GaAs₁₋ₓNₓ on GaAs(001): Nitrogen Incorporation Kinetics From Trimethylgallium, Tertiarybutylarsine, and 1,1-Dimethylhydrazine Organometallic Vapor-Phase Epitaxy

Jean-Nicolas Beaudry, Rémo A. Masut and Patrick Desjardins

Article (2008)

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Department:	Department of Engineering Physics
Research Center:	RQMP - Regroupement québécois sur les matériaux de pointe
PolyPublie URL:	https://publications.polymtl.ca/21127/
Journal Title:	Journal of Crystal Growth (vol. 310, no. 6)
Publisher:	Elsevier
DOI:	10.1016/j.jcrysgro.2007.12.039
Official URL:	https://doi.org/10.1016/j.jcrysgro.2007.12.039
Date Deposited:	18 Apr 2023 15:15
Last Modified:	27 Sep 2024 11:41

Cite in APA 7:	Beaudry, J.-N., Masut, R. A., & Desjardins, P. (2008). GaAs₁₋ₓNₓ on GaAs(001): Nitrogen Incorporation Kinetics From Trimethylgallium, Tertiarybutylarsine, and 1,1-Dimethylhydrazine Organometallic Vapor-Phase Epitaxy. Journal of Crystal Growth, 310(6), 1040-1048. https://doi.org/10.1016/j.jcrysgro.2007.12.039
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