN(001). Surface Review and Letters, 7(05n06), 589-593. External link
Kim, H., Desjardins, P., Abelson, J. R., & Greene, J. E. (1998). Pathways for hydrogen desorption from Si₁₋ₓGeₓ(001) during gas-source molecular-beam epitaxy and ultrahigh-vacuum chemical vapor deposition. Physical review. B, Condensed matter, 58(8), 4803-4808. External link
Karr, B. W., Petrov, I., Desjardins, P., Cahill, D. G., & Greene, J. E. (1997). In situ scanning tunneling microscopy studies of the evolution of surface morphology ans microstructure in epitaxial TiN(001) grown by ultra-high-vacuum reactive magnetron sputtering. Surface and Coatings Technology, 94-95, 403-408. External link
Lapointe, F., Rousseau, B., Aymong, V., Nguyen, M., Biron, M., Gaufres, E., Choubak, S., Han, Z., Bouchiat, V., Desjardins, P., Cote, M., & Martel, R. (2017). Antiresonances in the Mid-Infrared Vibrational Spectrum of Functionalized Graphene. Journal of Physical Chemistry C, 121(16), 9053-9062. External link
Lévesque, P. L., Choubak, S., Charpin, C.-B., Cardinal, D., Gagnon, P., Nguyen, M., Desjardins, P., & Martel, R. (2017, March). Graphene growth studies in purified conditions [Paper]. 7th Graphene and 2D Materials International Conference & Exhibition (Graphene 2017), Barcelona, Spain. External link
Lapointe, F., Rousseau, B., Nguyen, M., Aymong, V., Biron, M., Gaufrès, É., Desjardins, P., Côté, M., & Martel, R. (2017, May). Phonon and defect induced transparencies in the mid-infrared spectrum of grafted single layer graphene [Abstract]. 231st ECS Meeting, New Orleans, LA. Published in Meeting Abstracts, MA2017-01(12). External link
Lacroix, C., Lambert-Milot, S., Desjardins, P., Masut, R. A., & Ménard, D. (2016). Surface induced magnetization reversal of MnP nanoclusters embedded in GaP. Journal of Applied Physics, 119(10). External link
Lapointe, F., Bouilly, D., Nguyen, M., Gaufrès, E., Tang, N., Desjardins, P., & Martel, R. (2013). Disorder-Induced Electron-Phonon Interactions and Gap States in Carbon Nanotubes. Meeting abstracts, MA2013-01(32), 1139-1139. External link
Lacroix, C., Lambert-Milot, S., Masut, R. A., Desjardins, P., & Ménard, D. (2013). Ferromagnetic resonance measurements of GaP epilayers with embedded MnP nanoclusters grown on GaP(001). Physical Review B, 87(2), 024412 (10 pages). External link
Lapointe, F., Gaufrès, É., Tremblay, I., Tang, N., Desjardins, P., & Martel, R. (2012). Fano Resonances in Mid-Infrared Spectra of Single-Walled Carbon Nanotubes. ECS Meeting Abstracts, MA2012-01(31), 1177-1177. External link
Lapointe, F., Gaufrès, É., Tremblay, I., Tang, N. Y.-W., Martel, R., & Desjardins, P. (2012). Fano resonances in the midinfrared spectra of single-walled carbon nanotubes. Physical Review Letters, 109(9). External link
Lambert-Milot, S., Gaudet, S., Lacroix, C., Ménard, D., Masut, R. A., Lavoie, C., & Desjardins, P. (2012). MnP nanoclusters embedded in GaP epitaxial films grown by organometallic vapor-phase epitaxy: A reciprocal space mapping and transmission electron microscopy study. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 30(6), 22-22. External link
Levesque, P. L., Sabri, S. S., Aguirre, C. M., Guillemette, J., Siaj, M., Desjardins, P., Szkopek, T., & Martel, R. (2011). Probing charge transfer at surfaces using graphene transistors. Nano Letters, 11(1), 132-137. External link
Levesque, P. L., Sabri, S. S., Aguirre, C. M., Guillemette, J., Siaj, M., Desjardins, P., Szkopek, T., & Martel, R. (2011). Probing Electrochemical Charge Transfer at Surfaces Using Graphene Transistors. ECS Meeting Abstracts, MA2011-01(39), 1868-1868. External link
