A. Vailionis, B. Cho, G. Glass, Patrick Desjardins
, D. G. Cahill and J. E. Greene
Article (2000)
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| Additional Information: | Nom historique du département: Département de génie physique et de génie des matériaux |
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| Department: | Department of Engineering Physics |
| PolyPublie URL: | https://publications.polymtl.ca/27771/ |
| Journal Title: | Physical Review Letters (vol. 85, no. 17) |
| Publisher: | American Physical Society |
| DOI: | 10.1103/physrevlett.85.3672 |
| Official URL: | https://doi.org/10.1103/physrevlett.85.3672 |
| Date Deposited: | 18 Apr 2023 15:22 |
| Last Modified: | 08 Apr 2025 02:17 |
| Cite in APA 7: | Vailionis, A., Cho, B., Glass, G., Desjardins, P., Cahill, D. G., & Greene, J. E. (2000). Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001). Physical Review Letters, 85(17), 3672-3675. https://doi.org/10.1103/physrevlett.85.3672 |
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