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C incorporation and segregation during Si₁₋yCy/Si(001) gas-source molecular beam epitaxy from Si₂H₆ and CH₃SiH₃

Y. L. Foo, K. A. Bratland, B. Cho, J. A. N. T. Soares, Patrick Desjardins and J. E. Greene

Article (2002)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/26650/
Journal Title: Surface Science (vol. 513, no. 3)
Publisher: Elsevier
DOI: 10.1016/s0039-6028(02)01821-6
Official URL: https://doi.org/10.1016/s0039-6028%2802%2901821-6
Date Deposited: 18 Apr 2023 15:20
Last Modified: 05 Apr 2024 11:13
Cite in APA 7: Foo, Y. L., Bratland, K. A., Cho, B., Soares, J. A. N. T., Desjardins, P., & Greene, J. E. (2002). C incorporation and segregation during Si₁₋yCy/Si(001) gas-source molecular beam epitaxy from Si₂H₆ and CH₃SiH₃. Surface Science, 513(3), 475-484. https://doi.org/10.1016/s0039-6028%2802%2901821-6

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