Lapointe, F., Aguirre, C. M., Levesque, P. L., Desjardins, P., & Martel, R. (2011). Substrate Chemistry Modifies Carbon Nanotubes Field-Effect Transistors Transport Characteristics. ECS Meeting Abstracts, MA2011-01(34), 1747-1747. External link
Lévesque, A., Desjardins, P., Leonelli, R., & Masut, R. A. (2011). Temperature dependence of the photoluminescence spectra from InAs(P)/InP multilayers containing thick quantum dots: Dot-size-dependent carrier dynamics. Physical Review. B, Condensed Matter and Materials Physics, 83(23), 235304. External link
Lacroix, C., Lambert-Milot, S., Desjardins, P., Masut, R. A., & Ménard, D. (2009). Adjusting the magnetic properties of semiconductor epilayers by the crystallographic orientation of embedded highly anisotropic magnetic nanoclusters. Journal of Applied Physics, 105(7), 07-119. External link
Lacroix, C., Lambert-Milot, S., Desjardins, P., Masut, R. A., & Ménard, D. (2008). Magnetic Anisotropy in Gap(001) Epilayers Containing Mnp Nanoclusters Observed by Angle Dependent Ferromagnetic Resonance Measurements. Journal of Applied Physics, 103(7). External link
Lambert-Milot, S., Lacroix, C., Ménard, D., Masut, R. A., Desjardins, P., Garcia-Hernandez, M., & De Andres, A. (2008). Metal-Organic Vapor Phase Epitaxy of Crystallographically Oriented Mnp Magnetic Nanoclusters Embedded in Gap(001). Journal of Applied Physics, 104(8). External link
Lévesque, A., Shtinkov, N., Masut, R. A., & Desjardins, P. (2008). Self-Organization of InAs/InP Quantum Dot Multilayers: Pseudophase Diagram Describing the Transition From Aligned to Antialigned Structures. Physical Review Letters, 100(4). External link
Lacroix, C., Lambert-Milot, S., Desjardins, P., Masut, R. A., & Ménard, D. (2007, August). Magnetic anisotropy in GaP with embedded MnP nanoclusters [Paper]. 13th Canadian Semiconductor Technology Conference (CSTC 2007), Montréal, Québec. Unavailable
Lanacer, A., Shtinkov, N., Desjardins, P., Masut, R. A., & Leonelli, R. (2007). Optical Emission From InAs/InP Self-Assembled Quantum Dots: Evidence for As/P Intermixing. Semiconductor Science and Technology, 22(12), 1282-1286. External link
Lavoie, C., Coia, C., D'heurle, F. M., Detavernier, C., Cabral, C., Desjardins, P., & Kellock, A. J. (2004, July). Reactive Diffusion in the Ni-Si System: Phase Sequence and Formation of Metal-Rich Phases [Paper]. Diffusion in Materials: Dimat 2004 : 6th International Conference on Diffusion in Materials, Cracow, Poland. External link
Lavoie, C., Purtell, R., Coïa, C., Detavernier, C., Desjardins, P., Jordan-Sweet, J., Cabral, C. J., & D'Heurle, F. M. (2002, May). In situ monitoring of thin film reactions during rapid thermal annealing: nickel silicide formation [Paper]. Rapid thermal and other short-time processing technologies III Electrochemical Society, Philadelphia, PA, USA. External link
Lavoie, C., Meunier, M., Izquierdo, R., Boivin, S., & Desjardins, P. (1991). Large area excimer laser induced deposition of titanium from titanium tetrachloride. Applied Physics A Solids and Surfaces, 53(4), 339-342. External link
Lavoie, C., Meunier, M., Boivin, S., Izquierdo, R., & Desjardins, P. (1991). Profile of titanium lines produced by excimer laser direct writing on lithium niobate. Journal of Applied Physics, 70(4), 2343-2347. External link
