Photon recycling as the dominant process of luminescence generation in an electron-beam excited n-InP epilayer grown on an n⁺-InP substrate

F. Cléton, B. Sieber, Rémo A. Masut, L. Isnard, J. M. Bonard and J. D. Ganiere

Article (1996)

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Department:	Department of Engineering Physics
Research Center:	GCM - Thin Film Physics and Technology Research Group
PolyPublie URL:	https://publications.polymtl.ca/31397/
Journal Title:	Semiconductor Science and Technology (vol. 11, no. 5)
Publisher:	IOP Publishing
DOI:	10.1088/0268-1242/11/5/013
Official URL:	https://doi.org/10.1088/0268-1242/11/5/013
Date Deposited:	18 Apr 2023 15:24
Last Modified:	25 Sep 2024 16:13

Cite in APA 7:	Cléton, F., Sieber, B., Masut, R. A., Isnard, L., Bonard, J. M., & Ganiere, J. D. (1996). Photon recycling as the dominant process of luminescence generation in an electron-beam excited n-InP epilayer grown on an n⁺-InP substrate. Semiconductor Science and Technology, 11(5), 726-734. https://doi.org/10.1088/0268-1242/11/5/013
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