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Structural properties of InAs nanocrystals formed by sequential implantation of In and As ions in the Si (100) matrix

A. Tchebotareva, J. L. Brebner, S. Roorda, Patrick Desjardins and C. W. White

Article (2002)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/26263/
Journal Title: Journal of Applied Physics (vol. 92, no. 8)
Publisher: American Institute of Physics
DOI: 10.1063/1.1507822
Official URL: https://doi.org/10.1063/1.1507822
Date Deposited: 18 Apr 2023 15:21
Last Modified: 05 Apr 2024 11:13
Cite in APA 7: Tchebotareva, A., Brebner, J. L., Roorda, S., Desjardins, P., & White, C. W. (2002). Structural properties of InAs nanocrystals formed by sequential implantation of In and As ions in the Si (100) matrix. Journal of Applied Physics, 92(8), 4664-4671. https://doi.org/10.1063/1.1507822

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