C. Lavoie, R. Purtell, C. Coïa, C. Detavernier, Patrick Desjardins, J. Jordan-Sweet, C. Jr. Cabral and F. M. D'Heurle
Paper (2002)
An external link is available for this itemDepartment: | Department of Engineering Physics |
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PolyPublie URL: | https://publications.polymtl.ca/26509/ |
Conference Title: | Rapid thermal and other short-time processing technologies III Electrochemical Society |
Conference Location: | Philadelphia, PA, USA |
Conference Date(s): | 2002-05-13 - 2002-05-16 |
Editors: | Paul J. Timans, Evgeni Gusev, Fred Roozeboom, Mehmet C. Öztürk and Dim-Lee Kwong |
Publisher: | Electrochemical Society |
Official URL: | https://www.electrochem.org/dl/ma/201/pdfs/0752.pd... |
Date Deposited: | 18 Apr 2023 15:20 |
Last Modified: | 25 Sep 2024 16:07 |
Cite in APA 7: | Lavoie, C., Purtell, R., Coïa, C., Detavernier, C., Desjardins, P., Jordan-Sweet, J., Cabral, C. J., & D'Heurle, F. M. (2002, May). In situ monitoring of thin film reactions during rapid thermal annealing: nickel silicide formation [Paper]. Rapid thermal and other short-time processing technologies III Electrochemical Society, Philadelphia, PA, USA. https://www.electrochem.org/dl/ma/201/pdfs/0752.pdf |
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