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Si₁₋yCy/Si(001) gas-source molecular beam epitaxy from Si₂H₆ and CH₃SiH₃: surface reaction paths and growth kinetics

Y. L. Foo, K. A. Bratland, B. Cho, Patrick Desjardins and J. E. Greene

Article (2003)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/25910/
Journal Title: Journal of Applied Physics (vol. 93, no. 7)
Publisher: American Institute of Physics
DOI: 10.1063/1.1555704
Official URL: https://doi.org/10.1063/1.1555704
Date Deposited: 18 Apr 2023 15:19
Last Modified: 05 Apr 2024 11:12
Cite in APA 7: Foo, Y. L., Bratland, K. A., Cho, B., Desjardins, P., & Greene, J. E. (2003). Si₁₋yCy/Si(001) gas-source molecular beam epitaxy from Si₂H₆ and CH₃SiH₃: surface reaction paths and growth kinetics. Journal of Applied Physics, 93(7), 3944-3950. https://doi.org/10.1063/1.1555704

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