Growth of Si₁₋ₓGeₓ(011) on Si(011)16x2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions

Taylor, N.; Kim, H.; Spila, T.; Eades, J. A.; Glass, G.; Desjardins, Patrick; Greene, J. E.; Taylor, N.; Kim, H.; Spila, T.; Eades, J. A.; Glass, G.; Desjardins, Patrick; Greene, J. E.

Growth of Si₁₋ₓGeₓ(011) on Si(011)16x2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions

N. Taylor, H. Kim, T. Spila, J. A. Eades, G. Glass, Patrick Desjardins , J. E. Greene

Article (1999)

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Nom historique du département: Département de génie physique et de génie des matériaux

Department:

Department of Engineering Physics

PolyPublie URL:

https://publications.polymtl.ca/28559/

Journal Title :

Journal of Applied Physics ( vol. 85 , no. 1 )

Publisher:

American Institute of Physics

DOI:

10.1063/1.369481

Official URL:

https://doi.org/10.1063/1.369481

OAI:

oai:publications.polymtl.ca:28559

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Date Deposited:

18 Apr 2023 15:22

Last Modified:

14 Oct 2026 13:05

Cite in APA 7:

Taylor, N., Kim, H., Spila, T., Eades, J. A., Glass, G., Desjardins, P., & Greene, J. E. (1999). Growth of Si₁₋ₓGeₓ(011) on Si(011)16x2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions. Journal of Applied Physics, 85(1), 501-511. https://doi.org/10.1063/1.369481

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