Electronic states of ultrathin InAs/InP (001) quantum wells: a tight-binding study of the effects of band offset, strain, and intermixing

Nikolay Shtinkov, Patrick Desjardins and Rémo A. Masut

Article (2002)

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Department:	Department of Engineering Physics
Research Center:	GCM - Thin Film Physics and Technology Research Group
PolyPublie URL:	https://publications.polymtl.ca/26286/
Journal Title:	Physical Review. B, Condensed Matter and Materials Physics (vol. 66, no. 19)
Publisher:	American Physical Society
DOI:	10.1103/physrevb.66.195303
Official URL:	https://doi.org/10.1103/physrevb.66.195303
Date Deposited:	18 Apr 2023 15:21
Last Modified:	25 Sep 2024 16:06

Cite in APA 7:	Shtinkov, N., Desjardins, P., & Masut, R. A. (2002). Electronic states of ultrathin InAs/InP (001) quantum wells: a tight-binding study of the effects of band offset, strain, and intermixing. Physical Review. B, Condensed Matter and Materials Physics, 66(19), 195303 (8 pages). https://doi.org/10.1103/physrevb.66.195303
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