Pathways for hydrogen desorption from Si₁₋ₓGeₓ(001) during gas-source molecular-beam epitaxy and ultrahigh-vacuum chemical vapor deposition

H. Kim, Patrick Desjardins, J. R. Abelson and J. E. Greene

Article (1998)

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Department:	Department of Engineering Physics
PolyPublie URL:	https://publications.polymtl.ca/29571/
Journal Title:	Physical review. B, Condensed matter (vol. 58, no. 8)
Publisher:	American Physical Society
DOI:	10.1103/physrevb.58.4803
Official URL:	https://doi.org/10.1103/physrevb.58.4803
Date Deposited:	18 Apr 2023 15:23
Last Modified:	25 Sep 2024 16:11

Cite in APA 7:	Kim, H., Desjardins, P., Abelson, J. R., & Greene, J. E. (1998). Pathways for hydrogen desorption from Si₁₋ₓGeₓ(001) during gas-source molecular-beam epitaxy and ultrahigh-vacuum chemical vapor deposition. Physical review. B, Condensed matter, 58(8), 4803-4808. https://doi.org/10.1103/physrevb.58.4803
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