Ultra-high B doping (< 10^22 cm-3) during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport

G. Glass, H. Kim, Patrick Desjardins, N. Taylor, T. Spila, Q. Lu and J. E. Greene

Article (2000)

An external link is available for this item

Additional Information:	Nom historique du département: Département de génie physique et de génie des matériaux
Department:	Department of Engineering Physics
PolyPublie URL:	https://publications.polymtl.ca/28155/
Journal Title:	Physical review (vol. 61, no. 11)
Publisher:	American Physical Society
DOI:	10.1103/physrevb.61.7628
Official URL:	https://doi.org/10.1103/physrevb.61.7628
Date Deposited:	18 Apr 2023 15:21
Last Modified:	08 Apr 2025 02:17

Cite in APA 7:	Glass, G., Kim, H., Desjardins, P., Taylor, N., Spila, T., Lu, Q., & Greene, J. E. (2000). Ultra-high B doping (< 10^22 cm-3) during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport. Physical review, 61(11), 7628-7644. https://doi.org/10.1103/physrevb.61.7628
APA 7 (HTML)ASCII CitationAtomBibTeXDOIsDublin CoreEndNote (.ENW)MARC (ISO 2709/UTF-8) (.MRC)MARC (UTF-8) (.MRK8)MARC XMLMPEG-21 DIDLMultiline CSVOAI-ORE Resource Map (Atom Format)OPENAIREOpenURL ContextObjectOpenURL ContextObject in SpanRDF+N-TriplesRDF+N3RDF+XMLReferReference Manager (.RIS)Simple Metadata

Statistics

Dimensions

Repository Staff Only

View Item