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Erratum: “Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy” [J. Appl. Phys. 81, 1905 (1997)]

R. Y. F. Yip, Abderrahmane Ait Ouali, Ahmed Bensaada, Patrick Desjardins, Mario Beaudoin, L. Isnard, John Low Brebner, John F. Currie and Rémo A. Masut

Article (1997)

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Supplementary Material:
Department: Department of Engineering Physics
Research Center: GCM - Thin Film Physics and Technology Research Group
PolyPublie URL: https://publications.polymtl.ca/29963/
Journal Title: Journal of Applied Physics (vol. 82, no. 12)
Publisher: American Institute of Physics
DOI: 10.1063/1.366538
Official URL: https://doi.org/10.1063/1.366538
Date Deposited: 18 Apr 2023 15:23
Last Modified: 01 Apr 2026 10:06
Cite in APA 7: Yip, R. Y. F., Ait Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. A. (1997). Erratum: “Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy” [J. Appl. Phys. 81, 1905 (1997)]. Journal of Applied Physics, 82(12), 6372-6372. https://doi.org/10.1063/1.366538

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