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Erratum: Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy

R. Y. F. Yip, A. Ait Ouali, A. Bensaada, P. Desjardins, M. Beaudoin, L. Isnard, J. L. Brebner, John F. Currie and Rémo A. Masut

Article (1997)

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Additional Information: Erratum pour l'article publié dans Journal of Applied Physics, vol. 81, no 4, p. 1905
Department: Department of Engineering Physics
Research Center: GCM - Thin Film Physics and Technology Research Group
PolyPublie URL: https://publications.polymtl.ca/29963/
Journal Title: Journal of Applied Physics (vol. 82, no. 12)
Publisher: American Institute of Physics
DOI: 10.1063/1.366538
Official URL: https://doi.org/10.1063/1.366538
Date Deposited: 18 Apr 2023 15:23
Last Modified: 05 Apr 2024 11:19
Cite in APA 7: Yip, R. Y. F., Ait Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. A. (1997). Erratum: Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy. Journal of Applied Physics, 82(12), 6372-6372. https://doi.org/10.1063/1.366538

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