Microstructure and strain relaxation in organometallic vapor phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001)

Patrick Desjardins, H. Marchand, L. Isnard and Rémo A. Masut

Article (1997)

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Department:	Department of Engineering Physics
Research Center:	GCM - Thin Film Physics and Technology Research Group
PolyPublie URL:	https://publications.polymtl.ca/30525/
Journal Title:	Journal of Applied Physics (vol. 81, no. 8)
Publisher:	American Institute of Physics
DOI:	10.1063/1.365049
Official URL:	https://doi.org/10.1063/1.365049
Date Deposited:	18 Apr 2023 15:23
Last Modified:	08 Apr 2025 02:21

Cite in APA 7:	Desjardins, P., Marchand, H., Isnard, L., & Masut, R. A. (1997). Microstructure and strain relaxation in organometallic vapor phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001). Journal of Applied Physics, 81(8), 3501-3511. https://doi.org/10.1063/1.365049
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