N. Taylor, H. Kim, Patrick Desjardins
, Y. L. Foo and J. E. Greene
Article (2000)
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| Additional Information: | Nom historique du département: Département de génie physique et de génie des matériaux |
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| Department: | Department of Engineering Physics |
| PolyPublie URL: | https://publications.polymtl.ca/27815/ |
| Journal Title: | Applied Physics Letters (vol. 76, no. 20) |
| Publisher: | American Institute of Physics |
| DOI: | 10.1063/1.126495 |
| Official URL: | https://doi.org/10.1063/1.126495 |
| Date Deposited: | 18 Apr 2023 15:22 |
| Last Modified: | 08 Apr 2025 02:17 |
| Cite in APA 7: | Taylor, N., Kim, H., Desjardins, P., Foo, Y. L., & Greene, J. E. (2000). Si(001)16x2 gas-source molecular-beam epitaxy: growth kinetics. Applied Physics Letters, 76(20), 2853-2855. https://doi.org/10.1063/1.126495 |
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