Growth of highly strained InAs/InP heterostructures by metalorganic chemical vapor deposition using tertiarybutylarsine

C. A. Tran, Rémo A. Masut, Pedro Cova and John Low Brebner

Article (1992)

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Department:	Department of Engineering Physics
Research Center:	GCM - Thin Film Physics and Technology Research Group
PolyPublie URL:	https://publications.polymtl.ca/70712/
Journal Title:	Applied Physics Letters (vol. 60, no. 5)
Publisher:	American Institute of Physics
DOI:	10.1063/1.106590
Official URL:	https://doi.org/10.1063/1.106590
Date Deposited:	22 Dec 2025 15:03
Last Modified:	22 Dec 2025 15:03

Cite in APA 7:	Tran, C. A., Masut, R. A., Cova, P., & Brebner, J. L. (1992). Growth of highly strained InAs/InP heterostructures by metalorganic chemical vapor deposition using tertiarybutylarsine. Applied Physics Letters, 60(5), 589-591. https://doi.org/10.1063/1.106590
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