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Glass, G., Kim, H., Desjardins, P., Taylor, N., Spila, T., Lu, Q., & Greene, J. E. (2000). Ultra-high B doping (< 10^22 cm-3) during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport. Physical review, 61(11), 7628-7644. Lien externe
Kim, H., Glass, G., Soares, J. A. N. T., Desjardins, P., & Greene, J. E. (2001). Temperature-modulated Si(001): as gas-source molecular beam epitaxy: growth kinetics and As incorporation. Applied Physics Letters, 79(20), 3263-3265. Lien externe
Kim, H., Glass, G., Desjardins, P., & Greene, J. E. (2001). Ultra-High doped Si1-xGex(001):B gas-source molecular beam epitaxy: boron surface segregation and its effect on film growth kinetics. Journal of Applied Physics, 89(1), 194-205. Lien externe
Kim, H., Glass, G., Soares, J. A. N. T., Desjardins, P., & Greene, J. E. (2000). Arsenic incorporation during Si(001): As gas-source molecular-beam epitaxy from Si2H6 and AsH3: effects on film growth kinetics. Journal of Applied Physics, 88(12), 7067-7078. Lien externe
Soares, J. A. N. T., Kim, H., Glass, G., Desjardins, P., & Greene, J. E. (1999). Arsenic-doped Si(001) gas-source molecular-beam epitaxy: Growth kinetics and transport properties. Applied Physics Letters, 74(9), 1290-1292. Lien externe
Taylor, N., Kim, H., Spila, T., Eades, J. A., Glass, G., Desjardins, P., & Greene, J. E. (1999). Growth of Si₁₋ₓGeₓ(011) on Si(011)16x2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions. Journal of Applied Physics, 85(1), 501-511. Lien externe
Vailionis, A., Cho, B., Glass, G., Desjardins, P., Cahill, D. G., & Greene, J. E. (2000). Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001). Physical Review Letters, 85(17), 3672-3675. Lien externe
