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Documents dont l'auteur est "Beaudry, J. N."

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Nombre de documents: 7

B

Beaudry, J. N., Masut, R. A., & Desjardins, P. (2008). GaAs₁₋ₓNₓ on GaAs(001): Nitrogen Incorporation Kinetics From Trimethylgallium, Tertiarybutylarsine, and 1,1-Dimethylhydrazine Organometallic Vapor-Phase Epitaxy. Journal of Crystal Growth, 310(6), 1040-1048. Lien externe

Bentoumi, G., Yaïche, Z., Leonelli, R., Beaudry, J. N., Desjardins, P., & Masut, R. A. (2008). Low-Temperature Emission in Dilute GaAsN Alloys Grown by Metalorganic Vapor Phase Epitaxy. Journal of Applied Physics, 103(6), 063526-1-063526-5. Lien externe

Bentoumi, G., Timoshevskii, V., Madini, N., Côté, M., Leonelli, R., Beaudry, J. N., Desjardins, P., & Masut, R. A. (2004). Evidence for large configuration-induced band-gap fluctuations in GaAs₁₋ₓNₓ alloys. Physical Review. B, Condensed Matter and Materials Physics, 70(3), 35315.1-35315.5. Lien externe

S

Shtinkov, N., Turcotte, S., Beaudry, J. N., Desjardins, P., & Masut, R. A. (2004). Electronic and Optical Properties of Gaasn/Gaas Quantum Wells: a Tight-Binding Study. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(4), 1606-1609. Lien externe

T

Turcotte, S., Beaudry, J. N., Masut, R. A., Desjardins, P., Bentoumi, G., & Leonelli, R. (2008). Experimental Investigation of the Variation of the Absorption Coefficient With Nitrogen Content in GaasN and GaInAsN Grown on GaAs (001). Journal of Applied Physics, 104(8), 083511. Lien externe

Timoshevskii, V., Côté, M., Gilbert, G., Leonelli, R., Turcotte, S., Beaudry, J. N., Desjardins, P., Larouche, S., Martinu, L., & Masut, R. A. (2006). Experimental and Theoretical Studies of the E+ Optical Transition in GaAsN Alloys. Physical Review B, 74(16). Lien externe

W

Wei, P., Chicoine, M., Gujrathi, S., Schiettekatte, F., Beaudry, J. N., Masut, R. A., & Desjardins, P. (2004). Characterization of GaAs₁₋ₓ Nₓ epitaxial layers by ion beam analysis. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(3), 908-911. Lien externe

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