Ultra-High doped Si1-xGex(001):B gas-source molecular beam epitaxy: boron surface segregation and its effect on film growth kinetics

H. Kim, G. Glass, Patrick Desjardins and J. E. Greene

Article (2001)

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Department:	Department of Engineering Physics
PolyPublie URL:	https://publications.polymtl.ca/27303/
Journal Title:	Journal of Applied Physics (vol. 89, no. 1)
Publisher:	American Institute of Physics
DOI:	10.1063/1.1330244
Official URL:	https://doi.org/10.1063/1.1330244
Date Deposited:	18 Apr 2023 15:21
Last Modified:	08 Apr 2025 02:16

Cite in APA 7:	Kim, H., Glass, G., Desjardins, P., & Greene, J. E. (2001). Ultra-High doped Si1-xGex(001):B gas-source molecular beam epitaxy: boron surface segregation and its effect on film growth kinetics. Journal of Applied Physics, 89(1), 194-205. https://doi.org/10.1063/1.1330244
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