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Si(001)16x2 gas-source molecular-beam epitaxy: growth kinetics

N. Taylor, H. Kim, Patrick Desjardins, Y. L. Foo and J. E. Greene

Article (2000)

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Additional Information: Nom historique du département: Département de génie physique et de génie des matériaux
Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/27815/
Journal Title: Applied Physics Letters (vol. 76, no. 20)
Publisher: American Institute of Physics
DOI: 10.1063/1.126495
Official URL: https://doi.org/10.1063/1.126495
Date Deposited: 18 Apr 2023 15:22
Last Modified: 05 Apr 2024 11:15
Cite in APA 7: Taylor, N., Kim, H., Desjardins, P., Foo, Y. L., & Greene, J. E. (2000). Si(001)16x2 gas-source molecular-beam epitaxy: growth kinetics. Applied Physics Letters, 76(20), 2853-2855. https://doi.org/10.1063/1.126495

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