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Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si₀.₇ Ge₀.₃ layers on Si(001)

T. Spila, Patrick Desjardins, A. Vailionis, H. Kim, N. Taylor, D. G. Cahill, J. E. Greene, S. Guillon and Rémo A. Masut

Article (2002)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/26277/
Journal Title: Journal of Applied Physics (vol. 91, no. 6)
Publisher: American Institute of Physics
DOI: 10.1063/1.1448680
Official URL: https://doi.org/10.1063/1.1448680
Date Deposited: 18 Apr 2023 15:21
Last Modified: 05 Apr 2024 11:13
Cite in APA 7: Spila, T., Desjardins, P., Vailionis, A., Kim, H., Taylor, N., Cahill, D. G., Greene, J. E., Guillon, S., & Masut, R. A. (2002). Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si₀.₇ Ge₀.₃ layers on Si(001). Journal of Applied Physics, 91(6), 3579-3588. https://doi.org/10.1063/1.1448680

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