Electronic states of ultrathin InAs/InP (001) quantum wells: a tight-binding study of the effects of band offset, strain, and intermixing

N. Shtinkov, Patrick Desjardins et Rémo A. Masut

Article de revue (2002)

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Département:	Département de génie physique
URL de PolyPublie:	https://publications.polymtl.ca/26286/
Titre de la revue:	Physical Review. B, Condensed Matter and Materials Physics (vol. 66, no 19)
Maison d'édition:	American Physical Society
DOI:	10.1103/physrevb.66.195303
URL officielle:	https://doi.org/10.1103/physrevb.66.195303
Date du dépôt:	18 avr. 2023 15:21
Dernière modification:	05 avr. 2024 11:13

Citer en APA 7:	Shtinkov, N., Desjardins, P., & Masut, R. A. (2002). Electronic states of ultrathin InAs/InP (001) quantum wells: a tight-binding study of the effects of band offset, strain, and intermixing. Physical Review. B, Condensed Matter and Materials Physics, 66(19), 195303 (8 pages). https://doi.org/10.1103/physrevb.66.195303
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