N. Taylor, H. Kim, T. Spila, J. A. Eades, G. Glass, Patrick Desjardins
and J. E. Greene
Article (1999)
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| Additional Information: | Nom historique du département: Département de génie physique et de génie des matériaux |
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| Department: | Department of Engineering Physics |
| PolyPublie URL: | https://publications.polymtl.ca/28559/ |
| Journal Title: | Journal of Applied Physics (vol. 85, no. 1) |
| Publisher: | American Institute of Physics |
| DOI: | 10.1063/1.369481 |
| Official URL: | https://doi.org/10.1063/1.369481 |
| Date Deposited: | 18 Apr 2023 15:22 |
| Last Modified: | 08 Apr 2025 02:18 |
| Cite in APA 7: | Taylor, N., Kim, H., Spila, T., Eades, J. A., Glass, G., Desjardins, P., & Greene, J. E. (1999). Growth of Si₁₋ₓGeₓ(011) on Si(011)16x2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions. Journal of Applied Physics, 85(1), 501-511. https://doi.org/10.1063/1.369481 |
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