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Atomic layer epitaxy and characterization of InP and InAs/InP heterostructures

C. A. Tran, Rémo A. Masut, J. L. Brebner, M. Jouanne, L. Salamancariba, C. C. Shen, B. Sieber and A. Miri

Article (1994)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/32796/
Journal Title: Journal of Crystal Growth (vol. 145, no. 1-4)
Publisher: Elsevier
DOI: 10.1016/0022-0248(94)91072-3
Official URL: https://doi.org/10.1016/0022-0248%2894%2991072-3
Date Deposited: 18 Apr 2023 15:25
Last Modified: 05 Apr 2024 11:23
Cite in APA 7: Tran, C. A., Masut, R. A., Brebner, J. L., Jouanne, M., Salamancariba, L., Shen, C. C., Sieber, B., & Miri, A. (1994). Atomic layer epitaxy and characterization of InP and InAs/InP heterostructures. Journal of Crystal Growth, 145(1-4), 332-337. https://doi.org/10.1016/0022-0248%2894%2991072-3

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