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Carbon Incorporation Pathways and Lattice Sites in Si₁₋yCy Alloys Grown on Si(001) by Molecular-Beam Epitaxy

S. Y. Park, J. D'Arcy-Gall, D. Gall, J. A. N. T. Soares, Y.-W. Kim, H. Kim, Patrick Desjardins, J. E. Greene and S. G. Bishop

Article (2002)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/26385/
Journal Title: Journal of Applied Physics (vol. 91, no. 9)
Publisher: American Institute of Physics
DOI: 10.1063/1.1465122
Official URL: https://doi.org/10.1063/1.1465122
Date Deposited: 18 Apr 2023 15:20
Last Modified: 05 Apr 2024 11:13
Cite in APA 7: Park, S. Y., D'Arcy-Gall, J., Gall, D., Soares, J. A. N. T., Kim, Y.-W., Kim, H., Desjardins, P., Greene, J. E., & Bishop, S. G. (2002). Carbon Incorporation Pathways and Lattice Sites in Si₁₋yCy Alloys Grown on Si(001) by Molecular-Beam Epitaxy. Journal of Applied Physics, 91(9), 5716-5727. https://doi.org/10.1063/1.1465122

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