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Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metalorganic vapor phase epitaxy

R. Y.-F. Yip, A. Aït-Ouali, A. Bensaada, Patrick Desjardins, M. Beaudoin, L. Isnard, John Low Brebner, John F. Currie and Rémo A. Masut

Article (1997)

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Department: Department of Engineering Physics
Research Center: GCM - Thin Film Physics and Technology Research Group
PolyPublie URL: https://publications.polymtl.ca/29961/
Journal Title: Journal of Applied Physics (vol. 81, no. 4)
Publisher: American Institute of Physics
DOI: 10.1063/1.365549
Official URL: https://doi.org/10.1063/1.365549
Date Deposited: 18 Apr 2023 15:23
Last Modified: 05 Apr 2024 11:19
Cite in APA 7: Yip, R. Y.-F., Aït-Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. A. (1997). Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, 81(4), 1905-1915. https://doi.org/10.1063/1.365549

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