Documents dont l'auteur est "D'Arcy-Gall, J."

D

D'Arcy-Gall, J., Gall, D., Petrov, I., Desjardins, P., & Greene, J. E. (2001). Quantitative C lattice site distributions in epitaxial Ge1-yCy/Ge(001) layers. Journal of Applied Physics, 90(8), 3910-3918. Lien externe

D'Arcy-Gall, J., Gall, D., Desjardins, P., & Petrov, I. (2000). Role of fast sputtered particles during sputter deposition: growth of epitaxial Ge0.99C0.01/Ge(001). Physical review. B, Condensed matter, 62(16), 11203-11208. Lien externe

P

Park, S. Y., D'Arcy-Gall, J., Gall, D., Kim, Y. W., Desjardins, P., & Greene, J. E. (2002). C Lattice Site Distributions in Metastable Ge₁₋yCy Alloys Grown on Ge(001) by Molecular-Beam Epitaxy. Journal of Applied Physics, 91(6), 3644-3652. Lien externe

Park, S. Y., D'Arcy-Gall, J., Gall, D., Soares, J. A. N. T., Kim, Y.-W., Kim, H., Desjardins, P., Greene, J. E., & Bishop, S. G. (2002). Carbon Incorporation Pathways and Lattice Sites in Si₁₋yCy Alloys Grown on Si(001) by Molecular-Beam Epitaxy. Journal of Applied Physics, 91(9), 5716-5727. Lien externe

S

Spila, T., Desjardins, P., D'Arcy-Gall, J., Twesten, R. D., & Greene, J. E. (2003). Effect of steady-state hydrogen coverage on the evolution of crosshatch morphology during Si1-xGex/Si(001) growth from hybride precursors. Journal of Applied Physics, 93(4), 1918-1925. Lien externe