Documents dont l'auteur est "Eades, J. A."

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Taylor, N., Kim, H., Spila, T., Eades, J. A., Glass, G., Desjardins, P., & Greene, J. E. (1999). Growth of Si₁₋ₓGeₓ(011) on Si(011)16x2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions. Journal of Applied Physics, 85(1), 501-511. Lien externe