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Ait-Ouali, A., Chennouf, A., Yip, R. Y. F., Brebner, J. L., Leonelli, R., & Masut, R. A. (1998). Localization of Excitons by Potential Fluctuations and Its Effect on the Stokes Shift in InGaP/InP Quantum Confined Heterostructures. Journal of Applied Physics, 84(10), 5639-5642. Lien externe
Ababou, Y., Desjardins, P., Chennouf, A., Masut, R. A., Yelon, A., Beaudoin, M., Bensaada, A., Leonelli, R., & L'Espérance, G. (1997). Optical absorption and determination of band offset in strain-balanced GaInP/InAsP multiple quantum wells grown by low-pressure metalorganic vapor phase epitaxy. Semiconductor Science and Technology, 12(5), 550-554. Lien externe
Abadou, Y., Desjardins, P., Chennouf, A., Leonelli, R., Hetheringtin, A., Yelon, A., L'Espérance, G., & Masut, R. A. (1996). Structural and optical charact. of InP grown on Si(111) by metalorganic vapor phase epitaxy using thermal cycle growth. Journal of Applied Physics, 80(9), 499-505. Lien externe
Ababou, Y., Desjardins, P., Chennouf, A., Masut, R. A., Yelon, A., Leonelli, R., & L'Espérance, G. (juin 1995). Growth of strain-balanced GaInP/InAsP MQW by LP-MOVPE [Communication écrite]. 6th European workshop on Metal-Organic Vapour Phase Epitaxy and related techniques, Gent, Belgique. Non disponible
Bentoumi, G., Yaïche, Z., Leonelli, R., Beaudry, J. N., Desjardins, P., & Masut, R. A. (2008). Low-Temperature Emission in Dilute GaAsN Alloys Grown by Metalorganic Vapor Phase Epitaxy. Journal of Applied Physics, 103(6), 063526-1-063526-5. Lien externe
Bentoumi, G., Timoshevskii, V., Madini, N., Cote, M., Leonelli, R., Beaudry, J. N., Desjardins, P., & Masut, R. A. (2004). Evidence for large configuration-induced band-gap fluctuations in GaAs₁₋ₓNₓ alloys. Physical Review. B, Condensed Matter and Materials Physics, 70(3), 35315.1-35315.5-35315.1-35315.5. Lien externe
Beaudry, J.-N., Masut, R. A., Desjardins, P., Wei, P., Chicoine, M., Bentoumi, G., Leonelli, R., Schiettekatte, F., & Guillon, S. (2004). Organometallic vapor phase epitaxy of GaAs₁₋ₓNₓ alloy layers on GaAs(001): Nitrogen incorporation and lattice parameter variation. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(3), 771-775. Lien externe
Beaudoin, M., Bensaada, A., Leonelli, R., Desjardins, P., Masut, R. A., Isnard, L., Chennouf, A., & L'Espérance, G. (1996). Self-consistent determination of the band offsets in InAsₓP₁₋ₓ/InP strained layer quantum wells and the bowing parameter of bulk InAsₓP₁₋ₓ. Physical review. B, Condensed matter, 53(4), 1990-1996. Lien externe
Beaudoin, M., Masut, R. A., Isnard, L., Desjardins, P., Bensaada, A., L'Espérance, G., & Leonelli, R. (novembre 1994). Band offsets of InAsxP₁₋x/InP strained layer quantum wells grown by LP-MOVPE using TBAs [Communication écrite]. Microcrystalline and nanocrystalline semiconductors : Symposium F of the 1994 Fall Meeting of the Materials Research Society, Boston, USA. Lien externe
Bensaada, A., Graham, J. T., Brebner, J. L., Chennouf, A., Cochrane, R. W., Leonelli, R., & Masut, R. A. (1994). Band alignment in GaₓIn₁₋ₓP/InP heterostructures. Applied Physics Letters, 64(3), 273-275. Lien externe
