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Items where Author is "Sieber, B."

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Number of items: 5.

C

Cléton, F., Sieber, B., Masut, R. A., Isnard, L., Bonard, J. M., & Ganière, J.-D. (1996). Photon recycling as the dominant process of luminescence generation in an electron-beam excited n-InP epilayer grown on an n⁺-InP substrate. Semiconductor Science and Technology, 11(5), 726-734. External link

Cléton, F., Sieber, B., Bensaada, A., Masut, R. A., Bonard, J. M., & Ganière, J. D. (1996). Transmission electron microscopy and cathodoluminescence of tensile‐strained GaₓIn₁₋ₓP/InP heterostructures. II. On the origin of luminescence heterogeneities in tensile stress relaxed GaₓIn₁₋ₓP/InP heterostructures. Journal of Applied Physics, 80(2), 837-845. External link

Cléton, F., Sieber, B., Lefebvre, A., Bensaada, A., Masut, R. A., Bonard, J. M., Ganière, J. D., & Ambri, M. (1996). Transmission electron-microscopy and cathodoluminescence of tensile-strained GaₓIn₁₋ₓP/InP heterostructures . 1. Spatial variations of the tensile-stress relaxation. Journal of Applied Physics, 80(2), 827-836. External link

Cleton, F., Sieber, B., Isnard, L., Masut, R. A., Bonard, J. M., & Ganiere, J. D. (1995, March). Band-to-band recombination in N+ InP substrate: Evidence of photon recycling [Paper]. International Conference on Microscopy of Semiconducting Materials (MSM 1995), Oxford University, UK. External link

T

Tran, C. A., Masut, R. A., Brebner, J. L., Jouanne, M., Salamancariba, L., Shen, C. C., Sieber, B., & Miri, A. (1994). Atomic layer epitaxy and characterization of InP and InAs/InP heterostructures. Journal of Crystal Growth, 145(1-4), 332-337. External link

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