K. A. Bratland, Y. L. Foo, Patrick Desjardins
and J. E. Greene
Article (2003)
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| Department: | Department of Engineering Physics |
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| PolyPublie URL: | https://publications.polymtl.ca/26058/ |
| Journal Title: | Applied Physics Letters (vol. 82, no. 24) |
| Publisher: | American Institute of Physics |
| DOI: | 10.1063/1.1578712 |
| Official URL: | https://doi.org/10.1063/1.1578712 |
| Date Deposited: | 18 Apr 2023 15:19 |
| Last Modified: | 08 Apr 2025 02:15 |
| Cite in APA 7: | Bratland, K. A., Foo, Y. L., Desjardins, P., & Greene, J. E. (2003). Sn-enhanced epitaxial thickness during low-temperature Ge(001) molecular beam epitaxy. Applied Physics Letters, 82(24), 4247-4247. https://doi.org/10.1063/1.1578712 |
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