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Temperature-modulated Si(001): as gas-source molecular beam epitaxy: growth kinetics and As incorporation

H. Kim, G. Glass, J. A. N. T. Soares, Patrick Desjardins and J. E. Greene

Article (2001)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/27302/
Journal Title: Applied Physics Letters (vol. 79, no. 20)
Publisher: American Institute of Physics
DOI: 10.1063/1.1415420
Official URL: https://doi.org/10.1063/1.1415420
Date Deposited: 18 Apr 2023 15:21
Last Modified: 05 Apr 2024 11:14
Cite in APA 7: Kim, H., Glass, G., Soares, J. A. N. T., Desjardins, P., & Greene, J. E. (2001). Temperature-modulated Si(001): as gas-source molecular beam epitaxy: growth kinetics and As incorporation. Applied Physics Letters, 79(20), 3263-3265. https://doi.org/10.1063/1.1415420

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