<  Back to the Polytechnique Montréal portal

Optical absorption and determination of band offset in strain-balanced GaInP/InAsP multiple quantum wells grown by low-pressure metalorganic vapor phase epitaxy

Yahya Ababou, Patrick Desjardins, A. Chennouf, Rémo A. Masut, Arthur Yelon, M. Beaudoin, A. Bensaada, R. Leonelli and Gilles L'Espérance

Article (1997)

An external link is available for this item
Additional Information: Nom historique du département: Département de métallurgie et de génie des matériaux
Department: Department of Engineering Physics
Research Center: (CM)² - Centre for Characterization and Microscopy of Materials
GCM - Thin Film Physics and Technology Research Group
PolyPublie URL: https://publications.polymtl.ca/30742/
Journal Title: Semiconductor Science and Technology (vol. 12, no. 5)
Publisher: IOP Publishing
DOI: 10.1088/0268-1242/12/5/006
Official URL: https://doi.org/10.1088/0268-1242/12/5/006
Date Deposited: 18 Apr 2023 15:23
Last Modified: 12 Mar 2025 15:25
Cite in APA 7: Ababou, Y., Desjardins, P., Chennouf, A., Masut, R. A., Yelon, A., Beaudoin, M., Bensaada, A., Leonelli, R., & L'Espérance, G. (1997). Optical absorption and determination of band offset in strain-balanced GaInP/InAsP multiple quantum wells grown by low-pressure metalorganic vapor phase epitaxy. Semiconductor Science and Technology, 12(5), 550-554. https://doi.org/10.1088/0268-1242/12/5/006

Statistics

Dimensions

Repository Staff Only

View Item View Item