R. Y. F. Yip, A. Ait Ouali, A. Bensaada, P. Desjardins, M. Beaudoin, L. Isnard, J. L. Brebner, John F. Currie and Rémo A. Masut
Article (1997)
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| Additional Information: | Erratum pour l'article publié dans Journal of Applied Physics, vol. 81, no 4, p. 1905 |
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| Department: | Department of Engineering Physics |
| Research Center: | GCM - Thin Film Physics and Technology Research Group |
| PolyPublie URL: | https://publications.polymtl.ca/29963/ |
| Journal Title: | Journal of Applied Physics (vol. 82, no. 12) |
| Publisher: | American Institute of Physics |
| DOI: | 10.1063/1.366538 |
| Official URL: | https://doi.org/10.1063/1.366538 |
| Date Deposited: | 18 Apr 2023 15:23 |
| Last Modified: | 25 Sep 2024 16:11 |
| Cite in APA 7: | Yip, R. Y. F., Ait Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. A. (1997). Erratum: Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy. Journal of Applied Physics, 82(12), 6372-6372. https://doi.org/10.1063/1.366538 |
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