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This graph maps the connections between all the collaborators of {}'s publications listed on this page.
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A word cloud is a visual representation of the most frequently used words in a text or a set of texts. The words appear in different sizes, with the size of each word being proportional to its frequency of occurrence in the text. The more frequently a word is used, the larger it appears in the word cloud. This technique allows for a quick visualization of the most important themes and concepts in a text.
In the context of this page, the word cloud was generated from the publications of the author {}. The words in this cloud come from the titles, abstracts, and keywords of the author's articles and research papers. By analyzing this word cloud, you can get an overview of the most recurring and significant topics and research areas in the author's work.
The word cloud is a useful tool for identifying trends and main themes in a corpus of texts, thus facilitating the understanding and analysis of content in a visual and intuitive way.
Bratland, K. A., Spila, T., Cahill, D. G., Greene, J. E., & Desjardins, P. (2011). Continuum model of surface roughening and epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy. Journal of Applied Physics, 109(6), 5 pages. External link
Bratland, K. A., Foo, Y. L., Soares, J., Spila, T., Desjardins, P., & Greene, J. E. (2003). Mechanism for Epitaxial Breakdown During Low-Temperature Ge(001) Molecular Beam Epitaxy. Physical Review. B, Condensed Matter and Materials Physics, 67(12), 125322-125322. External link
Desjardins, P., Spila, T., Gürdal, O., Taylor, N., & Greene, J. E. (1999). Hybrid surface roughening modes during low-temperature heteroepitaxy: Growth of fully-strained metastable Ge₁₋ₓSnₓ alloys on Ge(001)2*1. Physical review. B, Condensed matter, 60(23), 15933-15998. External link
Glass, G., Kim, H., Desjardins, P., Taylor, N., Spila, T., Lu, Q., & Greene, J. E. (2000). Ultra-high B doping (< 10^22 cm-3) during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport. Physical review, 61(11), 7628-7644. External link
Spila, T., Desjardins, P., D'Arcy-Gall, J., Twesten, R. D., & Greene, J. E. (2003). Effect of steady-state hydrogen coverage on the evolution of crosshatch morphology during Si1-xGex/Si(001) growth from hybride precursors. Journal of Applied Physics, 93(4), 1918-1925. External link
Spila, T., Desjardins, P., Vailionis, A., Kim, H., Taylor, N., Cahill, D. G., Greene, J. E., Guillon, S., & Masut, R. A. (2002). Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si₀.₇ Ge₀.₃ layers on Si(001). Journal of Applied Physics, 91(6), 3579-3588. External link
Taylor, N., Kim, H., Spila, T., Eades, J. A., Glass, G., Desjardins, P., & Greene, J. E. (1999). Growth of Si₁₋ₓGeₓ(011) on Si(011)16x2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions. Journal of Applied Physics, 85(1), 501-511. External link