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Ultra-high B doping (< 10^22 cm-3) during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport

G. Glass, H. Kim, Patrick Desjardins, N. Taylor, T. Spila, Q. Lu and J. E. Greene

Article (2000)

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Additional Information: Nom historique du département: Département de génie physique et de génie des matériaux
Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/28155/
Journal Title: Physical review (vol. 61, no. 11)
Publisher: American Physical Society
DOI: 10.1103/physrevb.61.7628
Official URL: https://doi.org/10.1103/physrevb.61.7628
Date Deposited: 18 Apr 2023 15:21
Last Modified: 05 Apr 2024 11:16
Cite in APA 7: Glass, G., Kim, H., Desjardins, P., Taylor, N., Spila, T., Lu, Q., & Greene, J. E. (2000). Ultra-high B doping (< 10^22 cm-3) during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport. Physical review, 61(11), 7628-7644. https://doi.org/10.1103/physrevb.61.7628

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