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Desjardins, P., Spila, T., Gürdal, O., Taylor, N., & Greene, J. E. (1999). Hybrid surface roughening modes during low-temperature heteroepitaxy: Growth of fully-strained metastable Ge₁₋ₓSnₓ alloys on Ge(001)2*1. Physical review. B, Condensed matter, 60(23), 15933-15998. Lien externe
Glass, G., Kim, H., Desjardins, P., Taylor, N., Spila, T., Lu, Q., & Greene, J. E. (2000). Ultra-high B doping (< 10^22 cm-3) during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport. Physical review, 61(11), 7628-7644. Lien externe
Gurdal, O., Desjardins, P., Carlsson, J. R. A., Taylor, N., Radamson, H. H., Sundgren, J.-E., & Greene, J. E. (1998). Low-temperature growth and critical epitaxial thickness of fully-strained metastable Ge₁₋ₓSnₓ (x <0.26) alloys on Ge(001)2x1. Journal of Applied Physics, 83(1), 162-170. Lien externe
Rojas-López, M., Navarro-Contreras, H., Desjardins, P., Gurdal, O., Taylor, N., Carlsson, J. R. A., & Greene, J. E. (1998). Raman scattering from fully strained Ge1-xSnx (x<=0.22) alloys grown on Ge(001)2x1 by low-temperature molecular beam epitaxy. Journal of Applied Physics, 84(4), 2219-2223. Lien externe
Spila, T., Desjardins, P., Vailionis, A., Kim, H., Taylor, N., Cahill, D. G., Greene, J. E., Guillon, S., & Masut, R. A. (2002). Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si₀.₇ Ge₀.₃ layers on Si(001). Journal of Applied Physics, 91(6), 3579-3588. Lien externe
Taylor, N., Kim, H., Desjardins, P., Foo, Y. L., & Greene, J. E. (2000). Si(001)16x2 gas-source molecular-beam epitaxy: growth kinetics. Applied Physics Letters, 76(20), 2853-2855. Lien externe
Taylor, N., Kim, H., Spila, T., Eades, J. A., Glass, G., Desjardins, P., & Greene, J. E. (1999). Growth of Si₁₋ₓGeₓ(011) on Si(011)16x2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions. Journal of Applied Physics, 85(1), 501-511. Lien externe
