A. Bensaada, A. Chennouf, R. W. Cochrane, J. T. Graham, R. Leonelli and Rémo A. Masut
Article (1994)
An external link is available for this item| Department: | Department of Engineering Physics |
|---|---|
| Research Center: | GCM - Thin Film Physics and Technology Research Group |
| PolyPublie URL: | https://publications.polymtl.ca/33544/ |
| Journal Title: | Journal of Applied Physics (vol. 75, no. 6) |
| Publisher: | American Institute of Physics |
| DOI: | 10.1063/1.356147 |
| Official URL: | https://doi.org/10.1063/1.356147 |
| Date Deposited: | 18 Apr 2023 15:25 |
| Last Modified: | 25 Sep 2024 16:16 |
| Cite in APA 7: | Bensaada, A., Chennouf, A., Cochrane, R. W., Graham, J. T., Leonelli, R., & Masut, R. A. (1994). Misfit strain, relaxation, and band-gap shift in GaₓIn₁₋ₓP/InP epitaxial layers. Journal of Applied Physics, 75(6), 3024-3029. https://doi.org/10.1063/1.356147 |
|---|---|
Statistics
Dimensions
