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Items where Author is "Brebner, John Low"

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Number of items: 9.

B

Barclay, R. P., Brebner, J. L., Perluzzo, G., & Seynhaeve, G. (1987). Effects of deep trapping and band bending on the transient photodecay in a-Si :H. Journal of Non-Crystalline Solids, 97-98, 603-606. External link

N

Najafi, S. I., Wang, W., Currie, J. F., Leonelli, R., & Brebner, J. L. (1989, April). Ion-Exchanged Rare-Earth Doped Waveguides [Paper]. International Congress on Optical Science and Engineering, Paris, France. Published in Proceedings of SPIE, 1128. External link

T

Tran, C. A., Masut, R. A., Brebner, J. L., Leonelli, R., & Cova, P. (1992, June). Growth of lnAsP/lnP Heterostructures by Low-Pressure Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine [Paper]. 6th International Conference Metalorganic Vapor Phase Epitaxy, Cambridge, MA, USA. External link

Tran, C. A., Masut, R. A., Brebner, J. L., & Leonelli, R. (1993). High-resolution x-ray diffraction to determine the self-limiting growth in atomic layer epitaxy of InP and InAs/InP heterostructures. Applied Physics Letters, 62(19), 2375-2377. External link

Tran, C. A., Masut, R. A., Brebner, J. L., Leonelli, R., Graham, J., & Cova, P. (1992). Growth and characterization of InAs microclusters in InP and InAsP/InP heterostructures by low pressure MOCVD using tertiarybutylarsine. Journal of Crystal Growth, 124(1-4), 596-603. External link

Tran, C. A., Masut, R. A., Cova, P., & Brebner, J. L. (1992). Growth of highly strained InAs/InP heterostructures by metalorganic chemical vapor deposition using tertiarybutylarsine. Applied Physics Letters, 60(5), 589-591. External link

Y

Yip, R. Y.-F., Desjardins, P., Isnard, L., Aït-Ouali, A., Bensaada, A., Marchand, H., Brebner, J. L., Currie, J. F., & Masut, R. A. (1998). Band alignment and barrier height considerations for the quantum-confined Stark effect. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 801-804. External link

Yip, R. Y. F., Ait Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. A. (1997). Erratum: “Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy” [J. Appl. Phys. 81, 1905 (1997)]. Journal of Applied Physics, 82(12), 6372-6372. External link

Yip, R. Y.-F., Aït-Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. A. (1997). Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy. Journal of Applied Physics, 81(4), 1905-1915. External link

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