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Sn-enhanced epitaxial thickness during low-temperature Ge(001) molecular beam epitaxy

K. A. Bratland, Y. L. Foo, Patrick Desjardins and J. E. Greene

Article (2003)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/26058/
Journal Title: Applied Physics Letters (vol. 82, no. 24)
Publisher: American Institute of Physics
DOI: 10.1063/1.1578712
Official URL: https://doi.org/10.1063/1.1578712
Date Deposited: 18 Apr 2023 15:19
Last Modified: 05 Apr 2024 11:12
Cite in APA 7: Bratland, K. A., Foo, Y. L., Desjardins, P., & Greene, J. E. (2003). Sn-enhanced epitaxial thickness during low-temperature Ge(001) molecular beam epitaxy. Applied Physics Letters, 82(24), 4247-4247. https://doi.org/10.1063/1.1578712

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