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Collaboration networkThis graph maps the connections between all the collaborators of {}'s publications listed on this page.
Each link represents a collaboration on the same publication. The thickness of the link represents the number of collaborations.
Use the mouse wheel or scroll gestures to zoom into the graph.
You can click on the nodes and links to highlight them and move the nodes by dragging them.
Hold down the "Ctrl" key or the "⌘" key while clicking on the nodes to open the list of this person's publications.
Word cloudA word cloud is a visual representation of the most frequently used words in a text or a set of texts. The words appear in different sizes, with the size of each word being proportional to its frequency of occurrence in the text. The more frequently a word is used, the larger it appears in the word cloud. This technique allows for a quick visualization of the most important themes and concepts in a text.
In the context of this page, the word cloud was generated from the publications of the author {}. The words in this cloud come from the titles, abstracts, and keywords of the author's articles and research papers. By analyzing this word cloud, you can get an overview of the most recurring and significant topics and research areas in the author's work.
The word cloud is a useful tool for identifying trends and main themes in a corpus of texts, thus facilitating the understanding and analysis of content in a visual and intuitive way.
Foo, Y. L., Bratland, K. A., Cho, B., Desjardins, P., & Greene, J. E. (2003). Si₁₋yCy/Si(001) gas-source molecular beam epitaxy from Si₂H₆ and CH₃SiH₃: surface reaction paths and growth kinetics. Journal of Applied Physics, 93(7), 3944-3950. External link
Foo, Y. L., Bratland, K. A., Cho, B., Soares, J. A. N. T., Desjardins, P., & Greene, J. E. (2002). C incorporation and segregation during Si₁₋yCy/Si(001) gas-source molecular beam epitaxy from Si₂H₆ and CH₃SiH₃. Surface Science, 513(3), 475-484. External link
Vailionis, A., Cho, B., Glass, G., Desjardins, P., Cahill, D. G., & Greene, J. E. (2000). Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001). Physical Review Letters, 85(17), 3672-3675. External link
