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Growth of Si₁₋ₓGeₓ(011) on Si(011)16x2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions

N. Taylor, H. Kim, T. Spila, J. A. Eades, G. Glass, Patrick Desjardins and J. E. Greene

Article (1999)

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Additional Information: Nom historique du département: Département de génie physique et de génie des matériaux
Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/28559/
Journal Title: Journal of Applied Physics (vol. 85, no. 1)
Publisher: American Institute of Physics
DOI: 10.1063/1.369481
Official URL: https://doi.org/10.1063/1.369481
Date Deposited: 18 Apr 2023 15:22
Last Modified: 05 Apr 2024 11:16
Cite in APA 7: Taylor, N., Kim, H., Spila, T., Eades, J. A., Glass, G., Desjardins, P., & Greene, J. E. (1999). Growth of Si₁₋ₓGeₓ(011) on Si(011)16x2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions. Journal of Applied Physics, 85(1), 501-511. https://doi.org/10.1063/1.369481

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