Bensaada, A., Chennouf, A., Cochrane, R. W., Graham, J. T., Leonelli, R., & Masut, R. A. (1994). Misfit strain, relaxation, and band-gap shift in GaₓIn₁₋ₓP/InP epitaxial layers. Journal of Applied Physics, 75(6), 3024-3029. Lien externe
Chang, Y. M., Leonelli, R., Maciejko, R., & Springthorpe, A. (2000). Promising Intracavity Mode-Locking Device: a Strained Gainas/Alinas Saturable Bragg Reflector Grown by Molecular-Beam Epitaxy. Applied Physics Letters, 76(7), 921-923. Lien externe
Chang, Y. M., Maciejko, R., Leonelli, R., & Thorpe, A. S. (1998). Self-Starting Passively Mode-Locked Tunable Cr4+: Yttrium- Aluminum-Garnet Laser With a Single Prism for Dispersion Compensation. Applied Physics Letters, 73(15), 2098-2100. Lien externe
Desjardins, P., Beaudoin, M., Leonelli, R., L'Espérance, G., & Masut, R. A. (1996). Structural and optical properties of strain-relaxed InAsP/InP heterostructures grown by metalorganic vapor phase epitaxy on InP(001) using tertiarybutylarsine. Journal of Applied Physics, 80(2), 846-852. Lien externe
Favron, A., Goudreault, F. A., Gosselin, V., Groulx, J., Cote, M., Leonelli, R., Germain, J. F., Phaneuf-L'Heureux, A. L., Francoeur, S., & Martel, R. (2018). Second-order Raman scattering in exfoliated black phosphorus. Nano Letters, 18(2), 1018-1027. Lien externe
Favron, A., Gaufres, E., Fossard, F., Phaneuf-L'Heureux, A. L., Tang, N. Y. W., Levesque, P. L., Loiseau, A., Leonelli, R., Francoeur, S., & Martel, R. (2015). Photooxidation and quantum confinement effects in exfoliated black phosphorus. Nature Materials, 14(8), 826-832. Lien externe
Frankland, D., Masut, R. A., & Leonelli, R. (2002). Growth and Characterization of InAs on (100) InP Ultrathin Single Quantum Wells Using Tertiarybutylarsine and Tertiarybutylphosphine. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 20(3), 1132-1134. Lien externe
Gelinas, G., Lanacer, A., Leonelli, R., Masut, R. A., & Poole, P. J. (2010). Carrier thermal escape in families of InAs/InP self-assembled quantum dots. Physical Review. B, Condensed Matter and Materials Physics, 81(23), 235426. Lien externe
Kabashin, A. V., Meunier, M., & Leonelli, R. (2001). Photoluminescence Characterization of Si-Based Nanostructured Films Produced by Pulsed Laser Ablation. Journal of Vacuum Science & Technology B: Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 19(6), 2217-2222. Lien externe
Kabashin, A. V., Charbonneau-Lefort, M., Meunier, M., & Leonelli, R. (mai 2000). Effects of deposition and post-fabrication conditions on photoluminescent properties of nanostructured Si/SiOₓ films prepared by laser ablation [Communication écrite]. European Materials Research Society 2000 Spring Meeting , Symposium D: Photon-induced Material Processing, Strasbourg, France. Publié dans Applied Surface Science, 168(1-4). Lien externe
Levesque, A., Desjardins, P., Leonelli, R., & Masut, R. A. (2011). Temperature dependence of the photoluminescence spectra from InAs(P)/InP multilayers containing thick quantum dots: Dot-size-dependent carrier dynamics. Physical Review. B, Condensed Matter and Materials Physics, 83(23), 235304. Lien externe
Lanacer, A., Shtinkov, N., Desjardins, P., Masut, R. A., & Leonelli, R. (2007). Optical Emission From InAs/InP Self-Assembled Quantum Dots: Evidence for As/P Intermixing. Semiconductor Science and Technology, 22(12), 1282-1286. Lien externe
