J. A. N. T. Soares, H. Kim, G. Glass, Patrick Desjardins
and J. E. Greene
Article (1999)
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| Additional Information: | Nom historique du département: Département de génie physique et de génie des matériaux |
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| Department: | Department of Engineering Physics |
| PolyPublie URL: | https://publications.polymtl.ca/28580/ |
| Journal Title: | Applied Physics Letters (vol. 74, no. 9) |
| Publisher: | American Institute of Physics |
| DOI: | 10.1063/1.123527 |
| Official URL: | https://doi.org/10.1063/1.123527 |
| Date Deposited: | 18 Apr 2023 15:22 |
| Last Modified: | 08 Apr 2025 02:18 |
| Cite in APA 7: | Soares, J. A. N. T., Kim, H., Glass, G., Desjardins, P., & Greene, J. E. (1999). Arsenic-doped Si(001) gas-source molecular-beam epitaxy: Growth kinetics and transport properties. Applied Physics Letters, 74(9), 1290-1292. https://doi.org/10.1063/1.123527 |
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