Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metalorganic vapor phase epitaxy

R. Y.-F. Yip, A. Aït-Ouali, A. Bensaada, Patrick Desjardins, M. Beaudoin, L. Isnard, John Low Brebner, John F. Currie and Rémo A. Masut

Article (1997)

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Department:	Department of Engineering Physics
Research Center:	GCM - Thin Film Physics and Technology Research Group
PolyPublie URL:	https://publications.polymtl.ca/29961/
Journal Title:	Journal of Applied Physics (vol. 81, no. 4)
Publisher:	American Institute of Physics
DOI:	10.1063/1.365549
Official URL:	https://doi.org/10.1063/1.365549
Date Deposited:	18 Apr 2023 15:23
Last Modified:	25 Sep 2024 16:11

Cite in APA 7:	Yip, R. Y.-F., Aït-Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. A. (1997). Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, 81(4), 1905-1915. https://doi.org/10.1063/1.365549
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