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Aït-Ouali, A., Chennouf, A., Yip, R. Y. F., Brebner, J. L., Leonelli, R., & Masut, R. A. (1998). Localization of Excitons by Potential Fluctuations and Its Effect on the Stokes Shift in InGaP/InP Quantum Confined Heterostructures. Journal of Applied Physics, 84(10), 5639-5642. External link
Ababou, Y., Desjardins, P., Chennouf, A., Masut, R. A., Yelon, A., Beaudoin, M., Bensaada, A., Leonelli, R., & L'Espérance, G. (1997). Optical absorption and determination of band offset in strain-balanced GaInP/InAsP multiple quantum wells grown by low-pressure metalorganic vapor phase epitaxy. Semiconductor Science and Technology, 12(5), 550-554. External link
Abadou, Y., Desjardins, P., Chennouf, A., Leonelli, R., Hetheringtin, A., Yelon, A., L'Espérance, G., & Masut, R. A. (1996). Structural and optical charact. of InP grown on Si(111) by metalorganic vapor phase epitaxy using thermal cycle growth. Journal of Applied Physics, 80(9), 499-505. External link
Ababou, Y., Desjardins, P., Chennouf, A., Masut, R. A., Yelon, A., Leonelli, R., & L'Espérance, G. (1995, June). Growth of strain-balanced GaInP/InAsP MQW by LP-MOVPE [Paper]. 6th European workshop on Metal-Organic Vapour Phase Epitaxy and related techniques, Gent, Belgique. Unavailable
Bentoumi, G., Yaïche, Z., Leonelli, R., Beaudry, J. N., Desjardins, P., & Masut, R. A. (2008). Low-Temperature Emission in Dilute GaAsN Alloys Grown by Metalorganic Vapor Phase Epitaxy. Journal of Applied Physics, 103(6), 063526-1-063526-5. External link
Bentoumi, G., Timoshevskii, V., Madini, N., Côté, M., Leonelli, R., Beaudry, J. N., Desjardins, P., & Masut, R. A. (2004). Evidence for large configuration-induced band-gap fluctuations in GaAs₁₋ₓNₓ alloys. Physical Review. B, Condensed Matter and Materials Physics, 70(3), 35315.1-35315.5. External link
Beaudry, J.-N., Masut, R. A., Desjardins, P., Wei, P., Chicoine, M., Bentoumi, G., Leonelli, R., Schiettekatte, F., & Guillon, S. (2004). Organometallic vapor phase epitaxy of GaAs₁₋ₓNₓ alloy layers on GaAs(001): Nitrogen incorporation and lattice parameter variation. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(3), 771-775. External link
Beaudoin, M., Bensaada, A., Leonelli, R., Desjardins, P., Masut, R. A., Isnard, L., Chennouf, A., & L'Espérance, G. (1996). Self-consistent determination of the band offsets in InAsₓP₁₋ₓ/InP strained layer quantum wells and the bowing parameter of bulk InAsₓP₁₋ₓ. Physical review. B, Condensed matter, 53(4), 1990-1996. External link
Beaudoin, M., Masut, R. A., Isnard, L., Desjardins, P., Bensaada, A., L'Espérance, G., & Leonelli, R. (1994, November). Band offsets of InAsxP₁₋x/InP strained layer quantum wells grown by LP-MOVPE using TBAs [Paper]. Microcrystalline and nanocrystalline semiconductors : Symposium F of the 1994 Fall Meeting of the Materials Research Society, Boston, USA. External link
Bensaada, A., Graham, J. T., Brebner, J. L., Chennouf, A., Cochrane, R. W., Leonelli, R., & Masut, R. A. (1994). Band alignment in GaₓIn₁₋ₓP/InP heterostructures. Applied Physics Letters, 64(3), 273-275. External link
Bensaada, A., Chennouf, A., Cochrane, R. W., Graham, J. T., Leonelli, R., & Masut, R. A. (1994). Misfit strain, relaxation, and band-gap shift in GaₓIn₁₋ₓP/InP epitaxial layers. Journal of Applied Physics, 75(6), 3024-3029. External link
Chang, Y. M., Leonelli, R., Maciejko, R., & Springthorpe, A. (2000). Promising Intracavity Mode-Locking Device: a Strained Gainas/Alinas Saturable Bragg Reflector Grown by Molecular-Beam Epitaxy. Applied Physics Letters, 76(7), 921-923. External link
Desjardins, P., Beaudoin, M., Leonelli, R., L'Espérance, G., & Masut, R. A. (1996). Structural and optical properties of strain-relaxed InAsP/InP heterostructures grown by metalorganic vapor phase epitaxy on InP(001) using tertiarybutylarsine. Journal of Applied Physics, 80(2), 846-852. External link
Favron, A., Goudreault, F. A., Gosselin, V., Groulx, J., Cote, M., Leonelli, R., Germain, J. F., Phaneuf-L'Heureux, A. L., Francoeur, S., & Martel, R. (2018). Second-order Raman scattering in exfoliated black phosphorus. Nano Letters, 18(2), 1018-1027. External link
Frankland, D., Masut, R. A., & Leonelli, R. (2002). Growth and Characterization of InAs on (100) InP Ultrathin Single Quantum Wells Using Tertiarybutylarsine and Tertiarybutylphosphine. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 20(3), 1132-1134. External link