Mukherjee, S., Nateghi, N., Jacobberger, R. M., Bouthillier, E., de la Mata, M., Arbiol, J., Coenen, T., Cardinal, D., Levesque, P., Desjardins, P., Martel, R., Arnold, M. S., & Moutanabbir, O. (2018). Growth and luminescence of polytypic InP on epitaxial graphene. Advanced Functional Materials, 28(8), 1705592. External link
Malikova, L., Pollak, F. H., Masut, R. A., Desjardins, P., & Mourokh, L. G. (2003). Temperature Dependent Contactless Electroreflectance Study of Intersubband Transitions in a Self-Assembled InAs/InP (001) Quantum Dot Structure. Journal of Applied Physics, 94(8), 4995-4998. External link
Meunier, M., Izquierdo, R., Tabbal, M., Evoy, S., Desjardins, P., Bernier, M.-H., Bertomeu, J., Elyaagoubi, N., Suys, M., Sacher, E., & Yelon, A. (1997). Laser induced deposition of tungsten and copper. Materials Science and Engineering. B, Solid-State Materials for Advanced Technology, 45(1-3), 200-207. External link
Marchand, H., Desjardins, P., Guillon, S., Paultre, J.-E., Bougrioua, Z., Yip, R. Y.-F., & Masut, R. A. (1997). Metalorganic vapor phase epitaxial growth and structural characterization of self-assembled InAs nanometer-sized islands on InP(001). Journal of Electronic Materials, 26(10), 1205-1213. External link
Meunier, M., Desjardins, P., Tabbal, M., Elyaagoubi, N., Izquierdo, R., & Yelon, A. (1995). Laser processing of tungsten from WF₆ and SiH₄. Applied Surface Science, 86(1), 475-483. External link
Meunier, M., Desjardins, P., Izquierdo, R., Tabbal, M., & Suys, M. (1994). Excimer laser for in situ processing in microelectronics. In Laude, L. D. (ed.), Excimer lasers : The tools, fundamentals of their interactions with matter, field of applications (pp. 319-338). External link
Meunier, M., Izquierdo, R., Desjardins, P., Tabbal, M., Lecours, A., & Yelon, A. (1992). Laser direct writing of tungsten from WF₆. Thin Solid Films, 218(1-2), 137-143. External link
Meunier, M., Lavoie, C., Boivin, S., Izquierdo, R., & Desjardins, P. (1992). Modeling KrF excimer laser induced deposition of titanium from titanium tetrachloride. Applied Surface Science, 54, 52-55. External link
Meunier, M., Lavoie, C., Boivin, S., Izquierdo, R., Desjardins, P., & Najafi, S. I. (1990, November). KrF excimer laser direct writing of titanium lines: modeling and application to the fabrication of Ti:Linbo₃ waveguides [Paper]. 1990 MRS Fall Meeting, Boston, Mass.. Published in MRS Proceedings, 201. External link
Nateghi, N., Samik, M., Cardinal, D., Jacobberger, R. M., Way, A. J., de la Mata, M., Martel, R., Desjardins, P., Arbiol, J., Arnold, M. S., & Moutanabbir, O. (2020). Van Der Waals Growth of III-V Semiconductors on Graphene. ECS Meeting Abstracts, MA2020-01(B06 : 2D L), 835-835. External link
Nateghi, N., Mukherjee, S., Choubak, S., Nguyen, M., Lévesque, P., Martel, R., Desjardins, P., & Moutanabbir, O. (2015, May). Growth of III-V semiconductors on silicon oxide/silicon using graphene interlayer [Poster]. 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec. Unavailable
Py-Renaudie, A., Daoust, P., Côté, M., Desjardins, P., & Masut, R. A. (2020). Ab initio piezoelectric properties of wurtzite ZnO-based alloys: Impact of the c/a cell ratio. Physical Review Materials, 4(5), 053601 (9 pages). External link
Pougoum, F., Martinu, L., Desjardins, P., Sapieha, J.-E., Gaudet, S., Savoie, S., & Schulz, R. (2016). Effect of high-energy ball-milling on the characteristics of Fe₃Al-based HVOF coatings containing boride and nitride phases. Wear, 358-359, 97-108. External link
Phaneuf-L'Heureux, A.-L., Favron, A., Germain, J.-F., Lavoie, P., Desjardins, P., Leonelli, R., Martel, R., & Francoeur, S. (2016). Polarization-Resolved Raman Study of Bulk-like and Davydov-Induced Vibrational Modes of Exfoliated Black Phosphorus. Nano Letters, 16(12), 7761-7767. External link
