Y. L. Foo, K. A. Bratland, B. Cho, Patrick Desjardins
and J. E. Greene
Article (2003)
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| Department: | Department of Engineering Physics |
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| PolyPublie URL: | https://publications.polymtl.ca/25910/ |
| Journal Title: | Journal of Applied Physics (vol. 93, no. 7) |
| Publisher: | American Institute of Physics |
| DOI: | 10.1063/1.1555704 |
| Official URL: | https://doi.org/10.1063/1.1555704 |
| Date Deposited: | 18 Apr 2023 15:19 |
| Last Modified: | 08 Apr 2025 02:14 |
| Cite in APA 7: | Foo, Y. L., Bratland, K. A., Cho, B., Desjardins, P., & Greene, J. E. (2003). Si₁₋yCy/Si(001) gas-source molecular beam epitaxy from Si₂H₆ and CH₃SiH₃: surface reaction paths and growth kinetics. Journal of Applied Physics, 93(7), 3944-3950. https://doi.org/10.1063/1.1555704 |
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