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Bratland, K. A., Spila, T., Cahill, D. G., Greene, J. E., & Desjardins, P. (2011). Continuum model of surface roughening and epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy. Journal of Applied Physics, 109(6). Lien externe
Bratland, K. A., Foo, Y. L., Soares, J., Spila, T., Desjardins, P., & Greene, J. E. (2003). Mechanism for Epitaxial Breakdown During Low-Temperature Ge(001) Molecular Beam Epitaxy. Physical Review. B, Condensed Matter and Materials Physics, 67(12), 125322-125322. Lien externe
Bratland, K. A., Foo, Y. L., Desjardins, P., & Greene, J. E. (2003). Sn-enhanced epitaxial thickness during low-temperature Ge(001) molecular beam epitaxy. Applied Physics Letters, 82(24), 4247-4247. Lien externe
Chun, J. S., Desjardins, P., Lavoie, C., Petrov, I., Cabral, C., & Greene, J. E. (2001). Interfacial Reaction Pathways and Kinetics During Annealing of 111-Textured Al-Tin Bilayers: a Synchrotron X-Ray Diffraction and Transmission Electron Microscopy Study. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 19(5), 2207-2216. Lien externe
Chun, J.-S., Desjardins, P., Petrov, I., Greene, J. E., Lavoie, C., & Cabral, C. J. (2001). Interfacial reaction pathways and kinetics during annealing of epitaxial Al(001)/TiN(001) model diffusion barrier systems. Thin Solid Films, 391(1), 69-80. Lien externe
Chun, J. S., Desjardins, P., Lavoie, C., Shin, C. S., Cabral, C., Petrov, I., & Greene, J. E. (2001). Interfacial Reactions in Epitaxial Al/Tin(111) Model Diffusion Barriers: Formation of an Impervious Self-Limited Wurtzite- Structure Aln(0001) Blocking Layer. Journal of Applied Physics, 89(12), 7841-7845. Lien externe
Chun, J.-S., Carlsson, J. R. A., Desjardins, P., Bergstrom, D. B., Petrov, I., Greene, J. E., Lavoie, C., & Cabral, C. (2001). Synchrotron x-ray diffraction and transmission electon microscopy studies of interfacial reaction paths and kinetics annealing of fully-002-textured Al/TiN bilayers. Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 19(1), 182-191. Lien externe
D'Arcy-Gall, J., Gall, D., Petrov, I., Desjardins, P., & Greene, J. E. (2001). Quantitative C lattice site distributions in epitaxial Ge1-yCy/Ge(001) layers. Journal of Applied Physics, 90(8), 3910-3918. Lien externe
D'arcy Gall, J., Desjardins, P., Petrov, I., Greene, J. E., Paultre, J. E., Masut, R. A., Gujrathi, S. C., & Roorda, S. (2000). Epitaxial metastable Ge₁₋y Cy (y≤0.02) alloys grown on Ge(001) from hyperthermal beams: C incorporation and lattice sites. Journal of Applied Physics, 88(1), 96-104. Lien externe
Desjardins, P., Spila, T., Gürdal, O., Taylor, N., & Greene, J. E. (1999). Hybrid surface roughening modes during low-temperature heteroepitaxy: Growth of fully-strained metastable Ge₁₋ₓSnₓ alloys on Ge(001)2*1. Physical review. B, Condensed matter, 60(23), 15933-15998. Lien externe
Desjardins, P., & Greene, J. E. (1996). Step-flow epitaxial growth on two-domain surfaces. Journal of Applied Physics, 79(3), 1423-1434. Lien externe
Foo, Y. L., Bratland, K. A., Cho, B., Desjardins, P., & Greene, J. E. (2003). Si₁₋yCy/Si(001) gas-source molecular beam epitaxy from Si₂H₆ and CH₃SiH₃: surface reaction paths and growth kinetics. Journal of Applied Physics, 93(7), 3944-3950. Lien externe
Foo, Y. L., Bratland, K. A., Cho, B., Soares, J. A. N. T., Desjardins, P., & Greene, J. E. (2002). C incorporation and segregation during Si₁₋yCy/Si(001) gas-source molecular beam epitaxy from Si₂H₆ and CH₃SiH₃. Surface Science, 513(3), 475-484. Lien externe
Gall, D., Städele, M., Jarrendahl, K., Petrov, I., Desjardins, P., Haasch, R. T., Lee, T.-Y., & Greene, J. E. (2001). Electronic structure of ScN determined using optical spectroscopy, photoemission, andabinitio calculations. Physical review, 63(12). Lien externe
Glass, G., Kim, H., Desjardins, P., Taylor, N., Spila, T., Lu, Q., & Greene, J. E. (2000). Ultra-high B doping (< 10^22 cm-3) during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport. Physical review, 61(11), 7628-7644. Lien externe
Gurdal, O., Desjardins, P., Carlsson, J. R. A., Taylor, N., Radamson, H. H., Sundgren, J.-E., & Greene, J. E. (1998). Low-temperature growth and critical epitaxial thickness of fully-strained metastable Ge₁₋ₓSnₓ (x <0.26) alloys on Ge(001)2x1. Journal of Applied Physics, 83(1), 162-170. Lien externe
Gujrathi, S. C., Roorda, S., D'Arcy, J. G., Pflueger, R. L., Desjardins, P., Petrov, I., & Greene, J. E. (1998). Quantitative compositional depth profiling of Si₁₋ₓ₋yGeₓCy thin films by simultaneous elastic recoil detection and Rutherford backscattering spectrometry. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 136-138, 654-660. Lien externe
