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Items where Author is "Sieber, B."

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Jump to: 1996 | 1995 | 1994
Number of items: 5.

1996

Cléton, F., Sieber, B., Masut, R. A., Isnard, L., Bonard, J. M., & Ganière, J.-D. (1996). Photon recycling as the dominant process of luminescence generation in an electron-beam excited n-InP epilayer grown on an n⁺-InP substrate. Semiconductor Science and Technology, 11(5), 726-734. External link

Cléton, F., Sieber, B., Bensaada, A., Masut, R. A., Bonard, J. M., & Ganière, J. D. (1996). Transmission electron microscopy and cathodoluminescence of tensile‐strained GaₓIn₁₋ₓP/InP heterostructures. II. On the origin of luminescence heterogeneities in tensile stress relaxed GaₓIn₁₋ₓP/InP heterostructures. Journal of Applied Physics, 80(2), 837-845. External link

Cléton, F., Sieber, B., Lefebvre, A., Bensaada, A., Masut, R. A., Bonard, J. M., Ganière, J. D., & Ambri, M. (1996). Transmission electron-microscopy and cathodoluminescence of tensile-strained GaₓIn₁₋ₓP/InP heterostructures . 1. Spatial variations of the tensile-stress relaxation. Journal of Applied Physics, 80(2), 827-836. External link

1995

Cleton, F., Sieber, B., Isnard, L., Masut, R. A., Bonard, J. M., & Ganiere, J. D. (1995, March). Band-to-band recombination in N+ InP substrate: Evidence of photon recycling [Paper]. International Conference on Microscopy of Semiconducting Materials (MSM 1995), Oxford University, UK. External link

1994

Tran, C. A., Masut, R. A., Brebner, J. L., Jouanne, M., Salamancariba, L., Shen, C. C., Sieber, B., & Miri, A. (1994). Atomic layer epitaxy and characterization of InP and InAs/InP heterostructures. Journal of Crystal Growth, 145(1-4), 332-337. External link

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