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Documents dont l'auteur est "Brebner, John Low"

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Nombre de documents: 8

Article de revue

Yip, R. Y.-F., Desjardins, P., Isnard, L., Aït-Ouali, A., Bensaada, A., Marchand, H., Brebner, J. L., Currie, J. F., & Masut, R. A. (1998). Band alignment and barrier height considerations for the quantum-confined Stark effect. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 801-804. Lien externe

Yip, R. Y.-F., Aït-Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. A. (1997). Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy. Journal of Applied Physics, 81(4), 1905-1915. Lien externe

Tran, C. A., Masut, R. A., Brebner, J. L., & Leonelli, R. (1993). High-resolution x-ray diffraction to determine the self-limiting growth in atomic layer epitaxy of InP and InAs/InP heterostructures. Applied Physics Letters, 62(19), 2375-2377. Lien externe

Tran, C. A., Masut, R. A., Brebner, J. L., Leonelli, R., Graham, J., & Cova, P. (1992). Growth and characterization of InAs microclusters in InP and InAsP/InP heterostructures by low pressure MOCVD using tertiarybutylarsine. Journal of Crystal Growth, 124(1-4), 596-603. Lien externe

Tran, C. A., Masut, R. A., Cova, P., & Brebner, J. L. (1992). Growth of highly strained InAs/InP heterostructures by metalorganic chemical vapor deposition using tertiarybutylarsine. Applied Physics Letters, 60(5), 589-591. Lien externe

Barclay, R. P., Brebner, J. L., Perluzzo, G., & Seynhaeve, G. (1987). Effects of deep trapping and band bending on the transient photodecay in a-Si :H. Journal of Non-Crystalline Solids, 97-98, 603-606. Lien externe

Communication écrite

Najafi, S. I., Wang, W., Currie, J. F., Leonelli, R., & Brebner, J. L. (avril 1989). Ion-Exchanged Rare-Earth Doped Waveguides [Communication écrite]. International Congress on Optical Science and Engineering, Paris, France. Publié dans Proceedings of SPIE, 1128. Lien externe

Autre

Yip, R. Y. F., Ait Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. A. (1997). Erratum: “Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy” [J. Appl. Phys. 81, 1905 (1997)]. Journal of Applied Physics, 82(12), 6372-6372. Lien externe

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