Perfetti, L., Kampfrath, T., Schapper, F., Hagen, A., Hertel, T., Aguirre, C. M., Desjardins, P., Martel, R., Frischkorn, C., & Wolf, M. (2006). Ultrafast Dynamics of Delocalized and Localized Electrons in Carbon Nanotubes. Physical Review Letters, 96(2). External link
Park, S. Y., D'Arcy-Gall, J., Gall, D., Kim, Y. W., Desjardins, P., & Greene, J. E. (2002). C Lattice Site Distributions in Metastable Ge₁₋yCy Alloys Grown on Ge(001) by Molecular-Beam Epitaxy. Journal of Applied Physics, 91(6), 3644-3652. External link
Park, S. Y., D'Arcy-Gall, J., Gall, D., Soares, J. A. N. T., Kim, Y.-W., Kim, H., Desjardins, P., Greene, J. E., & Bishop, S. G. (2002). Carbon Incorporation Pathways and Lattice Sites in Si₁₋yCy Alloys Grown on Si(001) by Molecular-Beam Epitaxy. Journal of Applied Physics, 91(9), 5716-5727. External link
Raymond, S., Labrie, D., Girard, J.-F., Poirier, S., Awirothananon, S., Poole, P. J., Marchand, H., Desjardins, P., & Masut, R. A. (2000, November). Tuning of the electronic properties of self-assembled InAs/InP quantum dots by rapid thermal annealing [Paper]. Semiconductor quantum dots II, Boston, USA. Unavailable
Rojas-López, M., Navarro-Contreras, H., Desjardins, P., Gurdal, O., Taylor, N., Carlsson, J. R. A., & Greene, J. E. (1998). Raman scattering from fully strained Ge1-xSnx (x<=0.22) alloys grown on Ge(001)2x1 by low-temperature molecular beam epitaxy. Journal of Applied Physics, 84(4), 2219-2223. External link
Simoneau, L.-P., Villeneuve, J., Aguirre, C. M., Martel, R., Desjardins, P., & Rochefort, A. (2013). Influence of statistical distributions on the electrical properties of disordered and aligned carbon nanotube networks. Journal of Applied Physics, 114(11), 8-8. External link
Shtinkov, N., Desjardins, P., Masut, R. A., & Côté, M. (2006). Nitrogen incorporation and lattice constant of strained dilute GaAs₁₋ₓNₓ layers on GaAs (001): an ab initio study. Physical Review. B, Condensed Matter and Materials Physics, 74(3), 035211 (8 pages). External link
Shtinkov, N., Turcotte, S., Beaudry, J. N., Desjardins, P., & Masut, R. A. (2004). Electronic and Optical Properties of Gaasn/Gaas Quantum Wells: a Tight-Binding Study. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(4), 1606-1609. External link
Shtinkov, N., Desjardins, P., Masut, R. A., & Vlaev, S. J. (2004). Lateral confinement and band mixing in ultrathin semiconductor quantum wells with steplike interfaces. Physical Review. B, Condensed Matter and Materials Physics, 70(15), 155302. External link
Shtinkiv, N., Desjardins, P., & Masut, R. A. (2004, July). Localized and extended states in semiconductor quantum wells with wire-like interface Islands [Paper]. 27th international conference on the physics of semiconductors, Flagstaff, Arizona, USA. External link
Spila, T., Desjardins, P., D'Arcy-Gall, J., Twesten, R. D., & Greene, J. E. (2003). Effect of steady-state hydrogen coverage on the evolution of crosshatch morphology during Si1-xGex/Si(001) growth from hybride precursors. Journal of Applied Physics, 93(4), 1918-1925. External link
Shtinkov, N., Desjardins, P., & Masut, R. A. (2003). Empirical tight-binding model for the electronic structure of dilute GaNAs alloys. Physical Review. B, Condensed Matter and Materials Physics, 67(8), 081202. External link
