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Misfit strain, relaxation, and band-gap shift in GaₓIn₁₋ₓP/InP epitaxial layers

A. Bensaada, A. Chennouf, R. W. Cochrane, J. T. Graham, R. Leonelli and Rémo A. Masut

Article (1994)

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Department: Department of Engineering Physics
Research Center: GCM - Thin Film Physics and Technology Research Group
PolyPublie URL: https://publications.polymtl.ca/33544/
Journal Title: Journal of Applied Physics (vol. 75, no. 6)
Publisher: American Institute of Physics
DOI: 10.1063/1.356147
Official URL: https://doi.org/10.1063/1.356147
Date Deposited: 18 Apr 2023 15:25
Last Modified: 05 Apr 2024 11:24
Cite in APA 7: Bensaada, A., Chennouf, A., Cochrane, R. W., Graham, J. T., Leonelli, R., & Masut, R. A. (1994). Misfit strain, relaxation, and band-gap shift in GaₓIn₁₋ₓP/InP epitaxial layers. Journal of Applied Physics, 75(6), 3024-3029. https://doi.org/10.1063/1.356147

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