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GaAs₁₋ₓNₓ on GaAs(001): Nitrogen Incorporation Kinetics From Trimethylgallium, Tertiarybutylarsine, and 1,1-Dimethylhydrazine Organometallic Vapor-Phase Epitaxy

J. N. Beaudry, Rémo A. Masut and Patrick Desjardins

Article (2008)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/21127/
Journal Title: Journal of Crystal Growth (vol. 310, no. 6)
Publisher: Elsevier
DOI: 10.1016/j.jcrysgro.2007.12.039
Official URL: https://doi.org/10.1016/j.jcrysgro.2007.12.039
Date Deposited: 18 Apr 2023 15:15
Last Modified: 05 Apr 2024 11:04
Cite in APA 7: Beaudry, J. N., Masut, R. A., & Desjardins, P. (2008). GaAs₁₋ₓNₓ on GaAs(001): Nitrogen Incorporation Kinetics From Trimethylgallium, Tertiarybutylarsine, and 1,1-Dimethylhydrazine Organometallic Vapor-Phase Epitaxy. Journal of Crystal Growth, 310(6), 1040-1048. https://doi.org/10.1016/j.jcrysgro.2007.12.039

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