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Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001)

A. Vailionis, B. Cho, G. Glass, Patrick Desjardins, D. G. Cahill and J. E. Greene

Article (2000)

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Additional Information: Nom historique du département: Département de génie physique et de génie des matériaux
Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/27771/
Journal Title: Physical Review Letters (vol. 85, no. 17)
Publisher: American Physical Society
DOI: 10.1103/physrevlett.85.3672
Official URL: https://doi.org/10.1103/physrevlett.85.3672
Date Deposited: 18 Apr 2023 15:22
Last Modified: 05 Apr 2024 11:15
Cite in APA 7: Vailionis, A., Cho, B., Glass, G., Desjardins, P., Cahill, D. G., & Greene, J. E. (2000). Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001). Physical Review Letters, 85(17), 3672-3675. https://doi.org/10.1103/physrevlett.85.3672

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