Kim, H., Glass, G., Soares, J. A. N. T., Desjardins, P., & Greene, J. E. (2001). Temperature-modulated Si(001): as gas-source molecular beam epitaxy: growth kinetics and As incorporation. Applied Physics Letters, 79(20), 3263-3265. Lien externe
Kodambaka, S., Petrova, V., Vailionis, A., Desjardins, P., Cahill, D. G., Petrov, I., & Greene, J. E. (2001). TiN(001) and TiN(111) island coarsening kinetics: In-situ scanning tunneling microscopy studies. Thin Solid Films, 392(2), 164-168. Lien externe
Kim, H., Glass, G., Desjardins, P., & Greene, J. E. (2001). Ultra-High doped Si1-xGex(001):B gas-source molecular beam epitaxy: boron surface segregation and its effect on film growth kinetics. Journal of Applied Physics, 89(1), 194-205. Lien externe
Kim, H., Glass, G., Soares, J. A. N. T., Desjardins, P., & Greene, J. E. (2000). Arsenic incorporation during Si(001): As gas-source molecular-beam epitaxy from Si2H6 and AsH3: effects on film growth kinetics. Journal of Applied Physics, 88(12), 7067-7078. Lien externe
Kodambaka, S., Petrova, V., Vailionis, P., Desjardins, P., Cahill, D. G., Petrov, I., & Greene, J. E. (2000). In-situ high-temperature scanning tunneling microscopy studies of two-dimensional island decay kinetics on atomically flat smooth TiN(001). Surface Review and Letters, 7(05n06), 589-593. Lien externe
Kim, H., Desjardins, P., Abelson, J. R., & Greene, J. E. (1998). Pathways for hydrogen desorption from Si₁₋ₓGeₓ(001) during gas-source molecular-beam epitaxy and ultrahigh-vacuum chemical vapor deposition. Physical review. B, Condensed matter, 58(8), 4803-4808. Lien externe
Karr, B. W., Petrov, I., Desjardins, P., Cahill, D. G., & Greene, J. E. (1997). In situ scanning tunneling microscopy studies of the evolution of surface morphology ans microstructure in epitaxial TiN(001) grown by ultra-high-vacuum reactive magnetron sputtering. Surface and Coatings Technology, 94-95, 403-408. Lien externe
Park, S. Y., D'Arcy-Gall, J., Gall, D., Kim, Y. W., Desjardins, P., & Greene, J. E. (2002). C Lattice Site Distributions in Metastable Ge₁₋yCy Alloys Grown on Ge(001) by Molecular-Beam Epitaxy. Journal of Applied Physics, 91(6), 3644-3652. Lien externe
Park, S. Y., D'Arcy-Gall, J., Gall, D., Soares, J. A. N. T., Kim, Y.-W., Kim, H., Desjardins, P., Greene, J. E., & Bishop, S. G. (2002). Carbon Incorporation Pathways and Lattice Sites in Si₁₋yCy Alloys Grown on Si(001) by Molecular-Beam Epitaxy. Journal of Applied Physics, 91(9), 5716-5727. Lien externe
Rojas-López, M., Navarro-Contreras, H., Desjardins, P., Gurdal, O., Taylor, N., Carlsson, J. R. A., & Greene, J. E. (1998). Raman scattering from fully strained Ge1-xSnx (x<=0.22) alloys grown on Ge(001)2x1 by low-temperature molecular beam epitaxy. Journal of Applied Physics, 84(4), 2219-2223. Lien externe
Spila, T., Desjardins, P., D'Arcy-Gall, J., Twesten, R. D., & Greene, J. E. (2003). Effect of steady-state hydrogen coverage on the evolution of crosshatch morphology during Si1-xGex/Si(001) growth from hybride precursors. Journal of Applied Physics, 93(4), 1918-1925. Lien externe
Spila, T., Desjardins, P., Vailionis, A., Kim, H., Taylor, N., Cahill, D. G., Greene, J. E., Guillon, S., & Masut, R. A. (2002). Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si₀.₇ Ge₀.₃ layers on Si(001). Journal of Applied Physics, 91(6), 3579-3588. Lien externe
Shin, C.-S., Gall, D., Kim, Y.-W., Desjardins, P., Petrov, I., Greene, J. E., Odén, M., & Hultman, L. (2001). Epitaxial NaCl-structure delta-TaNx(001): electronic transport properties, elastic modulus, and hardness vs. N/Ta ratio. Journal of Applied Physics, 90(6), 2879-2895. Lien externe
Soares, J. A. N. T., Kim, H., Glass, G., Desjardins, P., & Greene, J. E. (1999). Arsenic-doped Si(001) gas-source molecular-beam epitaxy: Growth kinetics and transport properties. Applied Physics Letters, 74(9), 1290-1292. Lien externe
Taylor, N., Kim, H., Desjardins, P., Foo, Y. L., & Greene, J. E. (2000). Si(001)16x2 gas-source molecular-beam epitaxy: growth kinetics. Applied Physics Letters, 76(20), 2853-2855. Lien externe
Taylor, N., Kim, H., Spila, T., Eades, J. A., Glass, G., Desjardins, P., & Greene, J. E. (1999). Growth of Si₁₋ₓGeₓ(011) on Si(011)16x2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions. Journal of Applied Physics, 85(1), 501-511. Lien externe
Vailionis, A., Cho, B., Glass, G., Desjardins, P., Cahill, D. G., & Greene, J. E. (2000). Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001). Physical Review Letters, 85(17), 3672-3675. Lien externe
