R. Y.-F. Yip, Abderrahmane Aït-Ouali, Ahmed Bensaada, Patrick Desjardins, Mario Beaudoin, L. Isnard, John Low Brebner, John F. Currie and Rémo A. Masut
Article (1997)
An external link is available for this item| Supplementary Material: | |
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| Department: | Department of Engineering Physics |
| Research Center: | GCM - Thin Film Physics and Technology Research Group |
| Funders: | NSERC, FCAR |
| PolyPublie URL: | https://publications.polymtl.ca/29961/ |
| Journal Title: | Journal of Applied Physics (vol. 81, no. 4) |
| Publisher: | American Institute of Physics |
| DOI: | 10.1063/1.365549 |
| Official URL: | https://doi.org/10.1063/1.365549 |
| Date Deposited: | 18 Apr 2023 15:23 |
| Last Modified: | 01 Apr 2026 10:06 |
| Cite in APA 7: | Yip, R. Y.-F., Aït-Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. A. (1997). Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy. Journal of Applied Physics, 81(4), 1905-1915. https://doi.org/10.1063/1.365549 |
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