Lanacer, A., Chabot, J. F., Côté, M., Leonelli, R., Frankland, D., & Masut, R. A. (2005). Raman study of optical phonons in ultrathin InAs/InP single strained quantum wells. Physical Review. B, Condensed Matter and Materials Physics, 7207(7), 075349. Lien externe
Paki, P., Leonelli, R., Isnard, L., & Masut, R. A. (2000). Excitons in Ultrathin InAs/InP Quantum Wells: Interplay Between Extended and Localized States. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 18(3), 956-959. Lien externe
Paki, P., Leonelli, R., Isnard, L., & Masut, R. A. (1999). Exciton Resonances in Ultrathin InAs/InP Quantum Wells. Applied Physics Letters, 74(10), 1445-1447. Lien externe
Paki, P., Leonelli, R., Isnard, L., & Masut, R. A. (1999). Optical Properties of Submonolayer Inas/Inp Quantum Dots on Vicinal Surfaces. Journal of Applied Physics, 86(12), 6789-6792. Lien externe
Rejeb, C., Maciejko, R., Leonelli, R., & Morris, D. (juin 2000). Optical properties of In₁₋ₓGaₓAsyP₁₋y multiple quantum well heterostructure lasers [Communication écrite]. Applications of Photonic Technology. 4th Conference, Québec, Canada. Lien externe
Turcotte, S., Beaudry, J.-N., Masut, R. A., Desjardins, P., Bentoumi, G., & Leonelli, R. (2012). Abnormal Broadening of the Optical Transitions in (Ga,As)N/GaAs Quantum Wells. Physical Review B, 85(3), 033304 (4 pages). Lien externe
Turcotte, S., Larouche, S., Beaudry, J.-N., Martinu, L., Masut, R. A., Desjardins, P., & Leonelli, R. (2009). Evidence of valence band perturbations in GaAsN/GaAs(001): Combined variable-angle spectroscopic ellipsometry and modulated photoreflectance investigation. Physical Review B, 80(8). Lien externe
Turcotte, S., Beaudry, J. N., Masut, R. A., Desjardins, P., Bentoumi, G., & Leonelli, R. (2008). Experimental Investigation of the Variation of the Absorption Coefficient With Nitrogen Content in GaasN and GaInAsN Grown on GaAs (001). Journal of Applied Physics, 104(8), 083511. Lien externe
Timoshevskii, V., Cote, M., Gilbert, G., Leonelli, R., Turcotte, S., Beaudry, J. N., Desjardins, P., Larouche, S., Martinu, L., & Masut, R. A. (2006). Experimental and Theoretical Studies of the E+ Optical Transition in GaAsN Alloys. Physical Review B, 74(16). Lien externe
Turcotte, S., Shtinkov, N., Desjardins, P., Masut, R. A., & Leonelli, R. (2004). Empirical Tight-Binding Calculations of the Electronic Structure of Dilute III-V-N Semiconductor Alloys. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(3), 776-780. Lien externe
Tran, C. A., Brebner, J. L., Leonelli, R., Jouanne, M., & Masut, R. A. (1994). E₁-gap resonant enhancement of the raman-scattering from highly strained InAs/InP short-period superlattices. Superlattices and Microstructures, 15(4), 391-397. Lien externe
Tran, C. A., Brebner, J. L., Leonelli, R., Jouanne, M., & Masut, R. A. (1994). Optical phonons in strained single InAs/InP quantum wells: A Raman study. Physical review. B, Condensed matter, 49(16), 11268-11271. Lien externe
Yongmao, C., Maciejko, R., Leonelli, R., & Springthorpe, A. (juillet 1998). Continuous-wave and self-starting passively mode-locked broadband Cr⁴⁺ :YAG laser system [Communication écrite]. ICAPT '98 : Applications of photonic technology 3 :closing the gap between theory, development, and application, Ottawa, CAN. Lien externe
