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In situ monitoring of thin film reactions during rapid thermal annealing: nickel silicide formation

C. Lavoie, R. Purtell, C. Coïa, C. Detavernier, Patrick Desjardins, J. Jordan-Sweet, C. Jr. Cabral and F. M. D'Heurle

Paper (2002)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/26509/
Conference Title: Rapid thermal and other short-time processing technologies III Electrochemical Society
Conference Location: Philadelphia, PA, USA
Conference Date(s): 2002-05-13 - 2002-05-16
Editors: Paul J. Timans, Evgeni Gusev, Fred Roozeboom, Mehmet C. Öztürk and Dim-Lee Kwong
Publisher: Electrochemical Society
Official URL: https://www.electrochem.org/dl/ma/201/pdfs/0752.pd...
Date Deposited: 18 Apr 2023 15:20
Last Modified: 05 Apr 2024 11:13
Cite in APA 7: Lavoie, C., Purtell, R., Coïa, C., Detavernier, C., Desjardins, P., Jordan-Sweet, J., Cabral, C. J., & D'Heurle, F. M. (2002, May). In situ monitoring of thin film reactions during rapid thermal annealing: nickel silicide formation [Paper]. Rapid thermal and other short-time processing technologies III Electrochemical Society, Philadelphia, PA, USA. https://www.electrochem.org/dl/ma/201/pdfs/0752.pdf

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