Gelinas, G., Lanacer, A., Leonelli, R., Masut, R. A., & Poole, P. J. (2010). Carrier thermal escape in families of InAs/InP self-assembled quantum dots. Physical Review. B, Condensed Matter and Materials Physics, 81(23), 235426. External link
Kabashin, A. V., Meunier, M., & Leonelli, R. (2001). Photoluminescence Characterization of Si-Based Nanostructured Films Produced by Pulsed Laser Ablation. Journal of Vacuum Science & Technology B: Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 19(6), 2217-2222. External link
Kabashin, A. V., Charbonneau-Lefort, M., Meunier, M., & Leonelli, R. (2000, May). Effects of deposition and post-fabrication conditions on photoluminescent properties of nanostructured Si/SiOₓ films prepared by laser ablation [Paper]. European Materials Research Society 2000 Spring Meeting , Symposium D: Photon-induced Material Processing, Strasbourg, France. Published in Applied Surface Science, 168(1-4). External link
Lévesque, A., Desjardins, P., Leonelli, R., & Masut, R. A. (2011). Temperature dependence of the photoluminescence spectra from InAs(P)/InP multilayers containing thick quantum dots: Dot-size-dependent carrier dynamics. Physical Review. B, Condensed Matter and Materials Physics, 83(23), 235304. External link
Lanacer, A., Shtinkov, N., Desjardins, P., Masut, R. A., & Leonelli, R. (2007). Optical Emission From InAs/InP Self-Assembled Quantum Dots: Evidence for As/P Intermixing. Semiconductor Science and Technology, 22(12), 1282-1286. External link
Lanacer, A., Chabot, J. F., Côté, M., Leonelli, R., Frankland, D., & Masut, R. A. (2005). Raman study of optical phonons in ultrathin InAs/InP single strained quantum wells. Physical Review. B, Condensed Matter and Materials Physics, 7207(7), 075349. External link
Paki, P., Leonelli, R., Isnard, L., & Masut, R. A. (2000). Excitons in Ultrathin InAs/InP Quantum Wells: Interplay Between Extended and Localized States. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 18(3), 956-959. External link
Paki, P., Leonelli, R., Isnard, L., & Masut, R. A. (1999). Exciton Resonances in Ultrathin InAs/InP Quantum Wells. Applied Physics Letters, 74(10), 1445-1447. External link
Paki, P., Leonelli, R., Isnard, L., & Masut, R. A. (1999). Optical Properties of Submonolayer Inas/Inp Quantum Dots on Vicinal Surfaces. Journal of Applied Physics, 86(12), 6789-6792. External link
Rejeb, C., Maciejko, R., Leonelli, R., & Morris, D. (2000, June). Optical properties of In₁₋ₓGaₓAsyP₁₋y multiple quantum well heterostructure lasers [Paper]. Applications of Photonic Technology. 4th Conference, Québec, Canada. External link
Turcotte, S., Beaudry, J.-N., Masut, R. A., Desjardins, P., Bentoumi, G., & Leonelli, R. (2012). Abnormal Broadening of the Optical Transitions in (Ga,As)N/GaAs Quantum Wells. Physical Review B, 85(3), 033304 (4 pages). External link
Turcotte, S., Larouche, S., Beaudry, J.-N., Martinu, L., Masut, R. A., Desjardins, P., & Leonelli, R. (2009). Evidence of valence band perturbations in GaAsN/GaAs(001): Combined variable-angle spectroscopic ellipsometry and modulated photoreflectance investigation. Physical Review B, 80(8). External link
Timoshevskii, V., Côté, M., Gilbert, G., Leonelli, R., Turcotte, S., Beaudry, J. N., Desjardins, P., Larouche, S., Martinu, L., & Masut, R. A. (2006). Experimental and Theoretical Studies of the E+ Optical Transition in GaAsN Alloys. Physical Review B, 74(16). External link
Turcotte, S., Shtinkov, N., Desjardins, P., Masut, R. A., & Leonelli, R. (2004). Empirical Tight-Binding Calculations of the Electronic Structure of Dilute III-V-N Semiconductor Alloys. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(3), 776-780. External link
Tran, C. A., Brebner, J. L., Leonelli, R., Jouanne, M., & Masut, R. A. (1994). E₁-gap resonant enhancement of the raman-scattering from highly strained InAs/InP short-period superlattices. Superlattices and Microstructures, 15(4), 391-397. External link
Tran, C. A., Brebner, J. L., Leonelli, R., Jouanne, M., & Masut, R. A. (1994). Optical phonons in strained single InAs/InP quantum wells: A Raman study. Physical review. B, Condensed matter, 49(16), 11268-11271. External link
Yongmao, C., Maciejko, R., Leonelli, R., & Springthorpe, A. (1998, July). Continuous-wave and self-starting passively mode-locked broadband Cr⁴⁺ :YAG laser system [Paper]. ICAPT '98 : Applications of photonic technology 3 :closing the gap between theory, development, and application, Ottawa, CAN. External link
