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Arsenic-doped Si(001) gas-source molecular-beam epitaxy: Growth kinetics and transport properties

J. A. N. T. Soares, H. Kim, G. Glass, Patrick Desjardins and J. E. Greene

Article (1999)

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Additional Information: Nom historique du département: Département de génie physique et de génie des matériaux
Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/28580/
Journal Title: Applied Physics Letters (vol. 74, no. 9)
Publisher: American Institute of Physics
DOI: 10.1063/1.123527
Official URL: https://doi.org/10.1063/1.123527
Date Deposited: 18 Apr 2023 15:22
Last Modified: 05 Apr 2024 11:16
Cite in APA 7: Soares, J. A. N. T., Kim, H., Glass, G., Desjardins, P., & Greene, J. E. (1999). Arsenic-doped Si(001) gas-source molecular-beam epitaxy: Growth kinetics and transport properties. Applied Physics Letters, 74(9), 1290-1292. https://doi.org/10.1063/1.123527

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