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Transient and End Silicide Phase Formation in Thin Film Ni/Polycrystalline-Si Reactions for Fully Silicided Gate Applications

J. A. Kittl, M. A. Pawlak, C. Torregiani, A. Lauwers, C. Demeurisse, C. Vrancken, P. P. Absil, S. Biesemans, C. Coia, C. Detavernier, J. Jordan-Sweet and Christian Lavoie

Article (2007)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/21789/
Journal Title: Applied Physics Letters (vol. 91, no. 17)
Publisher: American Institute of Physics
DOI: 10.1063/1.2799247
Official URL: https://doi.org/10.1063/1.2799247
Date Deposited: 18 Apr 2023 15:16
Last Modified: 08 Apr 2025 02:09
Cite in APA 7: Kittl, J. A., Pawlak, M. A., Torregiani, C., Lauwers, A., Demeurisse, C., Vrancken, C., Absil, P. P., Biesemans, S., Coia, C., Detavernier, C., Jordan-Sweet, J., & Lavoie, C. (2007). Transient and End Silicide Phase Formation in Thin Film Ni/Polycrystalline-Si Reactions for Fully Silicided Gate Applications. Applied Physics Letters, 91(17). https://doi.org/10.1063/1.2799247

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