Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si₀.₇ Ge₀.₃ layers on Si(001)

T. Spila, Patrick Desjardins, A. Vailionis, H. Kim, N. Taylor, D. G. Cahill, J. E. Greene, S. Guillon and Rémo A. Masut

Article (2002)

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Department:	Department of Engineering Physics
Research Center:	GCM - Thin Film Physics and Technology Research Group
PolyPublie URL:	https://publications.polymtl.ca/26277/
Journal Title:	Journal of Applied Physics (vol. 91, no. 6)
Publisher:	American Institute of Physics
DOI:	10.1063/1.1448680
Official URL:	https://doi.org/10.1063/1.1448680
Date Deposited:	18 Apr 2023 15:21
Last Modified:	08 Apr 2025 02:15

Cite in APA 7:	Spila, T., Desjardins, P., Vailionis, A., Kim, H., Taylor, N., Cahill, D. G., Greene, J. E., Guillon, S., & Masut, R. A. (2002). Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si₀.₇ Ge₀.₃ layers on Si(001). Journal of Applied Physics, 91(6), 3579-3588. https://doi.org/10.1063/1.1448680
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