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Self-consistent determination of the band offsets in InAsₓP₁₋ₓ/InP strained layer quantum wells and the bowing parameter of bulk InAsₓP₁₋ₓ

M. Beaudoin, A. Bensaada, R. Leonelli, Patrick Desjardins, Rémo A. Masut, L. Isnard, A. Chennouf and Gilles L'Espérance

Article (1996)

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Additional Information: Nom historique du département: Département de métallurgie et de génie des matériaux
Department: Department of Engineering Physics
Research Center: GCM - Thin Film Physics and Technology Research Group
PolyPublie URL: https://publications.polymtl.ca/31528/
Journal Title: Physical review. B, Condensed matter (vol. 53, no. 4)
Publisher: American Physical Society
DOI: 10.1103/physrevb.53.1990
Official URL: https://doi.org/10.1103/physrevb.53.1990
Date Deposited: 18 Apr 2023 15:24
Last Modified: 05 Apr 2024 11:21
Cite in APA 7: Beaudoin, M., Bensaada, A., Leonelli, R., Desjardins, P., Masut, R. A., Isnard, L., Chennouf, A., & L'Espérance, G. (1996). Self-consistent determination of the band offsets in InAsₓP₁₋ₓ/InP strained layer quantum wells and the bowing parameter of bulk InAsₓP₁₋ₓ. Physical review. B, Condensed matter, 53(4), 1990-1996. https://doi.org/10.1103/physrevb.53.1990

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