Shtinkov, N., Desjardins, P., & Masut, R. A. (2002, December). Lateral confinement of carriers in ultrathin semiconductor quantum wells [Paper]. 4th International Conference on Low Dimensional Structures and Devices (LDSD 2002), Fortaleza, Brazil. Published in Microelectronics Journal, 34(5-8). External link
Shtinkov, N., Desjardins, P., & Masut, R. A. (2002). Electronic states of ultrathin InAs/InP (001) quantum wells: a tight-binding study of the effects of band offset, strain, and intermixing. Physical Review. B, Condensed Matter and Materials Physics, 66(19), 195303 (8 pages). External link
Spila, T., Desjardins, P., Vailionis, A., Kim, H., Taylor, N., Cahill, D. G., Greene, J. E., Guillon, S., & Masut, R. A. (2002). Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si₀.₇ Ge₀.₃ layers on Si(001). Journal of Applied Physics, 91(6), 3579-3588. External link
Shin, C.-S., Gall, D., Kim, Y.-W., Desjardins, P., Petrov, I., Greene, J. E., Odén, M., & Hultman, L. (2001). Epitaxial NaCl-structure delta-TaNx(001): electronic transport properties, elastic modulus, and hardness vs. N/Ta ratio. Journal of Applied Physics, 90(6), 2879-2895. External link
Soares, J. A. N. T., Kim, H., Glass, G., Desjardins, P., & Greene, J. E. (1999). Arsenic-doped Si(001) gas-source molecular-beam epitaxy: Growth kinetics and transport properties. Applied Physics Letters, 74(9), 1290-1292. External link
Turcotte-Tremblay, P., Guihard, M., Gaudet, S., Chicoine, M., Lavoie, C., Desjardins, P., & Schiettekatte, F. (2013). Thin film Ni-Si solid-state reactions: Phase formation sequence on amorphized Si. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 31(5). External link
Turcotte, S., Beaudry, J.-N., Masut, R. A., Desjardins, P., Bentoumi, G., & Leonelli, R. (2012). Abnormal Broadening of the Optical Transitions in (Ga,As)N/GaAs Quantum Wells. Physical Review B, 85(3), 033304 (4 pages). External link
Turcotte, S., Larouche, S., Beaudry, J.-N., Martinu, L., Masut, R. A., Desjardins, P., & Leonelli, R. (2009). Evidence of valence band perturbations in GaAsN/GaAs(001): Combined variable-angle spectroscopic ellipsometry and modulated photoreflectance investigation. Physical Review B, 80(8). External link
Turcotte, S., Beaudry, J. N., Masut, R. A., Desjardins, P., Bentoumi, G., & Leonelli, R. (2008). Experimental Investigation of the Variation of the Absorption Coefficient With Nitrogen Content in GaasN and GaInAsN Grown on GaAs (001). Journal of Applied Physics, 104(8), 083511. External link
Timoshevskii, V., Côté, M., Gilbert, G., Leonelli, R., Turcotte, S., Beaudry, J. N., Desjardins, P., Larouche, S., Martinu, L., & Masut, R. A. (2006). Experimental and Theoretical Studies of the E+ Optical Transition in GaAsN Alloys. Physical Review B, 74(16). External link
Turcotte, S., Shtinkov, N., Desjardins, P., Masut, R. A., & Leonelli, R. (2004). Empirical Tight-Binding Calculations of the Electronic Structure of Dilute III-V-N Semiconductor Alloys. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(3), 776-780. External link
Tchebotareva, A., Brebner, J. L., Roorda, S., Desjardins, P., & White, C. W. (2002). Structural properties of InAs nanocrystals formed by sequential implantation of In and As ions in the Si (100) matrix. Journal of Applied Physics, 92(8), 4664-4671. External link
Taylor, N., Kim, H., Desjardins, P., Foo, Y. L., & Greene, J. E. (2000). Si(001)16x2 gas-source molecular-beam epitaxy: growth kinetics. Applied Physics Letters, 76(20), 2853-2855. External link
