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Items where Author is "Detavernier, C."

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Number of items: 10.

C

Coia, C., Lavoie, C., D'Heurle, F. M., Detavernier, C., Desjardins, P., & Kellock, A. J. (2005, May). Reactive diffusion in the Ni-Si system: Influence of Ni thickness on the phase formation sequence [Paper]. 207th Meeting of the Electrochemical Society, Québec, Canada. External link

G

Gaudet, S., Lavoie, C., Detavernier, C., & Desjardins, P. (2006, May). Germanide phase formation and texture [Paper]. 2006 International SiGe Technology and Device Meeting, 15-17 May 2006, Princeton, NJ, USA. External link

Gaudet, S., Detavernier, C., Lavoie, C., & Desjardins, P. (2006). Reaction of thin Ni films with Ge: phase formation and texture. Journal of Applied Physics, 100(3), 034306-1-034306-10. External link

Gaudet, S., Detavernier, C., Kellock, A. J., Desjardins, P., & Lavoie, C. (2006). Thin film reaction of transition metals with germanium. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 24(3), 474-485. External link

K

Knaepen, W., Gaudet, S., Detavernier, C., Van Meirhaeghe, R. L., Sweet, J. J., & Lavoie, C. (2009). In situ x-ray diffraction study of metal induced crystallization of amorphous germanium. Journal of Applied Physics, 105(8), 083532-083532. External link

Kittl, J. A., Pawlak, M. A., Torregiani, C., Lauwers, A., Demeurisse, C., Vrancken, C., Absil, P. P., Biesemans, S., Coia, C., Detavernier, C., Jordan-Sweet, J., & Lavoie, C. (2007). Transient and End Silicide Phase Formation in Thin Film Ni/Polycrystalline-Si Reactions for Fully Silicided Gate Applications. Applied Physics Letters, 91(17). External link

L

Leroy, W. P., Detavernier, C., Van Meirhaeghe, R. L., & Lavoie, C. (2007). Thin Film Solid-State Reactions Forming Carbides as Contact Materials for Carbon-Containing Semiconductors. Journal of Applied Physics, 101(5), 053714-1. External link

Leroy, W. P., Detavernier, C., Van Meirhaeghe, R. L., Kellock, A. J., & Lavoie, C. (2006). Solid-State Formation of Titanium Carbide and Molybdenum Carbide as Contacts for Carbon-Containing Semiconductors. Journal of Applied Physics, 99(6). External link

Lavoie, C., Coia, C., D'heurle, F. M., Detavernier, C., Cabral, C., Desjardins, P., & Kellock, A. J. (2004, July). Reactive Diffusion in the Ni-Si System: Phase Sequence and Formation of Metal-Rich Phases [Paper]. Diffusion in Materials: Dimat 2004 : 6th International Conference on Diffusion in Materials, Cracow, Poland. External link

Lavoie, C., Purtell, R., Coïa, C., Detavernier, C., Desjardins, P., Jordan-Sweet, J., Cabral, C. J., & D'Heurle, F. M. (2002, May). In situ monitoring of thin film reactions during rapid thermal annealing: nickel silicide formation [Paper]. Rapid thermal and other short-time processing technologies III Electrochemical Society, Philadelphia, PA, USA. External link

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