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Optical absorption and determination of band offset in strain-balanced GaInP/InAsP multiple quantum wells grown by low-pressure metalorganic vapor phase epitaxy

Y. Ababou, Patrick Desjardins, A. Chennouf, Rémo A. Masut, Arthur Yelon, M. Beaudoin, A. Bensaada, R. Leonelli and Gilles L'Espérance

Article (1997)

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Additional Information: Nom historique du département: Département de métallurgie et de génie des matériaux
Department: Department of Engineering Physics
Research Center: GCM - Thin Film Physics and Technology Research Group
PolyPublie URL: https://publications.polymtl.ca/30742/
Journal Title: Semiconductor Science and Technology (vol. 12, no. 5)
Publisher: IOP Publishing
DOI: 10.1088/0268-1242/12/5/006
Official URL: https://doi.org/10.1088/0268-1242/12/5/006
Date Deposited: 18 Apr 2023 15:23
Last Modified: 05 Apr 2024 11:20
Cite in APA 7: Ababou, Y., Desjardins, P., Chennouf, A., Masut, R. A., Yelon, A., Beaudoin, M., Bensaada, A., Leonelli, R., & L'Espérance, G. (1997). Optical absorption and determination of band offset in strain-balanced GaInP/InAsP multiple quantum wells grown by low-pressure metalorganic vapor phase epitaxy. Semiconductor Science and Technology, 12(5), 550-554. https://doi.org/10.1088/0268-1242/12/5/006

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