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Raman scattering from fully strained Ge1-xSnx (x<=0.22) alloys grown on Ge(001)2x1 by low-temperature molecular beam epitaxy

M. Rojas-López, H. Navarro-Contreras, Patrick Desjardins, O. Gurdal, N. Taylor, J. R. A. Carlsson and J. E. Greene

Article (1998)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/29362/
Journal Title: Journal of Applied Physics (vol. 84, no. 4)
Publisher: American Institute of Physics
DOI: 10.1063/1.368286
Official URL: https://doi.org/10.1063/1.368286
Date Deposited: 18 Apr 2023 15:23
Last Modified: 05 Apr 2024 11:18
Cite in APA 7: Rojas-López, M., Navarro-Contreras, H., Desjardins, P., Gurdal, O., Taylor, N., Carlsson, J. R. A., & Greene, J. E. (1998). Raman scattering from fully strained Ge1-xSnx (x<=0.22) alloys grown on Ge(001)2x1 by low-temperature molecular beam epitaxy. Journal of Applied Physics, 84(4), 2219-2223. https://doi.org/10.1063/1.368286

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