Competing strain relaxation mechanisms in organometallic vapor phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001)

Patrick Desjardins, L. Isnard, H. Marchand and Rémo A. Masut

Article (1998)

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Additional Information:	Nom historique du département: Département de génie physique et de génie des matériaux
Department:	Department of Engineering Physics
Research Center:	GCM - Thin Film Physics and Technology Research Group
PolyPublie URL:	https://publications.polymtl.ca/29725/
Journal Title:	Journal of vacuum science and technology. A, Vacuum, surfaces, and films (vol. 16, no. 2)
Publisher:	American Vacuum Society
DOI:	10.1116/1.581058
Official URL:	https://doi.org/10.1116/1.581058
Date Deposited:	18 Apr 2023 15:23
Last Modified:	08 Apr 2025 02:20

Cite in APA 7:	Desjardins, P., Isnard, L., Marchand, H., & Masut, R. A. (1998). Competing strain relaxation mechanisms in organometallic vapor phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001). Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 776-780. https://doi.org/10.1116/1.581058
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