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Ababou, Y., Desjardins, P., Chennouf, A., Masut, R. A., Yelon, A., Beaudoin, M., Bensaada, A., Leonelli, R., & L'Espérance, G. (1997). Optical absorption and determination of band offset in strain-balanced GaInP/InAsP multiple quantum wells grown by low-pressure metalorganic vapor phase epitaxy. Semiconductor Science and Technology, 12(5), 550-554. Lien externe
Arsenault, C. J., Meunier, M., Beaudoin, M., & Movaghar, B. (1991). Electronic transport through a-Si:H/a-SiNₓ:H single and double barrier structures. Journal of Non-Crystalline Solids, 137-138, 1111-1114. Lien externe
Arsenault, C. J., Meunier, M., Beaudoin, M., & Movaghar, B. (1991). Perpendicular transport ina-Si:H/a-SiNₓ:H single- and double-barrier structures. Physical Review B, 44(20), 11521-11524. Lien externe
Beaudoin, M., Desjardins, P., Yip, R. Y.-F., & Masut, R. A. (2000). Optical and structural properties of InAsP/In(Ga)P multilayers on InP(001): Strained-layer multiple quantum well structures and devices. Dans Manasreh, M. O. (édit.), InP and related compounds : materials, applications and devices . Lien externe
Beaudoin, M., Desjardins, P., Ait Ouali, A., Brebner, J. L., Yip, R. Y. F., Marchand, H., Isnard, L., & Masut, R. A. (2000). Optical properties and heterojunction band alignment in fully coherent strain-compensated InAsₓP₁₋ₓ /GayIn₁₋yP multilayers on InP(001). Journal of Applied Physics, 87(5), 2320-2326. Lien externe
Beaudoin, M., Bensaada, A., Leonelli, R., Desjardins, P., Masut, R. A., Isnard, L., Chennouf, A., & L'Espérance, G. (1996). Self-consistent determination of the band offsets in InAsₓP₁₋ₓ/InP strained layer quantum wells and the bowing parameter of bulk InAsₓP₁₋ₓ. Physical review. B, Condensed matter, 53(4), 1990-1996. Lien externe
Beaudoin, M., Masut, R. A., Isnard, L., Desjardins, P., Bensaada, A., L'Espérance, G., & Leonelli, R. (novembre 1994). Band offsets of InAsxP₁₋x/InP strained layer quantum wells grown by LP-MOVPE using TBAs [Communication écrite]. Microcrystalline and nanocrystalline semiconductors : Symposium F of the 1994 Fall Meeting of the Materials Research Society, Boston, USA. Lien externe
Bensaada, A., Suys, M., Beaudoin, M., Desjardins, P., Isnard, L., Masut, R. A., Cochrane, R. W., Currie, J. F., & L'Espérance, G. (juin 1995). LP-MOVPE growth and characterization of InₓGa₁₋ₓAs/InP epilayers and multiple quantum wells using tertiarybutylarsine [Communication écrite]. 6th European Workshop on Metal-Organic Vapour Phase Epitaxy and related growth techniques, Gent, Belgium. Non disponible
Beaudoin, M., Meunier, M., & Arsenault, C. J. (1993). Blueshift of the optical band gap: Implications for the quantum confinement effect ina-Si:H/a-SiNₓ:H multilayers. Physical Review B, 47(4), 2197-2202. Lien externe
Beaudoin, M., Meunier, M., Muschik, T., Schwarz, R., Arsenault, C. J., Beaulieu, M., & Grimal, O. (août 1992). Interfaces effectives et pentes d'Urbach de multicouches a-Si:H/a-SiNₓ:H [Effective interfaces and Urbach slope in a-Si:H/a-SiNₓ:H multilayers]. [Communication écrite]. 6e Conférence canadienne sur la technologie des semiconducteurs, Ottawa, Ontario. Publié dans Canadian Journal of Physics, 70(10-11). Lien externe
Beaudoin, M., Arsenault, C. J., & Meunier, M. (1991). On the blue-shift of the optical bandgap of a-Si:H/a-SiNₓ:H multilayer structures. Journal of Non-Crystalline Solids, 137-138, 1099-1102. Lien externe
Beaudoin, M., Arsenault, C. J., Izquierdo, R., & Meunier, M. (1989). Interface study of hydrogenated amorphous silicon nitride on hydrogenated amorphous silicon by X-ray photoelectron spectroscopy. Applied Physics Letters, 55(25), 2640-2640. Lien externe
Desjardins, P., Beaudoin, M., Leonelli, R., L'Espérance, G., & Masut, R. A. (1996). Structural and optical properties of strain-relaxed InAsP/InP heterostructures grown by metalorganic vapor phase epitaxy on InP(001) using tertiarybutylarsine. Journal of Applied Physics, 80(2), 846-852. Lien externe
Guillon, S., Yip, R. Y.-F., Desjardins, P., Chicoine, M., Bougrioua, Z., Beaudoin, M., Aït-Ouali, A., & Masut, R. A. (1998). Low-pressure organometallic vapor phase epitaxy of coherent InGaAsP/InP and InGaAsP/InAsP multilayers on InP(001). Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 781-785. Lien externe
Wang, F., Schwarz, R., Beaudoin, M., & Meunier, M. (1992). Electron and hole μτ-products in a-Si:H/a-SiNₓ:H multilayers. Superlattices and Microstructures, 12(4), 549-552. Lien externe
Yip, R. Y. F., Ait Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. A. (1997). Erratum: Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy. Journal of Applied Physics, 82(12), 6372-6372. Lien externe
Yip, R. Y.-F., Aït-Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. A. (1997). Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, 81(4), 1905-1915. Lien externe
Zhao, Y. G., Zou, Y. H., Huang, X. L., Wang, J. J., Qin, Y. D., Masut, R. A., & Beaudoin, M. (1998). Differential Reflection Dynamics in InAsₓP₁₋ₓ/InP (x≤0.35) Strained-Multiple-Quantum Wells. Journal of Applied Physics, 83(8), 4430-4435. Lien externe
Zhao, Y. G., Qin, Y. D., Huang, X. L., Wang, J. J., Zou, Y. H., Masut, R. A., & Beaudoin, M. (1998). Photoexcited Carrier Diffusion Dependence of Differential Reflection Dynamics in InAsₓP₁₋ₓ/InP (x≤0.35) Strained- Multiple-Quantum Wells. Solid State Communications, 105(6), 393-397. Lien externe
