H. Kim, G. Glass, J. A. N. T. Soares, Patrick Desjardins
and J. E. Greene
Article (2000)
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| Additional Information: | Nom historique du département: Département de génie physique et de génie des matériaux |
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| Department: | Department of Engineering Physics |
| PolyPublie URL: | https://publications.polymtl.ca/28083/ |
| Journal Title: | Journal of Applied Physics (vol. 88, no. 12) |
| Publisher: | American Institute of Physics |
| DOI: | 10.1063/1.1324701 |
| Official URL: | https://doi.org/10.1063/1.1324701 |
| Date Deposited: | 18 Apr 2023 15:22 |
| Last Modified: | 08 Apr 2025 02:17 |
| Cite in APA 7: | Kim, H., Glass, G., Soares, J. A. N. T., Desjardins, P., & Greene, J. E. (2000). Arsenic incorporation during Si(001): As gas-source molecular-beam epitaxy from Si2H6 and AsH3: effects on film growth kinetics. Journal of Applied Physics, 88(12), 7067-7078. https://doi.org/10.1063/1.1324701 |
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