Y. L. Foo, K. A. Bratland, B. Cho, J. A. N. T. Soares, Patrick Desjardins
and J. E. Greene
Article (2002)
An external link is available for this item
| Department: | Department of Engineering Physics |
|---|---|
| PolyPublie URL: | https://publications.polymtl.ca/26650/ |
| Journal Title: | Surface Science (vol. 513, no. 3) |
| Publisher: | Elsevier |
| DOI: | 10.1016/s0039-6028(02)01821-6 |
| Official URL: | https://doi.org/10.1016/s0039-6028%2802%2901821-6 |
| Date Deposited: | 18 Apr 2023 15:20 |
| Last Modified: | 08 Apr 2025 02:15 |
| Cite in APA 7: | Foo, Y. L., Bratland, K. A., Cho, B., Soares, J. A. N. T., Desjardins, P., & Greene, J. E. (2002). C incorporation and segregation during Si₁₋yCy/Si(001) gas-source molecular beam epitaxy from Si₂H₆ and CH₃SiH₃. Surface Science, 513(3), 475-484. https://doi.org/10.1016/s0039-6028%2802%2901821-6 |
|---|---|
Statistics
Dimensions
Repository Staff Only
|
View Item |
