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Electronic states of ultrathin InAs/InP (001) quantum wells: a tight-binding study of the effects of band offset, strain, and intermixing

N. Shtinkov, Patrick Desjardins and Rémo A. Masut

Article (2002)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/26286/
Journal Title: Physical Review. B, Condensed Matter and Materials Physics (vol. 66, no. 19)
Publisher: American Physical Society
DOI: 10.1103/physrevb.66.195303
Official URL: https://doi.org/10.1103/physrevb.66.195303
Date Deposited: 18 Apr 2023 15:21
Last Modified: 05 Apr 2024 11:13
Cite in APA 7: Shtinkov, N., Desjardins, P., & Masut, R. A. (2002). Electronic states of ultrathin InAs/InP (001) quantum wells: a tight-binding study of the effects of band offset, strain, and intermixing. Physical Review. B, Condensed Matter and Materials Physics, 66(19), 195303 (8 pages). https://doi.org/10.1103/physrevb.66.195303

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