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Documents dont l'auteur est "Marchand, H."

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Nombre de documents: 9

B

Beaudoin, M., Desjardins, P., Aït-Ouali, A., Brebner, J. L., Yip, R. Y. F., Marchand, H., Isnard, L., & Masut, R. A. (2000). Optical properties and heterojunction band alignment in fully coherent strain-compensated InAsₓP₁₋ₓ /GayIn₁₋yP multilayers on InP(001). Journal of Applied Physics, 87(5), 2320-2326. Lien externe

D

Desjardins, P., Isnard, L., Marchand, H., & Masut, R. A. (1998). Competing strain relaxation mechanisms in organometallic vapor phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001). Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 776-780. Lien externe

Desjardins, P., Marchand, H., Isnard, L., & Masut, R. A. (1997). Microstructure and strain relaxation in organometallic vapor phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001). Journal of Applied Physics, 81(8), 3501-3511. Lien externe

M

Marchand, H., Desjardins, P., Guillon, S., Paultre, J.-E., Bougrioua, Z., Yip, R. Y.-F., & Masut, R. A. (1997). Metalorganic vapor phase epitaxial growth and structural characterization of self-assembled InAs nanometer-sized islands on InP(001). Journal of Electronic Materials, 26(10), 1205-1213. Lien externe

Marchand, H., Desjardins, P., Guillon, S., Paultre, J. E., Bougrioua, Z., Yip, R. Y. F., & Masut, R. A. (1997). Metalorganic vapor phase epitaxy of coherent self-assembled inAs nanometer-sized islands in InP(001). Applied Physics Letters, 71(4), 527-529. Lien externe

Marchand, H., Cournoyer, A., Enguehard, F., & Bertrand, L. (1997). Phase optimization for quantitative analysis using phase fourier transform photoacoustic spectroscopy. Optical Engineering, 36(2), 312-320. Lien externe

R

Raymond, S., Labrie, D., Girard, J.-F., Poirier, S., Awirothananon, S., Poole, P. J., Marchand, H., Desjardins, P., & Masut, R. A. (novembre 2000). Tuning of the electronic properties of self-assembled InAs/InP quantum dots by rapid thermal annealing [Communication écrite]. Semiconductor quantum dots II, Boston, USA. Non disponible

Y

Yip, R. Y.-F., Desjardins, P., Isnard, L., Aït-Ouali, A., Bensaada, A., Marchand, H., Brebner, J. L., Currie, J. F., & Masut, R. A. (1998). Band alignment and barrier height considerations for the quantum-confined Stark effect. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 801-804. Lien externe

Yip, R. Y. F., Desjardins, P., Isnard, L., Aït-Ouali, A., Marchand, H., Brebner, J. L., Currie, J. F., & Masut, R. A. (1998). Band Alignment Engineering for High Speed, Low Drive Field Quantum-Confined Stark Effect Devices. Journal of Applied Physics, 83(3), 1758-1769. Lien externe

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