R. Y. F. Yip, A. Ait Ouali, A. Bensaada, P. Desjardins, M. Beaudoin, L. Isnard, J. L. Brebner, John F. Currie and Rémo A. Masut
Article (1997)
An external link is available for this itemAdditional Information: | Erratum pour l'article publié dans Journal of Applied Physics, vol. 81, no 4, p. 1905 |
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Department: | Department of Engineering Physics |
Research Center: | GCM - Thin Film Physics and Technology Research Group |
PolyPublie URL: | https://publications.polymtl.ca/29963/ |
Journal Title: | Journal of Applied Physics (vol. 82, no. 12) |
Publisher: | American Institute of Physics |
DOI: | 10.1063/1.366538 |
Official URL: | https://doi.org/10.1063/1.366538 |
Date Deposited: | 18 Apr 2023 15:23 |
Last Modified: | 25 Sep 2024 16:11 |
Cite in APA 7: | Yip, R. Y. F., Ait Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. A. (1997). Erratum: Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy. Journal of Applied Physics, 82(12), 6372-6372. https://doi.org/10.1063/1.366538 |
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