<  Back to the Polytechnique Montréal portal

Arsenic incorporation during Si(001): As gas-source molecular-beam epitaxy from Si2H6 and AsH3: effects on film growth kinetics

H. Kim, G. Glass, J. A. N. T. Soares, Patrick Desjardins and J. E. Greene

Article (2000)

An external link is available for this item
Additional Information: Nom historique du département: Département de génie physique et de génie des matériaux
Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/28083/
Journal Title: Journal of Applied Physics (vol. 88, no. 12)
Publisher: American Institute of Physics
DOI: 10.1063/1.1324701
Official URL: https://doi.org/10.1063/1.1324701
Date Deposited: 18 Apr 2023 15:22
Last Modified: 05 Apr 2024 11:16
Cite in APA 7: Kim, H., Glass, G., Soares, J. A. N. T., Desjardins, P., & Greene, J. E. (2000). Arsenic incorporation during Si(001): As gas-source molecular-beam epitaxy from Si2H6 and AsH3: effects on film growth kinetics. Journal of Applied Physics, 88(12), 7067-7078. https://doi.org/10.1063/1.1324701

Statistics

Dimensions

Repository Staff Only

View Item View Item