P. Wei, M. Chicoine, S. Gujrathi, François Schiettekatte, J. N. Beaudry, Rémo A. Masut and Patrick Desjardins
Article (2004)
An external link is available for this item| Department: | Department of Engineering Physics |
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| Research Center: | GCM - Thin Film Physics and Technology Research Group |
| PolyPublie URL: | https://publications.polymtl.ca/24531/ |
| Journal Title: | Journal of vacuum science and technology. A, Vacuum, surfaces, and films (vol. 22, no. 3) |
| Publisher: | American Vacuum Society |
| DOI: | 10.1116/1.1648671 |
| Official URL: | https://doi.org/10.1116/1.1648671 |
| Date Deposited: | 18 Apr 2023 15:19 |
| Last Modified: | 08 Apr 2025 02:13 |
| Cite in APA 7: | Wei, P., Chicoine, M., Gujrathi, S., Schiettekatte, F., Beaudry, J. N., Masut, R. A., & Desjardins, P. (2004). Characterization of GaAs₁₋ₓ Nₓ epitaxial layers by ion beam analysis. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(3), 908-911. https://doi.org/10.1116/1.1648671 |
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