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Ait Ouali, A., Brebner, J. L., Yip, R. Y. F., & Masut, R. A. (1999). Analysis of the Stokes shift in InAsP/InP and InGaP/InP multiple quantum wells. Journal of Applied Physics, 86(12), 6803-6809. Lien externe
Ait-Ouali, A., Chennouf, A., Yip, R. Y. F., Brebner, J. L., Leonelli, R., & Masut, R. A. (1998). Localization of Excitons by Potential Fluctuations and Its Effect on the Stokes Shift in InGaP/InP Quantum Confined Heterostructures. Journal of Applied Physics, 84(10), 5639-5642. Lien externe
Ait-Ouali, A., Yip, R. Y. F., Brebner, J. L., & Masut, R. A. (1998). Strain Relaxation and Exciton Localization Effects on the Stokes Shift in InAsₓP₁₋ₓ/InP Multiple Quantum Wells. Journal of Applied Physics, 83(6), 3153-3160. Lien externe
Beaudoin, M., Desjardins, P., Ait Ouali, A., Brebner, J. L., Yip, R. Y. F., Marchand, H., Isnard, L., & Masut, R. A. (2000). Optical properties and heterojunction band alignment in fully coherent strain-compensated InAsₓP₁₋ₓ /GayIn₁₋yP multilayers on InP(001). Journal of Applied Physics, 87(5), 2320-2326. Lien externe
Bensaada, A., Graham, J. T., Brebner, J. L., Chennouf, A., Cochrane, R. W., Leonelli, R., & Masut, R. A. (1994). Band alignment in GaₓIn₁₋ₓP/InP heterostructures. Applied Physics Letters, 64(3), 273-275. Lien externe
Brebner, J. L., Cochrane, R. W., Groleau, R., Gujrathi, S., Kéroack, D., Lépine, Y., Martin, J.-P., Vanaček, M., Aktik, C., Aktik, M., Azelmad, A., Currie, J. F., Poulin-Dandurand, S., Ranchoux, B., Sacher, E., Tannous, C., Wertheimer, M. R., & Yelon, A. (1985). Progress in amorphous-silicon photovoltaic-device research. Canadian Journal of Physics, 63(6), 786-797. Lien externe
Gagnon, G., Currie, J. F., Brebner, J. L., & Darwall, T. (1996). Efficiency of TiN diffusion barrier between Al and Si prepared by reactive evaporation and rapid thermal annealing. Journal of Applied Physics, 79(10), 7612-7620. Lien externe
Gagnon, G., Currie, J. F., Beique, G., Brebner, J. L., Gujrathi, S. C., & Ouellet, L. (1994). Characterization of reactively evaporated TiN layers for diffusion barrier applications. Journal of Applied Physics, 75(3), 1565-1570. Lien externe
Tchebotareva, A., Brebner, J. L., Roorda, S., Desjardins, P., & White, C. W. (2002). Structural properties of InAs nanocrystals formed by sequential implantation of In and As ions in the Si (100) matrix. Journal of Applied Physics, 92(8), 4664-4671. Lien externe
Tran, C. A., Masut, R. A., Brebner, J. L., Jouanne, M., Salamancariba, L., Shen, C. C., Sieber, B., & Miri, A. (1994). Atomic layer epitaxy and characterization of InP and InAs/InP heterostructures. Journal of Crystal Growth, 145(1-4), 332-337. Lien externe
Tran, C. A., Masut, R. A., Brebner, J. L., & Jouanne, M. (1994). Atomic layer epitaxy and structural characterization of InP and InAs/InP heterostructures. Journal of Applied Physics, 75(5), 2398-2405. Lien externe
Tran, C. A., Brebner, J. L., Leonelli, R., Jouanne, M., & Masut, R. A. (1994). E₁-gap resonant enhancement of the raman-scattering from highly strained InAs/InP short-period superlattices. Superlattices and Microstructures, 15(4), 391-397. Lien externe
Tran, C. A., Graham, J. T., Brebner, J. L., & Masut, R. A. (1994). Interfaces of InAsP/InP multiple quantum wells grown by metalorganic vapor phase epitaxy. Journal of Electronic Materials, 23(12), 1291-1296. Lien externe
Tran, C. A., Brebner, J. L., Leonelli, R., Jouanne, M., & Masut, R. A. (1994). Optical phonons in strained single InAs/InP quantum wells: A Raman study. Physical review. B, Condensed matter, 49(16), 11268-11271. Lien externe
Watkins, S. P., Ares, R., Masut, R. A., Tran, C. A., & Brebner, J. L. (1994). Strain effects in high-purity InP epilayers grown on slightly mismatched substrates. Journal of Applied Physics, 75(5), 2460-2465. Lien externe
Yip, R. Y. F., Desjardins, P., Isnard, L., Ait-Ouali, A., Marchand, H., Brebner, J. L., Currie, J. F., & Masut, R. A. (1998). Band Alignment Engineering for High Speed, Low Drive Field Quantum-Confined Stark Effect Devices. Journal of Applied Physics, 83(3), 1758-1769. Lien externe
Yip, R. Y. F., Ait Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. A. (1997). Erratum: Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy. Journal of Applied Physics, 82(12), 6372-6372. Lien externe
Zhao, Y. G., Masut, R. A., Brebner, J. L., Tran, C. A., & Graham, J. T. (1994). Temperature dependence of photoluminescence in InAsP/InP strained multiple quantum wells. Journal of Applied Physics, 76(10), 5921-5926. Lien externe