Taylor, N., Kim, H., Spila, T., Eades, J. A., Glass, G., Desjardins, P., & Greene, J. E. (1999). Growth of Si₁₋ₓGeₓ(011) on Si(011)16x2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions. Journal of Applied Physics, 85(1), 501-511. External link
Virgilio, N., Desjardins, P., L'Espérance, G., & Favis, B. D. (2010). Modified interfacial tensions measured in situ in ternary polymer blends demonstrating partial wetting. Polymer, 51(6), 1472-1484. External link
Virgilio, N., Desjardins, P., L'Espérance, G., & Favis, B. D. (2009). In situ measure of interfacial tensions in ternary and quaternary immiscible polymer blends demonstrating partial wetting. Macromolecules, 42(19), 7518-7529. External link
Virgilio, N., Desjardins, P., L'Espérance, G., & Favis, B. D. (2008, June). The Neumann triangle method to measure interfacial tensions in immiscible polymer blends using focused ion beam and atomic force microscopy [Paper]. 24th Annual meeting of Polymer Processing Society, Salerno, Italy. Unavailable
Virgilio, N., Desjardins, P., L'Espérance, G., & Favis, B. D. (2007, August). Novel self-assembling pearl necklace microstructure induced by partial wetting in ternary polymer blends [Abstract]. ACS Polymeric Materials: Science and Engineering. Fall Meeting 2007., Boston, Mass., USA. Unavailable
Virgilio, N., Pépin, M. F., Desjardins, P., L'Espérance, G., & Favis, B. D. (2005, August). High contrast imaging of interphases in ternary polymer blends using focused ion beam preparation and atomic force microscopy [Paper]. PPS 2005 America's Regional Meeting of the Polymer Processing Society, Québec, QC, Canada.. Unavailable
Virgilio, N., Favis, B. D., Pepin, M. F., Desjardins, P., & L'Espérance, G. (2005). High Contrast Imaging of Interphases in Ternary Polymer Blends Using Focused Ion Beam Preparation and Atomic Force Microscopy. Macromolecules, 38(6), 2368-2375. External link
Veres, T., Desjardins, P., Cochrane, R. W., Cai, M., Rouabhi, M., Cheng, L., Abdouche, R., & Sutton, M. (2001). Mev Si+ Irradiation of Fe/Ni Bilayers: Influence of Microstructural and Interfacial Changes on Magnetic Properties. Thin Solid Films, 382(1-2), 164-171. External link
Veres, T., Cai, M., Cochrane, R. W., Rouabhi, M., Roorda, S., & Desjardins, P. (2001). MeV Si+ irradiation of Ni/Fe multilayers: structural, transport, and magnetic properties. Thin Solid Films, 382(1-2), 172-182. External link
Vailionis, A., Cho, B., Glass, G., Desjardins, P., Cahill, D. G., & Greene, J. E. (2000). Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001). Physical Review Letters, 85(17), 3672-3675. External link
Wei, P., Chicoine, M., Gujrathi, S., Schiettekatte, F., Beaudry, J. N., Masut, R. A., & Desjardins, P. (2004). Characterization of GaAs₁₋ₓ Nₓ epitaxial layers by ion beam analysis. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(3), 908-911. External link
Yip, R. Y.-F., Desjardins, P., Isnard, L., Aït-Ouali, A., Bensaada, A., Marchand, H., Brebner, J. L., Currie, J. F., & Masut, R. A. (1998). Band alignment and barrier height considerations for the quantum-confined Stark effect. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 801-804. External link
Yip, R. Y.-F., Aït-Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. A. (1997). Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, 81(4), 1905-1915. External link
Zhang, Z., Yang, B., Zhu, Y., Gaudet, S., Rossnagel, S., Kellock, A. J., Ozcan, A., Murray, C., Desjardins, P., Zhang, S.-L., Jordan-Sweet, J., & Lavoie, C. (2010). Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1-xPtx silicide films. Applied Physics Letters, 97(25), 252108-252108. External link