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Aït-Ouali, A., Brebner, J. L., Yip, R. Y. F., & Masut, R. A. (1999). Analysis of the Stokes shift in InAsP/InP and InGaP/InP multiple quantum wells. Journal of Applied Physics, 86(12), 6803-6809. External link
Aït-Ouali, A., Chennouf, A., Yip, R. Y. F., Brebner, J. L., Leonelli, R., & Masut, R. A. (1998). Localization of Excitons by Potential Fluctuations and Its Effect on the Stokes Shift in InGaP/InP Quantum Confined Heterostructures. Journal of Applied Physics, 84(10), 5639-5642. External link
Aït-Ouali, A., Yip, R. Y. F., Brebner, J. L., & Masut, R. A. (1998). Strain Relaxation and Exciton Localization Effects on the Stokes Shift in InAsₓP₁₋ₓ/InP Multiple Quantum Wells. Journal of Applied Physics, 83(6), 3153-3160. External link
Beaudoin, M., Desjardins, P., Aït-Ouali, A., Brebner, J. L., Yip, R. Y. F., Marchand, H., Isnard, L., & Masut, R. A. (2000). Optical properties and heterojunction band alignment in fully coherent strain-compensated InAsₓP₁₋ₓ /GayIn₁₋yP multilayers on InP(001). Journal of Applied Physics, 87(5), 2320-2326. External link
Bensaada, A., Graham, J. T., Brebner, J. L., Chennouf, A., Cochrane, R. W., Leonelli, R., & Masut, R. A. (1994). Band alignment in GaₓIn₁₋ₓP/InP heterostructures. Applied Physics Letters, 64(3), 273-275. External link
Brebner, J. L., Cochrane, R. W., Groleau, R., Gujrathi, S., Kéroack, D., Lépine, Y., Martín, J. P., Vanaček, M., Aktik, Ç., Aktik, M., Azelmad, A., Currie, J. F., Poulin-Dandurand, S., Ranchoux, B., Sacher, E., Tannous, C., Wertheimer, M. R., & Yelon, A. (1985). Progress in amorphous-silicon photovoltaic-device research. Canadian Journal of Physics, 63(6), 786-797. External link
Gagnon, G., Currie, J. F., Brebner, J. L., & Darwall, T. (1996). Efficiency of TiN diffusion barrier between Al and Si prepared by reactive evaporation and rapid thermal annealing. Journal of Applied Physics, 79(10), 7612-7620. External link
Gagnon, G., Currie, J. F., Beique, G., Brebner, J. L., Gujrathi, S. C., & Ouellet, L. (1994). Characterization of reactively evaporated TiN layers for diffusion barrier applications. Journal of Applied Physics, 75(3), 1565-1570. External link
Leonelli, R., Tran, C. A., Brebner, J. L., Graham, J., Tabti, R., Masut, R. A., & Charbonneau, S. (1993). Optical and structural properties of metalorganic-vapor-phase-epitaxy-grown InAs quantum wells and quantum dots in InP. Physical review. B, Condensed matter, 48(15), 11135-11143. External link
Perluzzo, G., Aktik, Ç., Currie, J. F., Poulin-Dandurand, S., Yelon, A., Brebner, J. L., & Cochrane, R. W. (1987). Doping glow-discharge amorphous silicon by metal coevaporation. Canadian Journal of Physics, 65(8), 1027-1029. External link
Paquin, L., Currie, J. F., Noirhomme, B., Poulin-Dandurand, S., Sacher, E., Wertheimer, M. R., Yelon, A., Brebner, J. L., Cochrane, R. W., Groleau, R., Lu, H., & Martin, J. P. (1983, July). Comparison of amorphous silicon (a-Si:H) prepared in radio and microwave frequency glow discharges [Paper]. 6th International Symposium on Plasma Chemistry (ISPC 1983), Montreal, Qc, Canada (5 pages). External link
Tchebotareva, A., Brebner, J. L., Roorda, S., Desjardins, P., & White, C. W. (2002). Structural properties of InAs nanocrystals formed by sequential implantation of In and As ions in the Si (100) matrix. Journal of Applied Physics, 92(8), 4664-4671. External link
Tran, C. A., Masut, R. A., Brebner, J. L., Jouanne, M., Salamancariba, L., Shen, C. C., Sieber, B., & Miri, A. (1994). Atomic layer epitaxy and characterization of InP and InAs/InP heterostructures. Journal of Crystal Growth, 145(1-4), 332-337. External link
Tran, C. A., Masut, R. A., Brebner, J. L., & Jouanne, M. (1994). Atomic layer epitaxy and structural characterization of InP and InAs/InP heterostructures. Journal of Applied Physics, 75(5), 2398-2405. External link
Tran, C. A., Brebner, J. L., Leonelli, R., Jouanne, M., & Masut, R. A. (1994). E₁-gap resonant enhancement of the raman-scattering from highly strained InAs/InP short-period superlattices. Superlattices and Microstructures, 15(4), 391-397. External link
Tran, C. A., Graham, J. T., Brebner, J. L., & Masut, R. A. (1994). Interfaces of InAsP/InP multiple quantum wells grown by metalorganic vapor phase epitaxy. Journal of Electronic Materials, 23(12), 1291-1296. External link
Tran, C. A., Brebner, J. L., Leonelli, R., Jouanne, M., & Masut, R. A. (1994). Optical phonons in strained single InAs/InP quantum wells: A Raman study. Physical review. B, Condensed matter, 49(16), 11268-11271. External link
Tran, C. A., Jouanne, M., Brebner, J. L., & Masut, R. A. (1993). Effect of strain on confined optic phonons of highly strained InAs/InP superlattices. Journal of Applied Physics, 74(8), 4983-4989. External link
Watkins, S. P., Arès, R., Masut, R. A., Tran, C. A., & Brebner, J. L. (1994). Strain effects in high-purity InP epilayers grown on slightly mismatched substrates. Journal of Applied Physics, 75(5), 2460-2465. External link
Yip, R. Y. F., Desjardins, P., Isnard, L., Aït-Ouali, A., Marchand, H., Brebner, J. L., Currie, J. F., & Masut, R. A. (1998). Band Alignment Engineering for High Speed, Low Drive Field Quantum-Confined Stark Effect Devices. Journal of Applied Physics, 83(3), 1758-1769. External link
Yip, R. Y. F., Ait Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. A. (1997). Erratum: Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy. Journal of Applied Physics, 82(12), 6372-6372. External link
Zhao, Y. G., Masut, R. A., Brebner, J. L., Tran, C. A., & Graham, J. T. (1994). Temperature dependence of photoluminescence in InAsP/InP strained multiple quantum wells. Journal of Applied Physics, 76(10), 5921-5926. External link
Zhao, Y., Zhao, G., Brebner, J. L., Bensaada, A., & Masut, R. A. (1992). Observation of persistent photoconductivity in GaₓIn₁-ₓP/InP:Fe (0<or=x<0.18). Semiconductor Science and Technology, 7(11), 1359-1362. External link
