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Ultra-High doped Si1-xGex(001):B gas-source molecular beam epitaxy: boron surface segregation and its effect on film growth kinetics

H. Kim, G. Glass, Patrick Desjardins and J. E. Greene

Article (2001)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/27303/
Journal Title: Journal of Applied Physics (vol. 89, no. 1)
Publisher: American Institute of Physics
DOI: 10.1063/1.1330244
Official URL: https://doi.org/10.1063/1.1330244
Date Deposited: 18 Apr 2023 15:21
Last Modified: 05 Apr 2024 11:14
Cite in APA 7: Kim, H., Glass, G., Desjardins, P., & Greene, J. E. (2001). Ultra-High doped Si1-xGex(001):B gas-source molecular beam epitaxy: boron surface segregation and its effect on film growth kinetics. Journal of Applied Physics, 89(1), 194-205. https://doi.org/10.1063/1.1330244

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