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Items where Author is "Bensaada, Ahmed"

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Number of items: 4.

B

Bensaada, A., Cochrane, R. W., & Masut, R. A. (1994, March). Dislocation-enhanced diffusion in heteroepitaxial GaInP/InP:S [Paper]. 6th International Conference on Indium Phosphide and Related Materials (IPRM 1994), Santa Barbara, CA, USA. External link

Bensaada, A., Chennouf, A., Cochrane, R. W., Leonelli, R., Cova, P., & Masut, R. A. (1992). Growth and structural properties of epitaxial GaxIn1−xP on InP. Journal of Applied Physics, 71(4), 1737-1743. External link

Y

Yip, R. Y. F., Ait Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. A. (1997). Erratum: “Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy” [J. Appl. Phys. 81, 1905 (1997)]. Journal of Applied Physics, 82(12), 6372-6372. External link

Yip, R. Y.-F., Aït-Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. A. (1997). Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy. Journal of Applied Physics, 81(4), 1905-1915. External link

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